Effect of an ac electric field on weak electron localization in Bi films

We have studied the effects of weak localization and electron-electron interaction in the conductivity of Bi films at temperatures between 1.1 and 4.2 К in the presence of a high-frequency electric field ( - 9.4 GHz). The experiments were carried out under conditions of no appreciable overheating of...

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Datum:1996
Hauptverfasser: Belevtsev, B.I., Hasse, J., Anopchenko, A.S., Beliayev, E.Yu.
Format: Artikel
Sprache:English
Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 1996
Schriftenreihe:Физика низких температур
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/176528
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Zitieren:Effect of an ac electric field on weak electron localization in Bi films / B.I. Belevtsev, J. Hasse, A.S. Anopchenko, E.Yu.Beliayev // Физика низких температур. — 1996. — Т. 22, № 1. — С. 79-85. — Бібліогр.: 16 назв. — англ.

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spelling nasplib_isofts_kiev_ua-123456789-1765282025-02-09T11:25:28Z Effect of an ac electric field on weak electron localization in Bi films Belevtsev, B.I. Hasse, J. Anopchenko, A.S. Beliayev, E.Yu. По всем тематикам журнала We have studied the effects of weak localization and electron-electron interaction in the conductivity of Bi films at temperatures between 1.1 and 4.2 К in the presence of a high-frequency electric field ( - 9.4 GHz). The experiments were carried out under conditions of no appreciable overheating of electrons due to a microwave radiation. The data obtained permit us to examine the influence of temperature on quantum corrections Δδ(Ω) at high-frequency electric field more comprehensively and reliably than in earlier works. The experimental dependences Δδ(Ω, T) are found to be in good agreement with the known theoretical models. We acknowledge gratefully the experimental assistance by E. Scheer. We thank H. v. Lohneysen and the Sonderforschungsbereich 196 for support, and V. A. Shklovskij for helpful discussion and for providing us with his theoretical results prior to publication. 1996 Article Effect of an ac electric field on weak electron localization in Bi films / B.I. Belevtsev, J. Hasse, A.S. Anopchenko, E.Yu.Beliayev // Физика низких температур. — 1996. — Т. 22, № 1. — С. 79-85. — Бібліогр.: 16 назв. — англ. 0132-6414 https://nasplib.isofts.kiev.ua/handle/123456789/176528 539.292 en Физика низких температур application/pdf Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic По всем тематикам журнала
По всем тематикам журнала
spellingShingle По всем тематикам журнала
По всем тематикам журнала
Belevtsev, B.I.
Hasse, J.
Anopchenko, A.S.
Beliayev, E.Yu.
Effect of an ac electric field on weak electron localization in Bi films
Физика низких температур
description We have studied the effects of weak localization and electron-electron interaction in the conductivity of Bi films at temperatures between 1.1 and 4.2 К in the presence of a high-frequency electric field ( - 9.4 GHz). The experiments were carried out under conditions of no appreciable overheating of electrons due to a microwave radiation. The data obtained permit us to examine the influence of temperature on quantum corrections Δδ(Ω) at high-frequency electric field more comprehensively and reliably than in earlier works. The experimental dependences Δδ(Ω, T) are found to be in good agreement with the known theoretical models.
format Article
author Belevtsev, B.I.
Hasse, J.
Anopchenko, A.S.
Beliayev, E.Yu.
author_facet Belevtsev, B.I.
Hasse, J.
Anopchenko, A.S.
Beliayev, E.Yu.
author_sort Belevtsev, B.I.
title Effect of an ac electric field on weak electron localization in Bi films
title_short Effect of an ac electric field on weak electron localization in Bi films
title_full Effect of an ac electric field on weak electron localization in Bi films
title_fullStr Effect of an ac electric field on weak electron localization in Bi films
title_full_unstemmed Effect of an ac electric field on weak electron localization in Bi films
title_sort effect of an ac electric field on weak electron localization in bi films
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
publishDate 1996
topic_facet По всем тематикам журнала
url https://nasplib.isofts.kiev.ua/handle/123456789/176528
citation_txt Effect of an ac electric field on weak electron localization in Bi films / B.I. Belevtsev, J. Hasse, A.S. Anopchenko, E.Yu.Beliayev // Физика низких температур. — 1996. — Т. 22, № 1. — С. 79-85. — Бібліогр.: 16 назв. — англ.
series Физика низких температур
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first_indexed 2025-11-25T21:29:34Z
last_indexed 2025-11-25T21:29:34Z
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