IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals
For the first time, information on the surface relief of the layered GaS and doped GaS:Yb single crystals subjected to gamma-irradiation was obtained using atomic force microscopy (AFM) and Fourier-transform infrared spectroscopy (FTIR). It was found that GaS is characterized by a non-uniform distri...
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
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| Cite this: | IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals / A.M. Pashayev, B.G. Tagiyev, R.S. Madatov, N.N. Gadzhieva, A.A. Aliev, F.G. Asadov // Problems of atomic science and technology. — 2019. — № 2. — С. 34-38. — Бібліогр.: 11 назв. — англ. |
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Pashayev, A.M. Tagiyev, B.G. Madatov, R.S. Gadzhieva, N.N. Aliev, A.A. Asadov, F.G. 2023-12-01T16:09:50Z 2023-12-01T16:09:50Z 2019 IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals / A.M. Pashayev, B.G. Tagiyev, R.S. Madatov, N.N. Gadzhieva, A.A. Aliev, F.G. Asadov // Problems of atomic science and technology. — 2019. — № 2. — С. 34-38. — Бібліогр.: 11 назв. — англ. 1562-6016 PACS: 78.30.Fs; 61.80.Ed; 61.82.Fk https://nasplib.isofts.kiev.ua/handle/123456789/194934 For the first time, information on the surface relief of the layered GaS and doped GaS:Yb single crystals subjected to gamma-irradiation was obtained using atomic force microscopy (AFM) and Fourier-transform infrared spectroscopy (FTIR). It was found that GaS is characterized by a non-uniform distribution of irregularities with different heights and periodicities, and when doping crystals with Yb atoms, the distribution of irregularities becomes more orderly, the height and periodicity of irregularities decreases. In the FTIR spectra, changes in the reflection coefficients of the surface of GaS and GaS:Yb single crystals are observed as a function of the gammairradiation dose (Фγ = 30…200 krad), and on the basis of spectroscopic and microscopic changes, it was found that doped single crystals are the most radiation-resistant. Вперше методами атомно-силової мікроскопії (АСМ) і ІК-фур'є-спектроскопії отримано інформацію про рельєф поверхні нелегованих GaS і легованих монокристалів GaS:Yb, підданих гамма-опроміненню. Встановлено, що для монокристалів GaS характерний нерівномірний розподіл нерівностей з різною висотою і періодичністю, а при легуванні кристалів атомами Yb розподіл нерівностей упорядкується, їх висота і періодичність зменшаться. В ІК-фур’є-спектрах спостерігаються зміни коефіцієнтів відбиття поверхні монокристалів GaS і GaS:Yb в залежності від дози гамма-опромінення (Фγ = 30...200 крад), і на основі цих змін встановлено, що леговані монокристали є більш радіаційно стійкими. Впервые методами атомно-силовой микроскопии (АСМ) и ИК-фурье-спектроскопии получена информация о рельефе поверхности нелегированных GaS и легированных монокристаллов GaS:Yb, подвергнутых гамма-облучению. Установлено, что для монокристаллов GaS характерно неравномерное распределение неровностей с различной высотой и периодичностью, а при легировании кристаллов атомами Yb распределение неровностей упорядочится, их высота и периодичность уменьшатся. В ИК-фурьеспектрах наблюдаются изменения коэффициентов отражения поверхности монокристаллов GaS и GaS:Yb в зависимости от дозы гамма-облучения (Фγ = 30…200 крад), и на основе этих изменений установлено, что легированные монокристаллы являются более радиационно стойкими. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Physics of radiation damages and effects in solids IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals ІК-спектроскопія і АСМ-мікроскопія поверхні гамма-опромінених шаруватих монокристалів GaS і GaS:Yb ИК-спектроскопия и АСМ-микроскопия поверхности гамма-облученных слоистых монокристаллов GaS и GaS:Yb Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals |
| spellingShingle |
IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals Pashayev, A.M. Tagiyev, B.G. Madatov, R.S. Gadzhieva, N.N. Aliev, A.A. Asadov, F.G. Physics of radiation damages and effects in solids |
| title_short |
IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals |
| title_full |
IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals |
| title_fullStr |
IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals |
| title_full_unstemmed |
IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals |
| title_sort |
ir-spectroscopy and afm-microscopy of the surface of gamma-irradiated gas and gas:yb layered single crystals |
| author |
Pashayev, A.M. Tagiyev, B.G. Madatov, R.S. Gadzhieva, N.N. Aliev, A.A. Asadov, F.G. |
| author_facet |
Pashayev, A.M. Tagiyev, B.G. Madatov, R.S. Gadzhieva, N.N. Aliev, A.A. Asadov, F.G. |
| topic |
Physics of radiation damages and effects in solids |
| topic_facet |
Physics of radiation damages and effects in solids |
| publishDate |
2019 |
| language |
English |
| container_title |
Вопросы атомной науки и техники |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| format |
Article |
| title_alt |
ІК-спектроскопія і АСМ-мікроскопія поверхні гамма-опромінених шаруватих монокристалів GaS і GaS:Yb ИК-спектроскопия и АСМ-микроскопия поверхности гамма-облученных слоистых монокристаллов GaS и GaS:Yb |
| description |
For the first time, information on the surface relief of the layered GaS and doped GaS:Yb single crystals subjected to gamma-irradiation was obtained using atomic force microscopy (AFM) and Fourier-transform infrared spectroscopy (FTIR). It was found that GaS is characterized by a non-uniform distribution of irregularities with different heights and periodicities, and when doping crystals with Yb atoms, the distribution of irregularities becomes more orderly, the height and periodicity of irregularities decreases. In the FTIR spectra, changes in the reflection coefficients of the surface of GaS and GaS:Yb single crystals are observed as a function of the gammairradiation dose (Фγ = 30…200 krad), and on the basis of spectroscopic and microscopic changes, it was found that doped single crystals are the most radiation-resistant.
Вперше методами атомно-силової мікроскопії (АСМ) і ІК-фур'є-спектроскопії отримано інформацію про рельєф поверхні нелегованих GaS і легованих монокристалів GaS:Yb, підданих гамма-опроміненню. Встановлено, що для монокристалів GaS характерний нерівномірний розподіл нерівностей з різною висотою і періодичністю, а при легуванні кристалів атомами Yb розподіл нерівностей упорядкується, їх висота і періодичність зменшаться. В ІК-фур’є-спектрах спостерігаються зміни коефіцієнтів відбиття поверхні монокристалів GaS і GaS:Yb в залежності від дози гамма-опромінення (Фγ = 30...200 крад), і на основі цих змін встановлено, що леговані монокристали є більш радіаційно стійкими.
Впервые методами атомно-силовой микроскопии (АСМ) и ИК-фурье-спектроскопии получена информация о рельефе поверхности нелегированных GaS и легированных монокристаллов GaS:Yb, подвергнутых гамма-облучению. Установлено, что для монокристаллов GaS характерно неравномерное распределение неровностей с различной высотой и периодичностью, а при легировании кристаллов атомами Yb распределение неровностей упорядочится, их высота и периодичность уменьшатся. В ИК-фурьеспектрах наблюдаются изменения коэффициентов отражения поверхности монокристаллов GaS и GaS:Yb в зависимости от дозы гамма-облучения (Фγ = 30…200 крад), и на основе этих изменений установлено, что легированные монокристаллы являются более радиационно стойкими.
|
| issn |
1562-6016 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/194934 |
| citation_txt |
IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals / A.M. Pashayev, B.G. Tagiyev, R.S. Madatov, N.N. Gadzhieva, A.A. Aliev, F.G. Asadov // Problems of atomic science and technology. — 2019. — № 2. — С. 34-38. — Бібліогр.: 11 назв. — англ. |
| work_keys_str_mv |
