Investigation of interaction between ion-beam plasma and processed surface during the synthesis of tantalum diboride and pentaoxide
The paper is devoted to investigation of spatial distributions of ion current density to a sample in technological set-up with magnetron sputtering system and ICP source. The dependence of the ion flux towards the processed surface on the parameters of the deposition process was measured. The follow...
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| Published in: | Вопросы атомной науки и техники |
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| Date: | 2019 |
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2019
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| Cite this: | Investigation of interaction between ion-beam plasma and processed surface during the synthesis of tantalum diboride and pentaoxide / S. Yakovin, A. Zykov, S. Dudin, A. Dakhov, N. Yefymenko // Problems of atomic science and technology. — 2019. — № 1. — С. 229-232. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1859787939931750400 |
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| author | Yakovin, S. Zykov, A. Dudin, S. Dakhov, A. Yefymenko, N. |
| author_facet | Yakovin, S. Zykov, A. Dudin, S. Dakhov, A. Yefymenko, N. |
| citation_txt | Investigation of interaction between ion-beam plasma and processed surface during the synthesis of tantalum diboride and pentaoxide / S. Yakovin, A. Zykov, S. Dudin, A. Dakhov, N. Yefymenko // Problems of atomic science and technology. — 2019. — № 1. — С. 229-232. — Бібліогр.: 10 назв. — англ. |
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| container_title | Вопросы атомной науки и техники |
| description | The paper is devoted to investigation of spatial distributions of ion current density to a sample in technological set-up with magnetron sputtering system and ICP source. The dependence of the ion flux towards the processed surface on the parameters of the deposition process was measured. The following parameters were varied: magnetron discharge power, gas type and pressure, target-sample distance, inductive discharge power, and bias potential applied to the samples. The effect of nonequilibrium heating of the sample surface due to relaxation of kinetic energy of ions, atoms and electrons, as well as energy of exothermic chemical reactions at synthesis of Ta₂O₅ and TaB₂ films is discussed. The influence of sample shape on the ion bombardment is also investigated.
Досліджено просторові розподіли щільності іонного струму на зразок у технологічній установці з магнетроном та індукційним джерелом плазми. Виміряно залежності потоку іонів на оброблювану поверхню від параметрів процесу осадження, таких як: потужність магнетрона і індуктивного розряду, тип і тиск газу, потужність, потенціал зсуву на зразок. Обговорюється вплив нерівноважного нагріву поверхні зразка за рахунок релаксації кінетичної енергії іонів, атомів і електронів, а також енергії екзотермічних хімічних реакцій при синтезі плівок Ta₂O₅ і TaB₂. Досліджено вплив форми зразка на іонне бомбардування.
Исследованы пространственные распределения плотности ионного тока на образец в технологической установке с магнетроном и индукционным источником плазмы. Измерены зависимости потока ионов на обрабатываемую поверхность от параметров процесса осаждения, таких как: мощность разряда магнетрона и индуктивного разряда, тип и давление газа, мощность, потенциал смещения, подаваемый на образец. Обсуждаются влияние неравновесного нагрева поверхности образца за счет релаксации кинетической энергии ионов, атомов и электронов, а также энергии экзотермических химических реакций при синтезе пленок Ta₂O₅ и TaB₂. Исследовано влияние формы образца на ионную бомбардировку.
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| first_indexed | 2025-12-02T11:08:50Z |
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ISSN 1562-6016. ВАНТ. 2019. №1(119)
PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY. 2019, № 1. Series: Plasma Physics (25), p. 229-232. 229
INVESTIGATION OF INTERACTION BETWEEN ION-BEAM PLASMA
AND PROCESSED SURFACE DURING THE SYNTHESIS OF
TANTALUM DIBORIDE AND PENTAOXIDE
S. Yakovin, A. Zykov, S. Dudin, A. Dakhov, N. Yefymenko
V.N. Karazin Kharkiv National Universty, Kharkiv, Ukraine
E-mail: stanislav.yakovin@karazin.ua
The paper is devoted to investigation of spatial distributions of ion current density to a sample in technological
set-up with magnetron sputtering system and ICP source. The dependence of the ion flux towards the processed sur-
face on the parameters of the deposition process was measured. The following parameters were varied: magnetron
discharge power, gas type and pressure, target-sample distance, inductive discharge power, and bias potential ap-
plied to the samples. The effect of nonequilibrium heating of the sample surface due to relaxation of kinetic energy
of ions, atoms and electrons, as well as energy of exothermic chemical reactions at synthesis of Ta2O5 and TaB2
films is discussed. The influence of sample shape on the ion bombardment is also investigated.
