Structural features of doped silicon single crystals

• Published in: Вопросы атомной науки и техники
• Date: 2022
• Main Authors: Azarenkov, N.A., Semenenko, V.E., Stervoyedov, N.G.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2022
• Subjects: Pure materials and vacuum technologies
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/195817
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Structural features of doped silicon single crystals / N.A. Azarenkov, V.E. Semenenko, N.G. Stervoyedov // Problems of Atomic Science and Technology. — 2022. — № 1. — С. 26-31. — Бібліогр.: 16 назв. — англ.

The nature of the change in the Fermi level of silicon under the influence of dopants, point defects, and dislocations has been determined. The parameters of the diffusion of impurities, the conditions for their appearance and removal in the process of directional crystallization and the post-crysta...