AT pashayevam irspectroscopyandafmmicroscopyofthesurfaceofgammairradiatedgasandgasyblayeredsinglecrystals AT tagiyevbg irspectroscopyandafmmicroscopyofthesurfaceofgammairradiatedgasandgasyblayeredsinglecrystals AT madatovrs irspectroscopyandafmmicroscopyofthesurfaceofgammairradiatedgasandgasyblayeredsinglecrystals AT gadzhievann irspectroscopyandafmmicroscopyofthesurfaceofgammairradiatedgasandgasyblayeredsinglecrystals AT alievaa irspectroscopyandafmmicroscopyofthesurfaceofgammairradiatedgasandgasyblayeredsinglecrystals AT asadovfg irspectroscopyandafmmicroscopyofthesurfaceofgammairradiatedgasandgasyblayeredsinglecrystals AT pashayevam íkspektroskopíâíasmmíkroskopíâpoverhnígammaopromínenihšaruvatihmonokristalívgasígasyb AT tagiyevbg íkspektroskopíâíasmmíkroskopíâpoverhnígammaopromínenihšaruvatihmonokristalívgasígasyb AT madatovrs íkspektroskopíâíasmmíkroskopíâpoverhnígammaopromínenihšaruvatihmonokristalívgasígasyb AT gadzhievann íkspektroskopíâíasmmíkroskopíâpoverhnígammaopromínenihšaruvatihmonokristalívgasígasyb AT alievaa íkspektroskopíâíasmmíkroskopíâpoverhnígammaopromínenihšaruvatihmonokristalívgasígasyb AT asadovfg íkspektroskopíâíasmmíkroskopíâpoverhnígammaopromínenihšaruvatihmonokristalívgasígasyb AT pashayevam ikspektroskopiâiasmmikroskopiâpoverhnostigammaoblučennyhsloistyhmonokristallovgasigasyb AT tagiyevbg ikspektroskopiâiasmmikroskopiâpoverhnostigammaoblučennyhsloistyhmonokristallovgasigasyb AT madatovrs ikspektroskopiâiasmmikroskopiâpoverhnostigammaoblučennyhsloistyhmonokristallovgasigasyb AT gadzhievann ikspektroskopiâiasmmikroskopiâpoverhnostigammaoblučennyhsloistyhmonokristallovgasigasyb AT alievaa ikspektroskopiâiasmmikroskopiâpoverhnostigammaoblučennyhsloistyhmonokristallovgasigasyb AT asadovfg ikspektroskopiâiasmmikroskopiâpoverhnostigammaoblučennyhsloistyhmonokristallovgasigasyb |
| first_indexed |
2025-11-26T02:37:26Z |
| last_indexed |
2025-11-26T02:37:26Z |
| _version_ |
1850608603217526784 |
| fulltext |
ISSN 1562-6016. PASТ. 2019. №2(120), p. 34-38.
IR-SPECTROSCOPY AND AFM-MICROSCOPY OF THE SURFACE
OF GAMMA-IRRADIATED GaS AND GaS:Yb LAYERED
SINGLE CRYSTALS
A.M. Pashayev
1
, B.G. Tagiyev
1
, R.S. Madatov
1,2
, N.N. Gadzhieva
2
, A.A. Aliev
1
, F.G. Asadov
2
1
National Aviation Academy of Azerbaijan,
AZ1045, Baku, Azerbaijan;
2
Institute of Radiation Problems National Academy of Sciences of Azerbaijan,
AZ1143, Baku, Azerbaijan
E-mail: nushaba6@mail.ru
For the first time, information on the surface relief of the layered GaS and doped GaS:Yb single crystals
subjected to gamma-irradiation was obtained using atomic force microscopy (AFM) and Fourier-transform infrared
spectroscopy (FTIR). It was found that GaS is characterized by a non-uniform distribution of irregularities with
different heights and periodicities, and when doping crystals with Yb atoms, the distribution of irregularities
becomes more orderly, the height and periodicity of irregularities decreases. In the FTIR spectra, changes in the
reflection coefficients of the surface of GaS and GaS:Yb single crystals are observed as a function of the gamma-
irradiation dose (Фγ = 30…200 krad), and on the basis of spectroscopic and microscopic changes, it was found that
doped single crystals are the most radiation-resistant.
PACS: 78.30.Fs; 61.80.Ed; 61.82.Fk
INTRODUCTION
Layered A
3
B
6
semiconductors, in particular, gallium
sulfide single crystals (GaS) are promising materials for
radiation detectors of various types. On the basis of
these single crystals, radiation detectors of gamma-
quanta operating at room temperature [15] are
fabricated. The increased interest in these compounds is
due to the anisotropy of their crystalline structure,
which allows obtaining perfect faces with a sufficiently
low density of surface states, which is important for
obtaining high quality heterojunctions.
One of the effective methods for changing the
surface of layered gallium sulfide single crystals is to
irradiate it with γ-quanta [2–6]. The depth of penetration
of gamma-quanta is comparable to the value of the
inverse light absorption coefficient (~ 10
2
nm), which
leads to the desorption of gases from the surface and
recharging the surface active centers. This factor is
decisive in many processes occurring near the surface of
the crystal. Therefore, studying the effect of external
influences, including gamma-radiation, on the edge
photoconductivity (FC) of a defective semiconductor,
one can establish the role of surface heterogeneity and
roughness during its formation [4]. The most
informative methods for studying the surface of
semiconductors are the methods of FTIR and AFM
[7, 8].
Based on these considerations, the present work
presents the results of AFM and FTIR studies of
changes in the surface relief of gamma-irradiated
layered GaS and GaS:Yb single crystals.