PACS: 52.77.-j, 81.15.-z
INTRODUCTION
Last years low-pressure magnetron sputtering with
ion-beam or plasma assistance is actively investigated
for application in technologies of thin-film coatings
deposition [1-5]. The flow of high energy ions allows
cavities elimination in the growing film, creation of
additional activation centers, stimulation of surface
chemical reactions. In the last decade, magnetron sput-
tering systems have become one of the main methods
for deposition of nanocomposite functional coatings,
while the additional ion bombardment of the substrate is
carried out by variety of methods and allows control of
internal stresses, microstructure and macro properties of
deposited films. For example, it was shown in [2] that
the argon ions bombardment during tantalum pentoxide
coating deposition process reduces the adhesive and
proliferative potential of bone marrow cells. Ion bom-
bardment can be used for the structure control of depos-
ited coatings. The evolution of XRD pattern of TaB2
coating deposited by magnetron sputtering with differ-
ent sample bias shown in [5] exhibits significant impact
of ion bombardment on the coating crystallinity.
Thus, the ion bombardment of the growing film is of
crucial importance for the properties of deposited coat-
ings. Usually, its efficiency is defined by the two fac-
tors: ion energy and current density. The ion energy for
conductive substrates and coatings is usually controlled
by a negative bias applied to the substrate, that provides
possibility to control easily the energy in wide range. In
contrast, the ion flow density is frequently defined by
plasma surrounding the sample and can not be con-
trolled independently from deposition source parame-
ters.
One of the most widely used plasma sources is the In-
ductively Coupled Plasma (ICP) source. In the case of
simultaneous operation of the source and magnetron
discharge an interaction between the ICP, the magnetron
plasma and the processed surface can play an important
role, but it is not studied.
The present paper is devoted to investigation of spatial
distributions of ion current density to a sample in tech-
nological set-up with magnetron sputtering system and
ICP source. The paper presents the studies results of a
nonequilibrium plasma parameters in the multipurpose
cluster setup [6, 7] comprising a DC magnetron, an ICP
source [6, 8], and a medium-energy ion source [9, 10].
The equipment allows independent control of the flows
of metal atoms, of reactive particles, and of ions of rare
and reactive gas.
The dependence of the ion flux towards the processed
surface on the parameters of the deposition process was
measured. The process parameters which were varied
are the following: magnetron discharge power, gas type
and pressure, target-sample distance, inductive dis-
charge power, and bias potential applied to the samples.
The influence of sample shape on the ion bombardment
is also investigated. The obtained results are useful for
investigation of effect of nonequilibrium heating of the
sample surface due to relaxation of kinetic energy of
ions, atoms and electrons, as well as energy of exother-
mic chemical reactions at synthesis of Ta2O5 and TaB2
films.
1. EXPERIMENTAL SET-UP
The set-up is schematically shown in Fig. 1. The
system consists of the low-pressure magnetron 2 with
target diameter of 170 mm and the RF ICP source of
activated particles of reactive gas 3 placed inside the
chamber. The relative location of these components has
been chosen to provide the possibility of the simultane-
ous action on the processed surface of the flows of met-
al atoms, activated particles of reactive gas and ions of
rare or reactive gas. Power supplies are able to deliver
up to 6 kW to the magnetron and up to 1 kW to the
plasma source. Residual pressure was about 10
-3
Pa,
while working gas pressure varied in the range
(5…10)·10
-2
Pa. Experiments were conducted using
Argon and Oxygen, and there was a possibility to feed
the gas immediately to the chamber, or to the plasma
source vessel. In the last case a pressure drop occurs
between the source and the chamber.
