Hydrogen reduction of silicon tetrachloride in low temperature non-equilibrium plasma of induction RF discharge

• Veröffentlicht in: Вопросы атомной науки и техники
• Datum: 2019
• Hauptverfasser: Deryzemlia, A.N., Yevsiukov, A.I., Radchenko, V.I., Khizhnyak, D.A., Kryshtal, P.G., Zhuravlov, A.Yu., Shijan, A.V., Strigunovskiy, S.V., Pelypets, Yu.A., Shirokov, B.M.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2019
• Schlagworte: Low temperature plasma and plasma technologies
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/194836
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Hydrogen reduction of silicon tetrachloride in low temperature non-equilibrium plasma of induction RF discharge / A.N. Deryzemlia, A.I. Yevsiukov, V.I. Radchenko, D.A. Khizhnyak, P.G. Kryshtal, A.Yu. Zhuravlov, A.V. Shijan, S.V. Strigunovskiy, Yu.A. Pelypets, B.M. Shirokov // Problems of atomic science and technology. — 2019. — № 1. — С. 222-224. — Бібліогр.: 3 назв. — англ.

In this work, silicon is obtained by plasma-chemical reduction of silicon tetrachloride in an argon-hydrogen low- temperature nonequilibrium plasma. It is shown that in the investigated range of process parameters, the energy cost of producing one kilogram of silicon is in the range of 150…190 kW/h...