EXPERIMENTAL TECHNIQUE
Single crystals of p-GaS were grown by the method
of directional solidification of the melt (vertical version
of the Bridgman method). When growing GaS, an
excess of sulfur (1.5%) was used to determine the
possibility of filling vacancies with sulfur atoms. The
resistivity of the samples obtained along and
perpendicular to the C axis at room temperature was
3∙10
7
and 2∙10
9
cm, respectively. Doping of Yb was
carried out in the process of crystal growth, and the
concentration of Yb in crystals was NYb ~ 10
18
cm
-3
.
Indium, which was smelted on the surface of gallium
sulfide at a temperature of 150 °C, was used as the
ohmic contacts. Microstructural and X-ray phase
analyzes showed that the obtained crystals were
homogeneous and did not contain crystalline inclusions
[2, 3].
The Fourier transform infrared reflection spectra of
the samples were recorded on a Varian 3600 FTIR
spectrometer in the frequency range ν = 400…100 cm
-1
at room temperature. The reflection spectra were
obtained at an angle of incidence = 15°.
Microscopic studies of the surface relief of the initial
gamma-irradiated GaS and GaS:Yb samples were
carried out with an AFM. For this purpose, two-
dimensional (2D) and three-dimensional (3D) surface
AFM images were obtained, as well as histograms
(distribution curves of surface images on the size of
irregularities) in the horizontal and vertical directions.
Samples were irradiated with gamma-quanta from a
60
Co source at room temperature with a dose rate
dФγ/dt = 15.66 rad/s. The samples were irradiated with
doses of 30, 50, 100, 140, and 200 krad [6, 9].
RESULTS AND ITS DISCUSSION
IR reflection spectra in the region of lattice
oscillations of the initial (1) and irradiated doses of
Фγ = 140 (2) and 200 krad (3) of GaS and GaS:Yb
single crystals are shown in Fig. 1. As seen from
Fig. 1,a (curve 1), in the reflection spectra transverse
νTO = 315.3 cm
–1
and longitudinal νLO = 365.6 cm
–1
oscillations, which converge to classical dispersive
analysis, are observed in the original GaS. Gamma-
irradiation of GaS samples with doses of 140 and
200 krad slightly changes (distorts) the lattice reflection
spectra (curves 2 and 3). With an increase in the
gamma-irradiation dose, the value of the reflection
coefficient decreases, and the region of residual rays
mailto:nushaba6@mail.ru
deepens. The observed feature in the band of residual
GaS rays that appears in the irradiated samples can
presumably be explained by a change in the surface
state under the action of gamma-radiation and the
formation of quasi-phonons, which lie in the region of
residual rays [10].
Fig. 1. FTIR spectra of the original, non-irradiated (1), and irradiated with doses of Ф= 140 (2)
and 200 krad (3) of GaS (a) and GaS:Yb (b) single crystals
Fig. 1,b shows the reflection spectra of the initial
(curve 1) and irradiated doses of 140 and 200 krad
(curves 2 and 3) of the GaS:Yb samples. As can be seen
from Fig. 1,b, the doping of gallium sulfide with
ytterbium actually does not affect the values of the
frequencies of longitudinal and transverse oscillations.
However, the surface state improves and is
accompanied by an increase in the reflection coefficient
(albedo) by R ~ 5…8%. Gamma-irradiation of GaS:Yb
samples with doses of 140 and 200 krad leads to a
deterioration of the surface state, since R values with
increasing absorbed radiation dose are decreasing.
Fig. 2 presents the changes in the values of the
difference of the reflection coefficient ΔR = R0R
(where R0 and R are the reflection coefficients of the
original and gamma-irradiated samples, respectively)
depending on the absorbed gamma-irradiation dose for
the GaS (curve 1) and GaS:Yb samples (curve 2). A
comparative analysis of these dependencies reveals the
following:
1. Both dependencies are close to a parabolic law.
2. The growth rate of the difference ΔR determined
in the linear regions of dependences in the case of
gamma-irradiated GaS samples is ~ 1.5 times higher
than the growth rate of the ΔR value in the case of
gamma -irradiated GaS:Yb samples.
3. The sharp increse in the difference ΔR occur for
GaS samples with an absorbed dose of Φγ ≥ 50 krad, and
for GaS:Yb samples at Φγ ≥ 140 krad.
The observed features of the curves of ΔR versus Φγ
for GaS and GaS:Yb samples show that the gallium
sulfide surface is more sensitive to gamma-ray effects
than gallium sulfide surface doped with ytterbium. In
this case, the effect of gamma-quanta causes the
heterogeneity and roughness of the surface and,
consequently, leads to its deterioration in these layered
single crystals.