230 ISSN 1562-6016. ВАНТ. 2019. №1(119)
О2
Ar
О2
2 3
1
5
4
1
6
7
1
1
1
12
7
6
1
4
4
10 cm
8
6
1
9
6
1
11
61
О2
Ar
10
61
Fig. 1. Scheme of the experimental set-up:
1 – DC magnetron power supply; 2 – magnetron;
3 – RF ICP source; 4, 6 – RF generator;
5, 7 – RF matchbox; 8 – ion source; 9 – DC power sup-
ply; 10 – pulsed power supply for samples polarization;
11 – samples rotation system; 12 – probe trajectory
1.1. MEASUREMENT TECHNIQUE OF RADIAL
DISTRIBUTIONS OF ION CURRENT
In order to measure spatial distribution of ion current
density a flat probe of 5 mm diameter was put into the
chamber. The probe mounting allowed to move the
probe without vacuum break along the trajectory shown
in the Fig. 1. The distance from the probe to the magne-
tron target was 250 mm. Potentiometer mechanically
connected to L-shaped probe shaft allowed to convert
rotation angle to voltage. This coordinate signal along
with the probe current signal (measured as the voltage
drop on a shunt resistor) was measured using an analog-
to-digital converter and recorded by a computer.
An important question for our measurements was the
probe biasing. Usually, it is enough to apply to the
probe a few tens of Volts of negative bias to be in ion
saturation region of the current-voltage characteristics
of the probe. However, magnetron discharge is known
as intense electron source, and electron energies might
be quite significant. Thus before the main measurements
the influence of the probe bias on the measurement re-
sult was investigated.
-15 -10 -5 0 5 10
0,0
0,2
0,4
0,6
0,8
1,0
1,2
Plasma Source
8·10
-4
Torr
I,
m
A
R, cm
0 V
-25 V
-50 V
-15 -10 -5 0 5 10
-3,0
-2,5
-2,0
-1,5
-1,0
-0,5
0,0
0,5
0 В
-25 В
-50 В
-80 В
I,
m
A
R, cm
Magnetron
5·10
-4
Torr
-15 -10 -5 0 5 10
-2,5
-2,0
-1,5
-1,0
-0,5
0,0
0,5
0 В
-25 В
-50 В
-80 В
I,
m
A
R, cm
Magnetron
8·10
-4
Torr
Fig. 2. Photo of relative arrangement of plasma source
and magnetron; spatial distributions of probe current at
different probe biasing
The spatial distributions of probe current at different
probe biasing are shown in Fig. 2 separately for magne-
tron and plasma source. It can be seen that -25 V bias is
enough to measure ion current from ICP, while at least
-50 V is necessary to suppress electron flow from the
magnetron at the pressure of 8·10
-4
Torr. Even more
voltage (-80 V) is required at lower pressure of
8·10
-4
Torr. All the following measurements were done
with the probe bias of -80 V.
2. EXPERIMENTAL RESULTS
Spatial distributions of ion current was studied ex-
perimentally for the plasma source and the magnetron
separately, while at the final stage simultaneous opera-
tion of the both devices was researched. Gas pressure
and discharge power appear as variable parameters. Ad-
ditionally the influence of pressure difference between
the plasma source and main chamber was investigated
as well as the impact of gas type (Argon, Oxygen) on
the ion flow to the processed surface. One more im-
portant factor influencing the ion current density to the
surface is the surface shape. Depending on the shape ion
flow may be focused or defocused changing the current
density by few times. The results of investigation of ion
current density response to variation of the mentioned
factors are presented below.
