Control of the electrophysical characteristics of two-barrier silicon structures with a nanostructured base using gamma radiation
During this experimental study, samples of double-barrier structures were irradiated with various doses from a ⁶⁰Co source. The current-voltage characteristics of two-barrier structures from a silicon-based nanostructured base and the change in their spectral photocurrent before and after gamma irra...
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2023
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nasplib_isofts_kiev_ua-123456789-1961142025-02-23T19:00:24Z Control of the electrophysical characteristics of two-barrier silicon structures with a nanostructured base using gamma radiation Управління електрофізичними характеристиками двобар’єрних кремнієвих структур з наноструктурованою основою за допомогою гамма-випромінювання Madatov, R.S. Abasov, F.P. Asadov, F.G. Irradiation installations, diagnostic and research methods During this experimental study, samples of double-barrier structures were irradiated with various doses from a ⁶⁰Co source. The current-voltage characteristics of two-barrier structures from a silicon-based nanostructured base and the change in their spectral photocurrent before and after gamma irradiation were recorded and studied. Experimental results show that voltage values such as open-circuit voltage (Voc) as well as short-circuit current (Isc) and efficiency (η) change with the magnitude of the collection-dissipation voltage. В результаті даного експериментального дослідження зразки двобар’єрних структур опромінювалися різними дозами від джерела ⁶⁰Со. Виміряно та досліджено вольт-ампернi характеристики двобар’єрних структур з наноструктурованою основою на базi кремнію та їх спектральні зміни фотоструму до та після гамма-опромінення. Експериментальні результати показують, що значення напруги, такі як напруга холостого ходу (Voc), струм короткого замикання (Isc) та ефективність (η) залежать від величини напруги накопичення – розряду. 2023 Article Control of the electrophysical characteristics of two-barrier silicon structures with a nanostructured base using gamma radiation / R.S. Madatov, F.P. Abasov, F.G. Asadov // Problems of Atomic Science and Technology. — 2023. — № 2. — С. 157-159. — Бібліогр.: 16 назв. — англ. 1562-6016 PACS: 541.183:539.26; 537.84:621.315.92 DOI: https://doi.org/10.46813/2023-144-157 https://nasplib.isofts.kiev.ua/handle/123456789/196114 en Problems of Atomic Science and Technology application/pdf Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
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Irradiation installations, diagnostic and research methods Irradiation installations, diagnostic and research methods |
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Irradiation installations, diagnostic and research methods Irradiation installations, diagnostic and research methods Madatov, R.S. Abasov, F.P. Asadov, F.G. Control of the electrophysical characteristics of two-barrier silicon structures with a nanostructured base using gamma radiation Problems of Atomic Science and Technology |
| description |
During this experimental study, samples of double-barrier structures were irradiated with various doses from a ⁶⁰Co source. The current-voltage characteristics of two-barrier structures from a silicon-based nanostructured base and the change in their spectral photocurrent before and after gamma irradiation were recorded and studied. Experimental results show that voltage values such as open-circuit voltage (Voc) as well as short-circuit current (Isc) and efficiency (η) change with the magnitude of the collection-dissipation voltage. |
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Article |
| author |
Madatov, R.S. Abasov, F.P. Asadov, F.G. |
| author_facet |
Madatov, R.S. Abasov, F.P. Asadov, F.G. |
| author_sort |
Madatov, R.S. |
| title |
Control of the electrophysical characteristics of two-barrier silicon structures with a nanostructured base using gamma radiation |
| title_short |
Control of the electrophysical characteristics of two-barrier silicon structures with a nanostructured base using gamma radiation |
| title_full |
Control of the electrophysical characteristics of two-barrier silicon structures with a nanostructured base using gamma radiation |
| title_fullStr |
Control of the electrophysical characteristics of two-barrier silicon structures with a nanostructured base using gamma radiation |
| title_full_unstemmed |
Control of the electrophysical characteristics of two-barrier silicon structures with a nanostructured base using gamma radiation |
| title_sort |
control of the electrophysical characteristics of two-barrier silicon structures with a nanostructured base using gamma radiation |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
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2023 |
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Irradiation installations, diagnostic and research methods |
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https://nasplib.isofts.kiev.ua/handle/123456789/196114 |
| citation_txt |
Control of the electrophysical characteristics of two-barrier silicon structures with a nanostructured base using gamma radiation / R.S. Madatov, F.P. Abasov, F.G. Asadov // Problems of Atomic Science and Technology. — 2023. — № 2. — С. 157-159. — Бібліогр.: 16 назв. — англ. |
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Problems of Atomic Science and Technology |
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ISSN 1562-6016. Problems of Atomic Science and Technology. 2023. №2(144) 157
https://doi.org/10.46813/2023-144-157
CONTROL OF THE ELECTROPHYSICAL CHARACTERISTICS OF
TWO-BARRIER SILICON STRUCTURES WITH A NANOSTRUCTURED
BASE USING GAMMA RADIATION
R.S. Madatov, F.P. Abasov, F.G. Asadov
Institute of Radiation Problems of ANAS, Baku, Azerbaijan
E-mail: fpabasov@mail.ru
During this experimental study, samples of double-barrier structures were irradiated with various doses from a
60Co source. The current-voltage characteristics of two-barrier structures from a silicon-based nanostructured base
and the change in their spectral photocurrent before and after gamma irradiation were recorded and studied.
