About influence of energy of electrons and ions on speed of electron- and ion-stimulated plasmachemical etching of silicon
The experimental dependence of the etching rate monosilicon of self-bias voltages on the active electrode at other constant conditions in the discharge is shows. With increasing negative bias potential monosilicon etching rate increases, then reaches a maximum at Ubias ≈ - (140…160 V). Further incre...
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| Date: | 2010 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2010
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/17499 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | About influence of energy of electrons and ions on speed of electron- and ion-stimulated plasmachemical etching of silicon / O.A. Fedorovich, M.P. Kruglenko, B.P. Polozov // Вопросы атомной науки и техники. — 2010. — № 6. — С. 185-187. — Бібліогр.: 7 назв. — англ. |