Current transport through ohmic contacts to indiume nitride with high defect density

• Published in: Functional Materials
• Date: 2018
• Main Authors: Sai, P.O., Safriuk, N.V., Shynkarenko, V.V., Brunkov, P.N., Jmerik, V.N., Ivanov, S.V.
• Format: Article
• Language: English
• Published: НТК «Інститут монокристалів» НАН України 2018
• Subjects: Characterization and properties
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/157174
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Current transport through ohmic contacts to indiume nitride with high defect density / P.O. Sai, N.V. Safriuk, V.V. Shynkarenko, P.N. Brunkov, V.N. Jmerik, S.V. Ivanov // Functional Materials. — 2018. — Т. 25, № 3. — С. 486-489. — Бібліогр.: 6 назв. — англ.

The temperature dependences of contact resistivity are measured for Pd/Ti/Au ohmic contacts toward indium nitride (with different doping level 2.0ċ10¹⁸ and 8.3ċ10¹⁸ cm⁻³) over the wide temperature range (4.2 - 380 K). The growing curves are obtained in the entire investigated temperature range for b...