Dissipation effects in superconducting heterostructures with tungsten nanorods as weak links

• Опубліковано в: Физика низких температур
• Дата: 2018
• ISSN: 0132-6414
• Автори: Shaternik, V.E., Shapovalov, A.P., Suvorov, O.Yu., Zhitlukhina, E.S., Belogolovskii, M.A., Febvre, P., Kordyuk, A.A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2018
• Теми: Сверхпроводимость и низкотемпературная микроэлектроника
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/175980
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Dissipation effects in superconducting heterostructures with tungsten nanorods as weak links / V.E. Shaternik, A.P. Shapovalov, O.Yu. Suvorov, E.S. Zhitlukhina, M.A. Belogolovskii, P. Febvre, A.A. Kordyuk // Физика низких температур. — 2018. — Т. 44, № 3. — С. 332-337. — Бібліогр.: 25 назв. — англ.

Thin-film hybrid heterostructures formed by superconducting molybdenum-rhenium-alloy films with a critical temperature of about 9 K and nanoscale silicon-based semiconducting interlayers with metallic tungsten nanorods have been fabricated and studied. Current-voltage characteristics of the junctions were measured at 4.2 K and under influence of 11 GHz microwave irradiation. The evidence of a quasi-one-dimensional transport through the tungsten weak links disrupted by phase-slip centers was revealed in MoRe/doped Si/MoRe trilayers under irradiation by a high-frequency field. Also, measured current-voltage characteristics of five-layer MoRe/doped Si/MoRe/doped Si/MoRe devices exhibit a strong influence of a dissipation state in the MoRe interlayer. Namely, the switching from a superconducting state with low dissipation to a finite-conductance regime can be initiated by the emergence of an extra phase-slip center in the MoRe interlayer. Possible physical mechanisms of the two findings are discussed.