The obtained results are in good agreement with the
results of [5], according to which, GaS and GaS:Yb
single crystals with values of Фγ ≤ 140 krad are
radiation-resistant, and above these values of absorbed
doses, respectively, are not radiation-resistant.
Changes in the surface relief of layered GaS and
GaS:Yb single crystals caused by gamma-quanta were
also traced by the microscopic (AFM) method. As an
example, Fig. 3 shows three-dimensional (3d) images of
the surface of the original (see Fig. 3,a,b) and gamma-
irradiated with 140 krad (see Fig. 3,c,d) samples of GaS
and GaS:Yb, respectively. Comparison of the surfaces
of the initial single crystals shows that if the surface of
gallium sulfide is characterized by the presence of sub-
roughness and heterogeneity, the introduction of
ytterbium impurity into the GaS structure leads to a
smoothing and uniformity of its surface. In this case, the
depth of irregularities in the case of GaS:Yb decreases
by a factor of ~ 5 (from 8 to 40 nm) compared to GaS.
Irradiation of GaS and GaS:Yb single crystals with a
dose of 140 krad is accompanied by a change in the
surface state of these samples. After irradiation with
gamma-rays with a dose of 140 krad, the surface state of
GaS deteriorates significantly, while minor changes occur
on the GaS:Yb surface. Annealing the samples at a
temperature of t = 100 °C for 1 hour partially restores the
surface of the irradiated samples. It should be noted that the
analysis of 3D images of surfaces of γ-irradiated GaS and
GaS:Yb samples with doses of 30, 50, 100, 140, and
200 krad allows us to conclude that the boundary values of
the dose of surface changes are 50 and 140 krad,
respectively.
Fig. 2. Changes of the values of the difference of the
reflection coefficient (R) depending on the absorbed
dose of gamma-irradiation for GaS (1) and GaS:Yb
(2) single crystals
a b
Fig. 3. Three-dimensional images of the surface of the original (a, b) and -irradiated dose with of 140 krad (c, d)
of GaS (a, c) and GaS:Yb(b, d) single crystals
Fig. 4. Histograms of 2d images of the initial (a, b)
and -irradiated doses of 140 krad (c, d) of GaS single
crystals in horizontal (a, c) and vertical (b, d) directions
Fig. 5. Histograms of 2d images of the initial (a, b)
and -irradiated dose of 140 krad (c, d) GaS:Yb single
crystals in the horizontal (a, c) and vertical (b, d)
directions
Fig. 6. Dose dependences of the free volume of irregularities
in GaS (1) and GaS:Yb (2) single crystals.
(Dashed lines show exponential
approximating (regression) dependences)
Figs. 4 and 5 show the histograms of 2D images
(curves of the distribution of surface images by the size
of irregularities) in the horizontal and vertical directions
of the selected section (100100 nm). As can be seen
from the histograms, the GaS single crystal is
characterized by an uneven distribution of irregularities,
both in the horizontal and in the vertical directions with
different heights of ~ 30…40 nm and a frequency of
~ 16 nm (see Fig. 4,a,b). GaS:Yb single crystal
histograms show a uniform distribution of irregularities
in both horizontal and vertical directions with the same
height of ~ 25 nm and a frequency of ~ 13 nm (see
Fig. 5,a and b). Irradiation with a dose of 140 krad of
these samples leads to a strong (see Fig. 4,c,d) and
minor (see Fig. 5,c,d) changes in histograms for GaS
and GaS:Yb, respectively.
a b
c d
Considering the sub-roughness profile in the
framework of multifractal analysis, we can assume that
it has the invariance property when the same unit free
volume (straight cone of height h and diameter d) is
continuously repeated over the entire area [8, 9].
The dose dependence of a single free volume of
irregularities (a single average volume of a relief-
forming cone), which is shown in Fig. 6, was studied.
The dependence is exponential: V=A∙e
kx
(V is a single
average volume of a relief-forming cone, A is a single
crystal constant, k is an absorption coefficient, x is the
irradiation dose). As can be seen from Fig. 6, with an
increase in the gamma-irradiation dose to 140 krad, the
value of a single average volume of the relief-forming
cone V decreases by ~ 2.5…5 times (from 6000 and
5500 to 2500 and 1000 nm
3
) for GaS and GaS:Yb,
respectively.