2.1. PLASMA SOURCE:
DEPENDENCE ON DISCHARGE POWER
The experiments was done at Argon pressure in the
chamber of 5·10
-4
Torr. Radial distributions of the ion
current density are shown in Fig. 3 for different RF
power input to the ICP source. First of all, one can see
significant asymmetry of the distributions. Due to
asymmetric placement of the plasma source they are
shifted towards its position. Fig. 3 also shows the de-
pendence of maximum ion current density on the RF
power. One can expect linear dependence, but at low
powers the current has lower derivative on the RF pow-
er. In order to understand this behavior of ion current, a
series of photos was taken for different RF powers
(Fig. 4).
-15 -10 -5 0 5 10
0,0
0,2
0,4
0,6
0,8
1,0
1,2
500W
400W
300W
I,
m
A
R, cm
200W
Argon 0.5 mTorr
200 300 400 500
0,0
0,3
0,6
0,9
1,2
0.5 mTorr
I,
m
A
P, W
Fig. 3. Radial distributions of ion current density for
different RF power input to the ICP source and depend-
ence of maximum ion current density on the RF power
It can be seen from the figure that the glow intensity
from the source vessel does not depend on RF power.
Moreover, it even drops a bit with the power growth.
The excessive power is absorbed by the outer plasma.
Its brightness grows linearly with the RF power. Note
that the ion bombardment of a sample placed outside the
plasma source is more intense in the case of existence of
the outer plasma.
ISSN 1562-6016. ВАНТ. 2019. №1(119) 231
200 W 300 W 400 W 500 W
500 1 10
3
³ 1.5 10
3
³
0
100
200
220
0
BK n,
GK n 10+,
RK n 25-,
1700500 n
Fig. 4. ICP evolution depending on RF power.
Top row: plasma source photos for different RF powers;
plot: glow intensity distribution along the marked line
2.2. PLASMA SOURCE:
DEPENDENCE ON GAS PRESSURE
Radial profiles of ion current to the probe are showh
in Fig. 5 for different Argon and Oxygen pressures. It is
important that the gas in this case was fed into the plas-
ma source vessel, so a pressure difference exists be-
tween the vessel and the main chamber. The ion current
demonstrates a week dependence on Argon pressure
(Fig. 5), while significant ion current drop was observed
after change Argon to Oxygen at the same pressure.
Note that with Argon the plasma was situated both in-
side and outside the plasma source, while in the Oxygen
case the plasma glowed only inside the source vessel.
As we seen above the ion bombardment in this case is
less pronounced. Another reason for this current drop is
higher power loss in the plasma of molecular gases.
Next figure shows the radial distribution of the ion
current as well as the photo of plasma glow for the case
of Argon feeding to main chamber rather then to the
plasma source.
0,0
0,2
0,4
0,6
0,8
1,0
Argon
5·10
-4
Torr
7·10
-4
Torr
1·10
-3
Torr
1.5·10
-3
TorrI,
m
A
-15 -10 -5 0 5 10
R, cm
Oxygen
5·10
-4
Torr
4 6 8 10 12 14 16
0,0
0,2
0,4
0,6
0,8
1,0
Ar
O
2
O
2
+Ar
I,
m
A
p, 10
-4
Torr
Fig. 5. Radial distributions of ion current density for
different Argon and Oxygen pressure; dependence of
maximum ion current density on gas pressure
-15 -10 -5 0 5 10
0,0
0,2
0,4
0,6
0,8
1,0
1,2
0.5 mTorr
0.8 mTorr
to chamber
to chamber
I,
m
A
R, cm
500 W
Fig. 6. Radial distributions of ion current density for
different Argon pressures with different directions of the
gas feeding
One can see that in this case a regime is possible
without plasma inside the plasma source. The possibility
for plasma to exist in the tree modes (inside, outside,
and both) causes changes in the ion current dependence
on the gas pressure seen in Figs. 6 and 3. The "plasma
in" mode is preferable for reactive gas activation fed
trough the ICP source. In this case the RF power is for-
warder for molecules dissociation and excitation, while
the "plasma out" mode is more suitable for ion bom-
bardment of the processed sample.
