Localized hole states in La₂СиО₄₊δ

Bound hole states induced by excess oxygen in La₂СиО₄₊δ are studied in the framework of the extended Hubbard model with the use of the spin-wave approximation. It is shown that the bound states are subdivided into two groups connected with different perturbations introduced by the excess oxygen in a...

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Published in:Физика низких температур
Date:1996
Main Authors: Rubin, P., Sherman, A.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 1996
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/176132
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Localized hole states in La₂CuO₄₊δ / P. Rubin, A. Sherman // Физика низких температур. — 1996. — Т. 22, № 5. — С. 543-546. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-176132
record_format dspace
spelling Rubin, P.
Sherman, A.
2021-02-03T18:19:45Z
2021-02-03T18:19:45Z
1996
Localized hole states in La₂CuO₄₊δ / P. Rubin, A. Sherman // Физика низких температур. — 1996. — Т. 22, № 5. — С. 543-546. — Бібліогр.: 9 назв. — англ.
0132-6414
https://nasplib.isofts.kiev.ua/handle/123456789/176132
Bound hole states induced by excess oxygen in La₂СиО₄₊δ are studied in the framework of the extended Hubbard model with the use of the spin-wave approximation. It is shown that the bound states are subdivided into two groups connected with different perturbations introduced by the excess oxygen in an antiferromagnetically ordered crystal. We interpret the two-band structure of the impurity reflectivity spectrum as a manifestation of these two groups of bound states. Calculated binding energies are in agreement with experiment.
This work was supported by the Estonian Science Foundation under Grants ETF-67 and ETF-349.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
Специальный выпуск Международная конференция "Сверхпроводимость. Физические аспекты"
Localized hole states in La₂СиО₄₊δ
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Localized hole states in La₂СиО₄₊δ
spellingShingle Localized hole states in La₂СиО₄₊δ
Rubin, P.
Sherman, A.
Специальный выпуск Международная конференция "Сверхпроводимость. Физические аспекты"
title_short Localized hole states in La₂СиО₄₊δ
title_full Localized hole states in La₂СиО₄₊δ
title_fullStr Localized hole states in La₂СиО₄₊δ
title_full_unstemmed Localized hole states in La₂СиО₄₊δ
title_sort localized hole states in la₂сио₄₊δ
author Rubin, P.
Sherman, A.
author_facet Rubin, P.
Sherman, A.
topic Специальный выпуск Международная конференция "Сверхпроводимость. Физические аспекты"
topic_facet Специальный выпуск Международная конференция "Сверхпроводимость. Физические аспекты"
publishDate 1996
language English
container_title Физика низких температур
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
format Article
description Bound hole states induced by excess oxygen in La₂СиО₄₊δ are studied in the framework of the extended Hubbard model with the use of the spin-wave approximation. It is shown that the bound states are subdivided into two groups connected with different perturbations introduced by the excess oxygen in an antiferromagnetically ordered crystal. We interpret the two-band structure of the impurity reflectivity spectrum as a manifestation of these two groups of bound states. Calculated binding energies are in agreement with experiment.
issn 0132-6414
url https://nasplib.isofts.kiev.ua/handle/123456789/176132
citation_txt Localized hole states in La₂CuO₄₊δ / P. Rubin, A. Sherman // Физика низких температур. — 1996. — Т. 22, № 5. — С. 543-546. — Бібліогр.: 9 назв. — англ.
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last_indexed 2025-12-07T19:32:36Z
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