High-density effects due to interaction of self-trapped exciton with (Ba, 5p) core hole in BaF₂ at low temperature

The effect of VUV undulator excitation intensity on the emission shape and decay time of BaF₂ crystal at low temperature has been observed. The findings are explained in terms of quenching of Auger-free luminescence (cross luminescence) by self-trapped exciton via Förster mechanism energy transfer....

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Published in:Физика низких температур
Date:1997
Main Authors: Terekhin, M.A., Svechnikov, N.Yu., Tanaka, S., Hirose, S., Kamada, M.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 1997
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/175116
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:High-density effects due to interaction of self-trapped exciton with (Ba, 5p) core hole in BaF₂ at low temperature / М.А. Terekhin, N.Yu. Svechnikov, S. Tanaka, S. Hirose, and М. Кamada // Физика низких температур. — 1997. — Т. 23, № 4. — С. 473-475. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:The effect of VUV undulator excitation intensity on the emission shape and decay time of BaF₂ crystal at low temperature has been observed. The findings are explained in terms of quenching of Auger-free luminescence (cross luminescence) by self-trapped exciton via Förster mechanism energy transfer.
ISSN:0132-6414