Buchumschlag

Modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 keV to 10MeV

The main advantages of using silicon semiconductor detectors in dosimetry in comparison with traditional detectors are considered. The shortcomings are analyzed and possible methods for their elimination are proposed. One of the proposed methods makes it possible to increase the efficiency of detect...

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Bibliographische Detailangaben
Veröffentlicht in:Вопросы атомной науки и техники
Datum:2020
ISSN:1562-6016
Hauptverfasser: Dubina, V.N., Maslov, N.I., Shlyahov, I.N.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2020
Schlagworte:
Computing and modelling systems
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/194575
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 keV to 10MeV / V.N. Dubina, N.I. Maslov, I.N. Shlyahov // Problems of atomic science and tecnology. — 2020. — № 5. — С. 105-110. — Бібліогр.: 9 назв. — англ.

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