High-pressure DC resistance of ZrO₂
The resistance and thermoelectromotive force (TEMF) of Y₂O₃-stabilized ZrO₂ have been investigated in the pressure and temperature range between 15 and 50 GPa, and 77 and 400 K, respectively. At a pressure of about 35 GPa the resistance of the sample decreases by 3-4 orders of magnitude. At a pressu...
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Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
2003
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| Cite this: | High-pressure DC resistance of ZrO₂ / A.N. Babushkin, H.D. Hochheimer, I.V. Korionov, Y.Y. Volkova, G.H. Wolf // Физика и техника высоких давлений. — 2003. — Т. 13, № 3. — С. 7-10. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860257778108465152 |
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| author | Babushkin, A.N. Hochheimer, H.D. Korionov, I.V. Volkova, Y.Y. Wolf, G.H. |
| author_facet | Babushkin, A.N. Hochheimer, H.D. Korionov, I.V. Volkova, Y.Y. Wolf, G.H. |
| citation_txt | High-pressure DC resistance of ZrO₂ / A.N. Babushkin, H.D. Hochheimer, I.V. Korionov, Y.Y. Volkova, G.H. Wolf // Физика и техника высоких давлений. — 2003. — Т. 13, № 3. — С. 7-10. — Бібліогр.: 6 назв. — англ. |
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| container_title | Физика и техника высоких давлений |
| description | The resistance and thermoelectromotive force (TEMF) of Y₂O₃-stabilized ZrO₂ have been investigated in the pressure and temperature range between 15 and 50 GPa, and 77 and 400 K, respectively. At a pressure of about 35 GPa the resistance of the sample decreases by 3-4 orders of magnitude. At a pressure of about 42 GPa the anomalies in the pressure dependence of the resistance, TEMF and of the parameters which depend on the concentration, mobility, and activation energy of the charge carriers were found.
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| first_indexed | 2025-12-07T18:51:00Z |
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Физика и техника высоких давлений 2003, том 13, № 3
7
PACS: 71.30.+h, 71.55.Ht, 72.20.i
A.N. Babushkin1, H.D. Hochheimer2, I.V. Korionov2,
Y.Y. Volkova2, G.H. Wolf3
HIGH-PRESSURE DC RESISTANCE OF ZrO2
1Department of Physics, Ural State University
Ekaterinburg, 620083, Russia
E-mail: alexey.babushkin@usu.ru
2Department of Physics, Colorado State University
Fort Collins, CO 80523, USA
3Department of Chemistry and Biochemistry, Arizona State University
Tempe, AZ 85287, USA
Received July 7, 2003
The resistance and thermoelectromotive force (TEMF) of Y2O3-stabilized ZrO2 have been
investigated in the pressure and temperature range between 15 and 50 GPa, and 77 and
400 K, respectively. At a pressure of about 35 GPa the resistance of the sample decreases
by 34 orders of magnitude. At a pressure of about 42 GPa the anomalies in the pressure
dependence of the resistance, TEMF and of the parameters which depend on the concentra-
tion, mobility, and activation energy of the charge carriers were found.
1. Introduction
Zirconia has rather interesting properties. This material is the major component
in the best-known fuel cell materials. Furthermore, it has been suggested that high-
density ZrO2 is a candidate for potentially very hard materials [1]. At high tem-
peratures, pure ZrO2 crystallizes in the cubic fluorite structure. On cooling, it un-
dergoes a displacive transformation to a related tetragonal fluorite structure and
then, via a martensitic transition, to a monoclinic baddeleyite-type structure. The
cubic and tetragonal fluorite phases, which exhibit the highest ionic conductivities,
can be stabilized at room temperature by the addition of a small amount (< 15 mol
%) of Y2O3 (or other oxides). Previous studies on the high-pressure behavior of
pure ZrO2 indicate successive transformations to two different orthorhombic
phases (ortho-I and ortho-II) [2]. Ortho-I is a distorted fluorite structure and orhto-
II is a dense PbCl2-type structure. Recent work by Ohtaka et al. [1] suggests that
the monoclinic-ortho-I and ortho-I-ortho-II phase boundaries occur at about 4 and
12 GPa, respectively, for pure ZrO2 near the room temperature. However, the latter
(reconstructive) transition is extremely sluggish and a large pressure range of me-
Физика и техника высоких давлений 2003, том 13, № 3
8
tastability is observed.
