The overheating effects in germanium quantum well with two subbands occupied

• Published in: Физика низких температур
• Date: 2018
• Main Authors: Berkutov, I.B., Andrievskii, V.V., Kolesnichenko, Yu.A., Komnik, Yu.F., Mironov, O.A.
• Format: Article
• Language: English
• Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2018
• Subjects: Электронные свойства проводящих систем
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/176210
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: The overheating effects in germanium quantum well with two subbands occupied / I.B. Berkutov, V.V. Andrievskii, Yu.A. Kolesnichenko, Yu.F. Komnik, O.A. Mironov // Физика низких температур. — 2018. — Т. 44, № 8. — С. 1018-1024. — Бібліогр.: 15 назв. — англ.

The charge carrier overheating effect was studied in the p-type Si₀.₄Ge₀.₆/Ge/Si₀.₄Ge₀.₆ heterostructure with two subband occupy. The temperature dependences of hole-phonon relaxation time τh-ph at weak magnetic fields demonstrated transition of the 2D system from regime of “partial inelasticity” ch...