2.3. DEPENDENCE ON THE SAMPLE SHAPE
It should be mentioned that the ion current to the
plane probe depends not only on the power deposited to
the plasma source, but also on plasma boundary condi-
tions. Fig. 7 shows that the ion current to the probe
placed in front of the plasma source is approximately 2
times higher than the current to the same probe at the
same point and at the same conditions, but in the pres-
ence of the substrate holder behind the probe.
200 300 400 500
0,0
0,2
0,4
0,6
0,8
Probe on the sample holder
I,
m
A
P, W
Probe
Fig. 7. Comparison of ion currents to the probe with or
without the sample holder at the same conditions
2.4. JOINT OPERATION OF MAGNETRON
AND PLASMA SOURCE
Fig. 8 shows in comparison the radial distributions
of ion current density from plasma source and magne-
tron for separate and joint operation. It is obvious that
ion current from the plasma source is always greater
than the current from magnetron plasma, and in the first
case the distribution peak is shifted towards the plasma
source. One can expect the ion current at joint operation
of magnetron and plasma source to be the sum of the
currents from the devices. However, measured summary
ion current in peripheral regions is even lower then one
of the summands. The summary current distribution is
noticeably narrower then the one for plasma source.
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
Gas to
source
I,
m
A
p
Ar
= 0.8 mTorr
I
m
= 6 A
P
RF
= 500 W
Magnetron 3A
Magnetron
Gas to
chamber
Plasma
Source
Joint
operation
-15 -10 -5 0 5 10
R, cm
Fig. 8. Radial distributions of ion current density from
plasma source and magnetron
500 W
400 W
300 W
232 ISSN 1562-6016. ВАНТ. 2019. №1(119)
CONCLUSIONS
Thus, in the present paper the experimental research
of spatial distributions of ion current to a sample in
technological set-up with magnetron sputtering system
and ICP source is reported. Varying the process param-
eters (magnetron power, gas type and pressure, ICP
power, and sample bias) it has been found that:
- the discharge in the ICP source can operate in 3
modes with different plasma location;
- at simultaneous operation of magnetron and plas-