In this paper we report the results of an investigation of the electrical properties
of Y2O3-stabilized ZrO2 in the pressure range between 15 and 50 GPa and tem-
perature range between 77 and 400 K.
2. Experiment
The dc conductivity measurements were carried out in a diamond anvil cell
(DAC) with anvils of the «rounded cone-plane» (VerechaginYakovlev) type
made of synthetic carbonado-type diamonds [3], consisting of dielectric grains of
synthetic diamonds in layers of conducting materials. These anvils are good con-
ductors, permitting measurement of the resistance of samples placed between the
anvils in the DAC by using the anvils as the electrical contacts to the sample. The
resistance of the anvils in a dc setup does not exceed 10 Ohms and has a negligible
temperature dependence. Each anvil has two wires attached, but the sample is only
in contact with the anvils. Therefore we do not perform strictly four-point meas-
urements and the contact resistance is not eliminated. Before the resistance meas-
urements the voltage-current characteristic of the system is determined and the
resistance measurements are then done in the linear region at a dc voltage below
10 mV. This is important because a larger voltage can lead to a breakdown of the
sample due to the fact that it is very thin.
The determination of the pressure in the DAC is not easy, since the applied
pressure depends on the elastic properties of the compressed layer and anvils as
well as on the anvil geometry. The procedure for the determination of the pressure
reached in a DAC of the «rounded cone-plane» type has been described in [4,5].
Measurements were made on a compacted powder sample of «partially stabi-
lized» tetragonal ZrO2 containing 5 mol % Y2O3. The sample was synthesized by
the Daiichi Kigensou Company (Japan, lot # NEY-5M LO524).
3. Experimental results and discussion
In Fig. 1 the pressure dependence of the resistance of ZrO2 is displayed. At a
pressure of about 35 GPa the resistance of the sample decreases by 34 orders of
magnitude. Based on the fact that this result could be reproduced using different
samples and different DACs, we are sure that this effect is not caused by a shorten-
ing of the anvils nor by a dielectric breakdown of the sample with increasing pres-
sure.
In Fig. 2 the temperature dependence of the resistance at constant pressure is
shown. It can be seen that the temperature dependence of the resistance has re-
gions characterized by different slopes when displayed in a log1/T plot. They cor-
respond to activation processes described by
kT
E
RR aexp0 (1)
with Ea, the activation energy and R0, a parameter which depends on the mobility and
concentration of the charge carriers. The curves change with increasing pressure. At tem-
peratures above ~ 320 K the resistance increases again with increasing temperature.
Физика и техника высоких давлений 2003, том 13, № 3
9
Fig. 1. Resistance of ZrO2 in the pressure range between 25–48 GPa at ambient tempera-
ture. The errors are estimated by averaging results obtained on different samples. The arrow
indicates the pressure at which anomalies of the parameters R0 and Ea (see the text and
Figs. 3 and 4) are found
Fig. 2. Isobaric temperature dependence of the resistance of ZrO2. The arrows mark the
temperature where the resistance starts to increase again with increasing temperature. (Insert
resistance at 40 and 42 GPa at temperatures close to ambient)
In Fig. 3 the pressure dependence of Ea and R0 are shown. It is well known that
R0 is connected with the concentration and mobility of the charge carriers. A de-
creasing value of R0 is usually accompanied by an increase of the mobility and of
the concentration of the charge carriers. One can see in Fig. 2, that Ea and R0 have
anomalies near 42 GPa. At the same pressure the features in behavior of resistance
and TEMF are found (Fig. 4).
