Mapping of 2D contact perturbations by electrons on a helium film
A promising way to investigate 2D contact phenomena is proposed. This method is based on the idea
 ot depositing surface state electrons (SSE) on a thin layer of liquid helium covering the surface of a solid
 sample containing a 2D charge carrier system. The density of SSE adjusts to...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 1998 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
1998
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/176402 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Mapping of 2D contact perturbations by electrons on a helium film / E. Teske, P. Wyder, P. Leiderer, V. Shikin // Физика низких температур. — 1998. — Т. 24, № 2. — С. 163-165. — Бібліогр.: 9 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | A promising way to investigate 2D contact phenomena is proposed. This method is based on the idea
ot depositing surface state electrons (SSE) on a thin layer of liquid helium covering the surface of a solid
sample containing a 2D charge carrier system. The density of SSE adjusts to screen contact-induced
perturbations ot the electrostatic potential across the sample. As a result, the helium layer thickness
varies due to the variation of the electrostatic pressure thus providing a map This map may be read off
interferometrically by a technique already employed tor the investigation ot multi-electron dimples on
helium. We have realized this mapping for a structured electrode as a test sample to demonstrate the
resolution of the method.
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| ISSN: | 0132-6414 |