IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals

• Published in: Вопросы атомной науки и техники
• Date: 2019
• Main Authors: Pashayev, A.M., Tagiyev, B.G., Madatov, R.S., Gadzhieva, N.N., Aliev, A.A., Asadov, F.G.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2019
• Subjects: Physics of radiation damages and effects in solids
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/194934
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals / A.M. Pashayev, B.G. Tagiyev, R.S. Madatov, N.N. Gadzhieva, A.A. Aliev, F.G. Asadov // Problems of atomic science and technology. — 2019. — № 2. — С. 34-38. — Бібліогр.: 11 назв. — англ.

For the first time, information on the surface relief of the layered GaS and doped GaS:Yb single crystals subjected to gamma-irradiation was obtained using atomic force microscopy (AFM) and Fourier-transform infrared spectroscopy (FTIR). It was found that GaS is characterized by a non-uniform distri...