ma source the ion current to a sample is not an arithme-
tic sum of the currents from these devices;
- the sample shape demonstrates significant influ-
ence on the ion current in the researched system.
The obtained results are useful for investigation of ef-
fect of nonequilibrium heating of the sample surface due
to relaxation of kinetic energy of ions, atoms and elec-
trons, as well as energy of exothermic chemical reac-
tions at synthesis of Ta2O5 and TaB2 films.
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Article received 23.09.2018
ИССЛЕДОВАНИЕ ВЗАИМОДЕЙСТВИЯ МЕЖДУ ИОННО-ПУЧКОВОЙ ПЛАЗМОЙ
И ОБРАБАТЫВАЕМОЙ ПОВЕРХНОСТЬЮ ПРИ СИНТЕЗЕ ДИБОРИДА
И ПЕНТАОКСИДА ТАНТАЛА
С. Яковин, А. Зыков, С. Дудин, А. Дахов, Н. Ефименко
ʀʩʩʣʝʜʦʚʘʥ rʧʨʦʩʪʨʘʥʩʪʚʝʥʥʳʝ ʨʘʩʧʨʝʜʝʣʝʥʠ ̫ʧʣʦʪʥʦʩʪʠ ʠʦʥʥʦʛʦ ʪʦʢʘ ʥʘ ʦʙʨʘʟʝʮ ʚ ʪʝʭʥʦʣʦʛʠʯʝʩʢʦʡ
ʫʩʪʘʥʦʚʢʝ ʩ ʤʘʛʥʝʪʨʦʥʦʤ ʠ ʠʥʜʫʢʮʠʦʥʥʳʤ ʠʩʪʦʯʥʠʢʦʤ ʧʣʘʟʤʳ. ʀʟʤʝʨʝʥʳ ʟʘʚʠʩʠʤʦʩʪʠ ʧʦʪʦʢʘ ʠʦʥʦʚ ʥʘ
ʦʙʨʘʙʘʪʳʚʘʝʤʫ ʁʧʦʚʝʨʭʥʦʩʪ ɹʦʪ ʧʘʨʘʤʝʪʨʦʚ ʧʨʦʮʝʩʩʘ ʦʩʘʞʜʝʥʠʷ, ʪʘʢʠʭ ʢʘʢ: ʤʦʱʥʦʩʪʴ ʨʘʟʨʷʜʘ ʤʘʛʥʝʪʨʦʥʘ
ʠ ʠʥʜʫʢʪʠʚʥʦʛʦ ʨʘʟʨʷʜʘ, ʪʠʧ ʠ ʜʘʚʣʝʥʠʝ ʛʘʟʘ, ʤʦʱʥʦʩʪʴ, ʧʦʪʝʥʮʠʘʣ ʩʤʝʱʝʥʠʷ, ʧʦʜʘʚʘʝʤʳʡ ʥʘ ʦʙʨʘʟʝʮ. ʆʙ-
ʩʫʞʜʘʪʁʩʷ ʚʣʠʷʥʠʝ ʥʝʨʘʚʥʦʚʝʩʥʦʛʦ ʥʘʛʨʝʚʘ ʧʦʚʝʨʭʥʦʩʪʠ ʦʙʨʘʟʮʘ ʟʘ ʩʯʝʪ ʨʝʣʘʢʩʘʮʠʠ ʢʠʥʝʪʠʯʝʩʢʦʡ ʵʥʝʨʛʠʠ
ʠʦʥʦʚ, ʘʪʦʤʦʚ ʠ ʵʣʝʢʪʨʦʥʦʚ, ʘ ʪʘʢʞʝ ʵʥʝʨʛʠʠ ʵʢʟʦʪʝʨʤʠʯʝʩʢʠʭ ʭʠʤʠʯʝʩʢʠʭ ʨʝʘʢʮʠʡ ʧʨʠ ʩʠʥʪʝʟʝ ʧʣʝʥʦʢ
Ta2O5 ʠ TaB2. ʀʩʩʣʝʜʦʚʘʥʦ ʚʣʠʷʥʠʝ ʬʦʨʤʳ ʦʙʨʘʟʮʘ ʥʘ ʠʦʥʥʫʶ ʙʦʤʙʘʨʜʠʨʦʚʢʫ.
ДОСЛІДЖЕННЯ ВЗАЄМОДІЇ МІЖ ІОННО-ПУЧКОВОЮ ПЛАЗМОЮ ТА ОБРОБЛЮВАНОЮ
ПОВЕРХНЕЮ ПРИ СИНТЕЗІ ДИБОРИДУ ТА ПЕНТАОКСИДУ ТАНТАЛУ
С. Яковін, О. Зиков, С. Дудін, О. Дахов, Н. Єфименко
Досліджено просторові розподіли щільності іонного струму на зразок у технологічній установці з магнет-
роном та індукційним джерелом плазми. Виміряно залежності потоку іонів на оброблювану поверхню від
параметрів процесу осадження, таких як: потужність магнетрона і індуктивного розряду, тип і тиск газу,
потужність, потенціал зсуву на зразок. Обговорюється вплив нерівноважного нагріву поверхні зразка за ра-
хунок релаксації кінетичної енергії іонів, атомів і електронів, а також енергії екзотермічних хімічних реак-
цій при синтезі плівок Ta2O5 і TaB2. Досліджено вплив форми зразка на іонне бомбардування.
