Radiation-induced effects in silicon

• Published in: Вопросы атомной науки и техники
• Date: 2019
• Main Authors: Gaidar, G.P., Pinkovska, M.B., Starchyk, M.I.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2019
• Subjects: Physics of radiation damages and effects in solids
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/195210
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Radiation-induced effects in silicon / ИОФамилия // Problems of atomic science and technology. — 2019. — № 5. — С. 44-48. — Бібліогр.: 20 назв. — англ.

Results of complex studies of the structural properties of silicon irradiated with light ions of megaelectronvolt energies by fluences greater than 10¹⁶ cm⁻² are presented. It was found that during irradiation under conditions of large energy release in thin layer of crystal, the favorable condition...