High-density effects due to interaction of self-trapped exciton with (Ba, 5p) core hole in BaF₂ at low temperature

• Published in: Физика низких температур
• Date: 1997
• Main Authors: Terekhin, M.A., Svechnikov, N.Yu., Tanaka, S., Hirose, S., Kamada, M.
• Format: Article
• Language: English
• Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 1997
• Subjects: Письма редактору
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/175116
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: High-density effects due to interaction of self-trapped exciton with (Ba, 5p) core hole in BaF₂ at low temperature / М.А. Terekhin, N.Yu. Svechnikov, S. Tanaka, S. Hirose, and М. Кamada // Физика низких температур. — 1997. — Т. 23, № 4. — С. 473-475. — Бібліогр.: 12 назв. — англ.

The effect of VUV undulator excitation intensity on the emission shape and decay time of BaF₂ crystal at low temperature has been observed. The findings are explained in terms of quenching of Auger-free luminescence (cross luminescence) by self-trapped exciton via Förster mechanism energy transfer....