Evolution of a dislocation structure during the growth silicon single crystals of n– and p–type
The kinetics of the formation of perfect n– and p–type silicon single crystals is considered. The peculiarity of the formation of point and linear defects in the process of a controlled phase transformation of a liquid–solid is established. The effect of supersaturation by vacancies of the direction...
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| Published in: | Вопросы атомной науки и техники |
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| Date: | 2020 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2020
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/194344 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Evolution of a dislocation structure during the growth silicon single crystals of n– and p–type / N.A. Azarenkov, V.E. Semenenko, N.G. Stervoyedov // Problems of atomic science and tecnology. — 2020. — № 1. — С. 44-50. — Бібліогр.: 19 назв. — англ. |