Mapping of 2D contact perturbations by electrons on a helium film

A promising way to investigate 2D contact phenomena is proposed. This method is based on the idea
 ot depositing surface state electrons (SSE) on a thin layer of liquid helium covering the surface of a solid
 sample containing a 2D charge carrier system. The density of SSE adjusts to...

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Збережено в:
Бібліографічні деталі
Опубліковано в: :Физика низких температур
Дата:1998
Автори: Teske, E., Wyder, P., Leiderer, P., Shikin, V.
Формат: Стаття
Мова:Англійська
Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 1998
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/176402
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Mapping of 2D contact perturbations by electrons on a helium film / E. Teske, P. Wyder, P. Leiderer, V. Shikin // Физика низких температур. — 1998. — Т. 24, № 2. — С. 163-165. — Бібліогр.: 9 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:A promising way to investigate 2D contact phenomena is proposed. This method is based on the idea
 ot depositing surface state electrons (SSE) on a thin layer of liquid helium covering the surface of a solid
 sample containing a 2D charge carrier system. The density of SSE adjusts to screen contact-induced
 perturbations ot the electrostatic potential across the sample. As a result, the helium layer thickness
 varies due to the variation of the electrostatic pressure thus providing a map This map may be read off
 interferometrically by a technique already employed tor the investigation ot multi-electron dimples on
 helium. We have realized this mapping for a structured electrode as a test sample to demonstrate the
 resolution of the method.
ISSN:0132-6414