Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te semiconductors

The chemical dissolution of CdTe single crystals and Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te, Cd₀.₂Hg₀.₈Te solid solutions in HNO3-HI-citric acid aqueous solutions has been investigated. The etching rate dependences of the mentioned above materials versus iodine and organic solvent content in the compositions...

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Опубліковано в: :Functional Materials
Дата:2018
Автори: Hvozdiyevskyi, Ye.Ye., Denysyuk, R.O., Tomashyk, V.M., Malanych, G.P., Tomashyk, Z.F.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2018
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/157167
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te semiconductors / Ye.Ye. Hvozdiyevskyi, R.O. Denysyuk, V.M. Tomashyk, G.P. Malanych, Z.F. Tomashyk // Functional Materials. — 2018. — Т. 25, № 3. — С. 471-476. — Бібліогр.: 11 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-157167
record_format dspace
spelling Hvozdiyevskyi, Ye.Ye.
Denysyuk, R.O.
Tomashyk, V.M.
Malanych, G.P.
Tomashyk, Z.F.
2019-06-19T16:43:42Z
2019-06-19T16:43:42Z
2018
Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te semiconductors / Ye.Ye. Hvozdiyevskyi, R.O. Denysyuk, V.M. Tomashyk, G.P. Malanych, Z.F. Tomashyk // Functional Materials. — 2018. — Т. 25, № 3. — С. 471-476. — Бібліогр.: 11 назв. — англ.
1027-5495
DOI:https://doi.org/10.15407/fm25.03.471
https://nasplib.isofts.kiev.ua/handle/123456789/157167
The chemical dissolution of CdTe single crystals and Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te, Cd₀.₂Hg₀.₈Te solid solutions in HNO3-HI-citric acid aqueous solutions has been investigated. The etching rate dependences of the mentioned above materials versus iodine and organic solvent content in the compositions of the chemical dissolution have been determined. The projections of constant etch rate surfaces (the Gibbs diagrams) have been constructed, the kinetic features of the dissolution has been shown and rate-limiting steps of the dissolution process and locate composition regions of polishing solutions have been identified. Using the experimental data, the compositions of polishing solutions and the conditions of the chemical-dynamic polishing of the CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te surfaces have been optimized.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Characterization and properties
Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te semiconductors
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te semiconductors
spellingShingle Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te semiconductors
Hvozdiyevskyi, Ye.Ye.
Denysyuk, R.O.
Tomashyk, V.M.
Malanych, G.P.
Tomashyk, Z.F.
Characterization and properties
title_short Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te semiconductors
title_full Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te semiconductors
title_fullStr Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te semiconductors
title_full_unstemmed Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te semiconductors
title_sort interaction of hno₃-hi-citric acid aqueous solutions with cdte, zn₀.₀₄cd₀.₉₆te, zn₀.₁cd₀.₉te and cd₀.₂hg₀.₈te semiconductors
author Hvozdiyevskyi, Ye.Ye.
Denysyuk, R.O.
Tomashyk, V.M.
Malanych, G.P.
Tomashyk, Z.F.
author_facet Hvozdiyevskyi, Ye.Ye.
Denysyuk, R.O.
Tomashyk, V.M.
Malanych, G.P.
Tomashyk, Z.F.
topic Characterization and properties
topic_facet Characterization and properties
publishDate 2018
language English
container_title Functional Materials
publisher НТК «Інститут монокристалів» НАН України
format Article
description The chemical dissolution of CdTe single crystals and Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te, Cd₀.₂Hg₀.₈Te solid solutions in HNO3-HI-citric acid aqueous solutions has been investigated. The etching rate dependences of the mentioned above materials versus iodine and organic solvent content in the compositions of the chemical dissolution have been determined. The projections of constant etch rate surfaces (the Gibbs diagrams) have been constructed, the kinetic features of the dissolution has been shown and rate-limiting steps of the dissolution process and locate composition regions of polishing solutions have been identified. Using the experimental data, the compositions of polishing solutions and the conditions of the chemical-dynamic polishing of the CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te surfaces have been optimized.
issn 1027-5495
url https://nasplib.isofts.kiev.ua/handle/123456789/157167
citation_txt Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te semiconductors / Ye.Ye. Hvozdiyevskyi, R.O. Denysyuk, V.M. Tomashyk, G.P. Malanych, Z.F. Tomashyk // Functional Materials. — 2018. — Т. 25, № 3. — С. 471-476. — Бібліогр.: 11 назв. — англ.
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first_indexed 2025-12-07T19:28:40Z
last_indexed 2025-12-07T19:28:40Z
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