Improvement of the reverse characteristics of Schottky diodes using gettering

• Published in: Технология и конструирование в электронной аппаратуре
• Date: 2019
• Main Authors: Litvinenko, V.N., Vikulin, I.М., Gorbachev, V.E.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Subjects: Технологические процессы и оборудование
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/167866
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Improvement of the reverse characteristics of Schottky diodes using gettering / V.N. Litvinenko, I.М. Vikulin, V.E. Gorbachev // Технология и конструирование в электронной аппаратуре. — 2019. — № 1-2. — С. 34-39. — Бібліогр.: 23 назв. — англ.

The paper considers the causes and mechanisms of the influence of defects and impurities on the reverse current of the Schottky diode. The influence of two getter regions, which were created by different technologies on the working side and the reverse side of the plate, on the value of the reverse...