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| id | nasplib_isofts_kiev_ua-123456789-194909 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-12-02T11:08:50Z |
| publishDate | 2019 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Yakovin, S. Zykov, A. Dudin, S. Dakhov, A. Yefymenko, N. 2023-12-01T14:00:22Z 2023-12-01T14:00:22Z 2019 Investigation of interaction between ion-beam plasma and processed surface during the synthesis of tantalum diboride and pentaoxide / S. Yakovin, A. Zykov, S. Dudin, A. Dakhov, N. Yefymenko // Problems of atomic science and technology. — 2019. — № 1. — С. 229-232. — Бібліогр.: 10 назв. — англ. 1562-6016 PACS: 52.77.-j, 81.15.-z https://nasplib.isofts.kiev.ua/handle/123456789/194909 The paper is devoted to investigation of spatial distributions of ion current density to a sample in technological set-up with magnetron sputtering system and ICP source. The dependence of the ion flux towards the processed surface on the parameters of the deposition process was measured. The following parameters were varied: magnetron discharge power, gas type and pressure, target-sample distance, inductive discharge power, and bias potential applied to the samples. The effect of nonequilibrium heating of the sample surface due to relaxation of kinetic energy of ions, atoms and electrons, as well as energy of exothermic chemical reactions at synthesis of Ta₂O₅ and TaB₂ films is discussed. The influence of sample shape on the ion bombardment is also investigated. Досліджено просторові розподіли щільності іонного струму на зразок у технологічній установці з магнетроном та індукційним джерелом плазми. Виміряно залежності потоку іонів на оброблювану поверхню від параметрів процесу осадження, таких як: потужність магнетрона і індуктивного розряду, тип і тиск газу, потужність, потенціал зсуву на зразок. Обговорюється вплив нерівноважного нагріву поверхні зразка за рахунок релаксації кінетичної енергії іонів, атомів і електронів, а також енергії екзотермічних хімічних реакцій при синтезі плівок Ta₂O₅ і TaB₂. Досліджено вплив форми зразка на іонне бомбардування. Исследованы пространственные распределения плотности ионного тока на образец в технологической установке с магнетроном и индукционным источником плазмы. Измерены зависимости потока ионов на обрабатываемую поверхность от параметров процесса осаждения, таких как: мощность разряда магнетрона и индуктивного разряда, тип и давление газа, мощность, потенциал смещения, подаваемый на образец. Обсуждаются влияние неравновесного нагрева поверхности образца за счет релаксации кинетической энергии ионов, атомов и электронов, а также энергии экзотермических химических реакций при синтезе пленок Ta₂O₅ и TaB₂. Исследовано влияние формы образца на ионную бомбардировку. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Low temperature plasma and plasma technologies Investigation of interaction between ion-beam plasma and processed surface during the synthesis of tantalum diboride and pentaoxide Дослідження взаємодії між іонно-пучковою плазмою та оброблюваною поверхнею при синтезі дибориду та пентаоксиду танталу Исследование взаимодействия между ионно-пучковой плазмой и обрабатываемой поверхностью при синтезе диборида и пентаоксида тантала Article published earlier |
| spellingShingle | Investigation of interaction between ion-beam plasma and processed surface during the synthesis of tantalum diboride and pentaoxide Yakovin, S. Zykov, A. Dudin, S. Dakhov, A. Yefymenko, N. Low temperature plasma and plasma technologies |
| title | Investigation of interaction between ion-beam plasma and processed surface during the synthesis of tantalum diboride and pentaoxide |
| title_alt | Дослідження взаємодії між іонно-пучковою плазмою та оброблюваною поверхнею при синтезі дибориду та пентаоксиду танталу Исследование взаимодействия между ионно-пучковой плазмой и обрабатываемой поверхностью при синтезе диборида и пентаоксида тантала |
| title_full | Investigation of interaction between ion-beam plasma and processed surface during the synthesis of tantalum diboride and pentaoxide |
| title_fullStr | Investigation of interaction between ion-beam plasma and processed surface during the synthesis of tantalum diboride and pentaoxide |
| title_full_unstemmed | Investigation of interaction between ion-beam plasma and processed surface during the synthesis of tantalum diboride and pentaoxide |
| title_short | Investigation of interaction between ion-beam plasma and processed surface during the synthesis of tantalum diboride and pentaoxide |
| title_sort | investigation of interaction between ion-beam plasma and processed surface during the synthesis of tantalum diboride and pentaoxide |
| topic | Low temperature plasma and plasma technologies |
| topic_facet | Low temperature plasma and plasma technologies |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/194909 |
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