Effect of an ac electric field on weak electron localization in Bi films

We have studied the effects of weak localization and electron-electron interaction in the conductivity of Bi films at temperatures between 1.1 and 4.2 К in the presence of a high-frequency electric field ( - 9.4 GHz). The experiments were carried out under conditions of no appreciable overheating of...

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Опубліковано в: :Физика низких температур
Дата:1996
Автори: Belevtsev, B.I., Hasse, J., Anopchenko, A.S., Beliayev, E.Yu.
Формат: Стаття
Мова:English
Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 1996
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/176528
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Effect of an ac electric field on weak electron localization in Bi films / B.I. Belevtsev, J. Hasse, A.S. Anopchenko, E.Yu.Beliayev // Физика низких температур. — 1996. — Т. 22, № 1. — С. 79-85. — Бібліогр.: 16 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-176528
record_format dspace
spelling Belevtsev, B.I.
Hasse, J.
Anopchenko, A.S.
Beliayev, E.Yu.
2021-02-04T20:54:59Z
2021-02-04T20:54:59Z
1996
Effect of an ac electric field on weak electron localization in Bi films / B.I. Belevtsev, J. Hasse, A.S. Anopchenko, E.Yu.Beliayev // Физика низких температур. — 1996. — Т. 22, № 1. — С. 79-85. — Бібліогр.: 16 назв. — англ.
0132-6414
https://nasplib.isofts.kiev.ua/handle/123456789/176528
539.292
We have studied the effects of weak localization and electron-electron interaction in the conductivity of Bi films at temperatures between 1.1 and 4.2 К in the presence of a high-frequency electric field ( - 9.4 GHz). The experiments were carried out under conditions of no appreciable overheating of electrons due to a microwave radiation. The data obtained permit us to examine the influence of temperature on quantum corrections Δδ(Ω) at high-frequency electric field more comprehensively and reliably than in earlier works. The experimental dependences Δδ(Ω, T) are found to be in good agreement with the known theoretical models.
We acknowledge gratefully the experimental assistance by E. Scheer. We thank H. v. Lohneysen and the Sonderforschungsbereich 196 for support, and V. A. Shklovskij for helpful discussion and for providing us with his theoretical results prior to publication.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
По всем тематикам журнала
Effect of an ac electric field on weak electron localization in Bi films
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Effect of an ac electric field on weak electron localization in Bi films
spellingShingle Effect of an ac electric field on weak electron localization in Bi films
Belevtsev, B.I.
Hasse, J.
Anopchenko, A.S.
Beliayev, E.Yu.
По всем тематикам журнала
title_short Effect of an ac electric field on weak electron localization in Bi films
title_full Effect of an ac electric field on weak electron localization in Bi films
title_fullStr Effect of an ac electric field on weak electron localization in Bi films
title_full_unstemmed Effect of an ac electric field on weak electron localization in Bi films
title_sort effect of an ac electric field on weak electron localization in bi films
author Belevtsev, B.I.
Hasse, J.
Anopchenko, A.S.
Beliayev, E.Yu.
author_facet Belevtsev, B.I.
Hasse, J.
Anopchenko, A.S.
Beliayev, E.Yu.
topic По всем тематикам журнала
topic_facet По всем тематикам журнала
publishDate 1996
language English
container_title Физика низких температур
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
format Article
description We have studied the effects of weak localization and electron-electron interaction in the conductivity of Bi films at temperatures between 1.1 and 4.2 К in the presence of a high-frequency electric field ( - 9.4 GHz). The experiments were carried out under conditions of no appreciable overheating of electrons due to a microwave radiation. The data obtained permit us to examine the influence of temperature on quantum corrections Δδ(Ω) at high-frequency electric field more comprehensively and reliably than in earlier works. The experimental dependences Δδ(Ω, T) are found to be in good agreement with the known theoretical models.
issn 0132-6414
url https://nasplib.isofts.kiev.ua/handle/123456789/176528
fulltext
citation_txt Effect of an ac electric field on weak electron localization in Bi films / B.I. Belevtsev, J. Hasse, A.S. Anopchenko, E.Yu.Beliayev // Физика низких температур. — 1996. — Т. 22, № 1. — С. 79-85. — Бібліогр.: 16 назв. — англ.
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AT hassej effectofanacelectricfieldonweakelectronlocalizationinbifilms
AT anopchenkoas effectofanacelectricfieldonweakelectronlocalizationinbifilms
AT beliayeveyu effectofanacelectricfieldonweakelectronlocalizationinbifilms
first_indexed 2025-11-25T21:29:34Z
last_indexed 2025-11-25T21:29:34Z
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