The large drop in the sample resistance may be associated with the ortho-
Iortho-II phase transformation. Although the equilibrium phase boundary in pure
Физика и техника высоких давлений 2003, том 13, № 3
10
Fig. 3. Pressure dependence of parameters Ea and R0, in Eq. 1. Right arrows on curves in-
dicate curves to correspond to R0, left arrows indicate curves to correspond to Ea
Fig. 4. Resistance and TEMF of ZrO2 in the pressure range between 40–48 GPa at ambient
temperature
ZrO2 occurs at much lower pressures (~ 12 GPa), this transition is extremely slug-
gish at room temperature and is reported to appear above 30 GPa under room tem-
perature compression [6].
Our results provide a first hint that the structural phase transition may be con-
nected with changes in the electronic spectrum, but further work is necessary to
corroborate this claim and to determine the nature of the electronic changes.
Acknowledgments
The research was made possible in part by grants RBRF No. 01-03-96494 and
CRDF No. REC-005.
1. O. Ohtaka, H. Fukui, T. Kunisada, T. Fujisava, T. Funakashi, W. Utsumi, T. Irifune, K.
Kuroda, T. Kikegawa, Phys. Rev. B63, 174108 (2001).
2. J.M. Leger, P.E. Tomaszewski, A. Atouf, A.S. Pereira, Phys. Rev. B47, 14075 (1993).
3. E.N. Yakovlev, B.W. Vinogradov, G.N. Stepanov, Yu. Timofeev, Rev. Phys. Chem. Japan
50, 243 (1980).
4. A.N. Babushkin, High Pressure Research 6, 349 (1992).
5. A.N. Babushkin, Y.A. Kandrina, O.L. Kobeleva, S.N. Schkerin, Y.Y. Volkova, in: Frontiers
of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel
Electronic Materials, H.D. Hochheimer, B. Kuchta, P.K. Dorhout, J.L. Yarger (eds.),
Kluwer Acad. Publ., DordrechtNew YorkLondon (2001), p. 131.
6. S. Desgreniers, K. Lagarec, Phys. Rev. B59, 8467 (1999).
HIGH-PRESSURE DC RESISTANCE OF ZrO2
|
| id | nasplib_isofts_kiev_ua-123456789-168002 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0868-5924 |
| language | English |
| last_indexed | 2025-12-07T18:51:00Z |
| publishDate | 2003 |
| publisher | Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України |
| record_format | dspace |
| spelling | Babushkin, A.N. Hochheimer, H.D. Korionov, I.V. Volkova, Y.Y. Wolf, G.H. 2020-04-18T19:21:51Z 2020-04-18T19:21:51Z 2003 High-pressure DC resistance of ZrO₂ / A.N. Babushkin, H.D. Hochheimer, I.V. Korionov, Y.Y. Volkova, G.H. Wolf // Физика и техника высоких давлений. — 2003. — Т. 13, № 3. — С. 7-10. — Бібліогр.: 6 назв. — англ. 0868-5924 PACS: 71.30.+h, 71.55.Ht, 72.20.-i https://nasplib.isofts.kiev.ua/handle/123456789/168002 The resistance and thermoelectromotive force (TEMF) of Y₂O₃-stabilized ZrO₂ have been investigated in the pressure and temperature range between 15 and 50 GPa, and 77 and 400 K, respectively. At a pressure of about 35 GPa the resistance of the sample decreases by 3-4 orders of magnitude. At a pressure of about 42 GPa the anomalies in the pressure dependence of the resistance, TEMF and of the parameters which depend on the concentration, mobility, and activation energy of the charge carriers were found. The research was made possible in part by grants RBRF No. 01-03-96494 and CRDF No. REC-005. en Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України Физика и техника высоких давлений High-pressure DC resistance of ZrO₂ Article published earlier |
| spellingShingle | High-pressure DC resistance of ZrO₂ Babushkin, A.N. Hochheimer, H.D. Korionov, I.V. Volkova, Y.Y. Wolf, G.H. |
| title | High-pressure DC resistance of ZrO₂ |
| title_full | High-pressure DC resistance of ZrO₂ |
| title_fullStr | High-pressure DC resistance of ZrO₂ |
| title_full_unstemmed | High-pressure DC resistance of ZrO₂ |
| title_short | High-pressure DC resistance of ZrO₂ |
| title_sort | high-pressure dc resistance of zro₂ |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/168002 |
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