Effect of an ac electric field on weak electron localization in Bi films
We have studied the effects of weak localization and electron-electron interaction in the conductivity of Bi films at temperatures between 1.1 and 4.2 К in the presence of a high-frequency electric field ( - 9.4 GHz). The experiments were carried out under conditions of no appreciable overheating of...
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| Опубліковано в: : | Физика низких температур |
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| Дата: | 1996 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
1996
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/176528 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of an ac electric field on weak electron localization in Bi films / B.I. Belevtsev, J. Hasse, A.S. Anopchenko, E.Yu.Beliayev // Физика низких температур. — 1996. — Т. 22, № 1. — С. 79-85. — Бібліогр.: 16 назв. — англ. |
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Belevtsev, B.I. Hasse, J. Anopchenko, A.S. Beliayev, E.Yu. 2021-02-04T20:54:59Z 2021-02-04T20:54:59Z 1996 Effect of an ac electric field on weak electron localization in Bi films / B.I. Belevtsev, J. Hasse, A.S. Anopchenko, E.Yu.Beliayev // Физика низких температур. — 1996. — Т. 22, № 1. — С. 79-85. — Бібліогр.: 16 назв. — англ. 0132-6414 https://nasplib.isofts.kiev.ua/handle/123456789/176528 539.292 We have studied the effects of weak localization and electron-electron interaction in the conductivity of Bi films at temperatures between 1.1 and 4.2 К in the presence of a high-frequency electric field ( - 9.4 GHz). The experiments were carried out under conditions of no appreciable overheating of electrons due to a microwave radiation. The data obtained permit us to examine the influence of temperature on quantum corrections Δδ(Ω) at high-frequency electric field more comprehensively and reliably than in earlier works. The experimental dependences Δδ(Ω, T) are found to be in good agreement with the known theoretical models. We acknowledge gratefully the experimental assistance by E. Scheer. We thank H. v. Lohneysen and the Sonderforschungsbereich 196 for support, and V. A. Shklovskij for helpful discussion and for providing us with his theoretical results prior to publication. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур По всем тематикам журнала Effect of an ac electric field on weak electron localization in Bi films Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Effect of an ac electric field on weak electron localization in Bi films |
| spellingShingle |
Effect of an ac electric field on weak electron localization in Bi films Belevtsev, B.I. Hasse, J. Anopchenko, A.S. Beliayev, E.Yu. По всем тематикам журнала |
| title_short |
Effect of an ac electric field on weak electron localization in Bi films |
| title_full |
Effect of an ac electric field on weak electron localization in Bi films |
| title_fullStr |
Effect of an ac electric field on weak electron localization in Bi films |
| title_full_unstemmed |
Effect of an ac electric field on weak electron localization in Bi films |
| title_sort |
effect of an ac electric field on weak electron localization in bi films |
| author |
Belevtsev, B.I. Hasse, J. Anopchenko, A.S. Beliayev, E.Yu. |
| author_facet |
Belevtsev, B.I. Hasse, J. Anopchenko, A.S. Beliayev, E.Yu. |
| topic |
По всем тематикам журнала |
| topic_facet |
По всем тематикам журнала |
| publishDate |
1996 |
| language |
English |
| container_title |
Физика низких температур |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| format |
Article |
| description |
We have studied the effects of weak localization and electron-electron interaction in the conductivity of Bi films at temperatures between 1.1 and 4.2 К in the presence of a high-frequency electric field ( - 9.4 GHz). The experiments were carried out under conditions of no appreciable overheating of electrons due to a microwave radiation. The data obtained permit us to examine the influence of temperature on quantum corrections Δδ(Ω) at high-frequency electric field more comprehensively and reliably than in earlier works. The experimental dependences Δδ(Ω, T) are found to be in good agreement with the known theoretical models.
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| issn |
0132-6414 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/176528 |
| fulltext |
|
| citation_txt |
Effect of an ac electric field on weak electron localization in Bi films / B.I. Belevtsev, J. Hasse, A.S. Anopchenko, E.Yu.Beliayev // Физика низких температур. — 1996. — Т. 22, № 1. — С. 79-85. — Бібліогр.: 16 назв. — англ. |
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2025-11-25T21:29:34Z |
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2025-11-25T21:29:34Z |
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