Low temperature thermal conductivity of heavily boron-doped synthetic diamond: Influence of boron-related structure defects
Thermal conductivity of single-crystal boron-doped diamonds (BDD) with ~ 2∙10¹⁹ cm⁻³ (~ 120 ppm) and 5∙10¹⁹ cm⁻³ (~ 300 ppm) boron content was studied by a steady-state method in a temperature range of 20–400. K. The obtained data were analyzed within Callaway model framework. The values of dislocat...
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| Date: | 2019 |
|---|---|
| Main Authors: | Prikhodko, D., Tarelkin, S., Bormashov, V., Golovanov, A., Kuznetsov, M., Teteruk, D., Kornilov, N., Volkov, A., Buga, A. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут надтвердих матеріалів ім. В.М. Бакуля НАН України
2019
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| Series: | Сверхтвердые материалы |
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/167288 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Low temperature thermal conductivity of heavily boron-doped synthetic diamond: Influence of boron-related structure defects / D. Prikhodko, S. Tarelkin, V. Bormashov, A. Golovanov, M. Kuznetsov, D. Teteruk, N. Kornilov, A. Volkov, A. Buga // Надтверді матеріали. — 2019. — № 1 (237). — С. 33-41. — Бібліогр.: 14 назв. — англ. |
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