Modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 keV to 10MeV

• Published in: Вопросы атомной науки и техники
• Date: 2020
• Main Authors: Dubina, V.N., Maslov, N.I., Shlyahov, I.N.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2020
• Subjects: Computing and modelling systems
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/194575
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 keV to 10MeV / V.N. Dubina, N.I. Maslov, I.N. Shlyahov // Problems of atomic science and tecnology. — 2020. — № 5. — С. 105-110. — Бібліогр.: 9 назв. — англ.

The main advantages of using silicon semiconductor detectors in dosimetry in comparison with traditional detectors are considered. The shortcomings are analyzed and possible methods for their elimination are proposed. One of the proposed methods makes it possible to increase the efficiency of detect...