CONCLUSIONS
The surface relief of undoped GaS and doped
GaS:Yb single crystals subjected to gamma-irradiation
was studied by AFM and FTIR. It was found that GaS is
characterized by an uneven distribution of irregularities
with different heights ~ 30…40 nm and a frequency of
~ 16 nm subjected to gamma-irradiation. When doping
crystals with Yb atoms, the distribution of irregularities
becomes more orderly, the height is ~ 25 nm, and the
periodicity of ~ 13 nm irregularities decrease. In the
FTIR spectra, changes in the reflection coefficients of
the surface of GaS and GaS:Yb single crystals are
observed as a function of the gamma-irradiation dose
(Фγ = 30…200 krad), and on the basis of these changes,
it was found that doped single crystals are the most
radiation-resistant.
The use of a single average volume of a relief-
forming cone was introduced as a characteristic of the
development of the surface of layered crystals.
Regression dependencies of the effect of the degree of
irradiation on a single average volume of the relief-
forming cone are proposed, expressed in the exponential
form V = A∙e
kx
. The dependence was established
between the distribution profile of a single free volume
of irregularities (a single average volume of a relief-
forming cone), obtained by AFM and the radiation
resistance of layered GaS:Yb single crystals.
In order to explain the experimental facts established
by us, we propose the following physical model of the
processes occurring during the accumulation of clusters
of defects consisting of VGa and Gai in the form of a
cone in grown crystals. When pure and impurity GaS
single crystals are irradiated with E ≈ 1.2 MeV and a
low dose of 30…200 krad, apparently due to radiation-
stimulated annealing of defects, the clusters of defects
decompose, releasing VGa (of which the cluster of
defects consists) and Gai which is located on the
periphery of the defect clusters. In this regard, the
volume of the periphery of the relief-forming cone
decreases with increasing radiation dose and, as a result,
the smoothing of defects on the surface of crystals
occurs [11]. Thus, the dose adjustment of defects and
the rate of change of free volume depending on the dose
of radiation determines the radiation resistance of
materials and does depend on the initial state of their
surfaces.
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Article received 11.01.2019
ИК-СПЕКТРОСКОПИЯ И АСМ-МИКРОСКОПИЯ ПОВЕРХНОСТИ
ГАММА-ОБЛУЧЕННЫХ СЛОИСТЫХ МОНОКРИСТАЛЛОВ GaS И GaS:Yb
А.M. Пашаев, Б.Г. Тагиев, Р.С. Мадатов, Н.Н. Гаджиева, A.А. Алиев, Ф.Г. Асадов
Впервые методами атомно-силовой микроскопии (АСМ) и ИК-фурье-спектроскопии получена
информация о рельефе поверхности нелегированных GaS и легированных монокристаллов GaS:Yb,
подвергнутых гамма-облучению. Установлено, что для монокристаллов GaS характерно неравномерное
распределение неровностей с различной высотой и периодичностью, а при легировании кристаллов атомами
Yb распределение неровностей упорядочится, их высота и периодичность уменьшатся. В ИК-фурье-
спектрах наблюдаются изменения коэффициентов отражения поверхности монокристаллов GaS и GaS:Yb в
зависимости от дозы гамма-облучения (Фγ = 30…200 крад), и на основе этих изменений установлено, что
легированные монокристаллы являются более радиационно стойкими.
ІК-СПЕКТРОСКОПІЯ І АСМ-МІКРОСКОПІЯ ПОВЕРХНІ
ГАММА-ОПРОМІНЕНИХ ШАРУВАТИХ МОНОКРИСТАЛІВ GaS І GaS:Yb
А.M. Пашаєв, Б.Г. Тагієв, Р.С. Мадатов, М.М. Гаджиєва, A.А. Алієв, Ф.Г. Асадов
Вперше методами атомно-силової мікроскопії (АСМ) і ІК-фур'є-спектроскопії отримано інформацію про
рельєф поверхні нелегованих GaS і легованих монокристалів GaS:Yb, підданих гамма-опроміненню.
Встановлено, що для монокристалів GaS характерний нерівномірний розподіл нерівностей з різною висотою
і періодичністю, а при легуванні кристалів атомами Yb розподіл нерівностей упорядкується, їх висота і
періодичність зменшаться. В ІК-фур’є-спектрах спостерігаються зміни коефіцієнтів відбиття поверхні
монокристалів GaS і GaS:Yb в залежності від дози гамма-опромінення (Фγ = 30...200 крад), і на основі цих
змін встановлено, що леговані монокристали є більш радіаційно стійкими.
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