Experimental results show that voltage values such as open-circuit voltage (VOC) as well as short-circuit current (ISC)
and efficiency (η) change with the magnitude of the collection-dissipation voltage.
PACS: 541.183:539.26; 537.84:621.315.92
INTRODUCTION
Application of semiconductor double-barrier
structures to convert the sun's rays into electrical energy
and the use of clean and free solar energy,
monocrystalline silicon solar cells are still the best
option for solar photovoltaic systems. The photovoltaic
performance of silicon solar cells is affected by
environmental conditions. During operation,
photovoltaic solar cells are exposed to radiation similar
to that encountered when used in satellite systems in
space. Irradiation of photo converting structures with
high-energy particles in the form of gamma quanta,
neutrons, charged particles, etc. e. defect to radiation
changes and defects in the detection of elements and to
a significant degradation of the parameters of samples
of silicon structures [1, 2].
Structure output parameters such as increased
power, efficiency, duty cycle, short circuit current and
no-load voltage are very different from the individual
characteristics of such structural elements as series
resistance, RS, saturation current, I0.
It was found that an increase in each of the bove
structural elements leads to the appearance of output
characteristic properties [3–5]. In the study of radiation
defects at various doses of irradiation in the aggregate,
the presence of the necessary observation of the
degradation of the lifetime of non-main charge carriers.
Deterioration of minority carrier lifetime and attraction
to device properties. is considered an important
indicator of minority carrier life for the silicon structure
of a natural element of heredity in its high degree of
importance, both for short circuit current and open
circuit voltage [6, 7].
1. EXPERIMENTAL METHODS
In this work, four sample structures of silicon solar
cells with improved characteristics are measured, which
are shown in Table. Solar cells were fabricated in a
single-crystal structure using phosphorus diffusion into
a p-type silicon wafer. All samples were irradiated with
a 60Co gamma source with an energy of 1.23 MeV.
Properties of samples of double-barrier structures
(before irradiation)
Material
VOC,
mV
ISC,
mA/cm2
Pmmp,
mW/cm
FF
ɳ,
%
Si 650 42 14 0.72 13.95
The spectral characteristics of the structures under
study were measured in the wavelength range from 400
to 1200 nm using a spectral response measurement
system. Consumption measurements at ambient
temperature using high-precision measuring
instruments.
2. RESULTS AND DISCUSSION
The I–V characteristics of the structures deteriorated
with an increase in the radiation dose. From Fig. 1, you
can get the main parameters of the incoming elements,
such as open circuit voltage (VOC), short circuit current
(ISC), duty cycle (FF) and efficiency (η) [10–13].
On Fig. 1. Current-voltage characteristics of the two-
barrier structure before and after irradiation at different
irradiation doses-discussion under AM1.5 illumination
conditions. The fill factor (FF) parameters for the
structures can be expressed as (1) where Voc and Isc are
open circuit voltage and short circuit current, Vmp and
Imp are voltage and current in power reproduction
respectively. Efficiency (η) of the decision of the
decision element (2) where Pin is the power of the
incident light [14].
Fig. 1 shows the changes in double-barriers structure
silicon parameters as a function of gamma dose. The
parameters are normalized to the values obtained before
samples irradiated. It was found that the degradation of
the solar cell parameters is dependent on the gamma
radiation dose and the irradiation has affected the solar
cell parameters to a certain extent.
There is no substantial variation in the fill factor,
which in some cases showed increased or relatively
steady values. According to the results, the gamma
radiation causes a significant Reduction in the short
circuit current and efficiency while the open circuit
voltage is slightly reduced [14–16].
mailto:fpabasov@mail.ru
158 ISSN 1562-6016. Problems of Atomic Science and Technology. 2023. №2(144)
Fig. 1. The I–V characteristics of double-barriers
structure silicon irradiated with various doses of
gamma radiation
The detail of double-barriers structure parameters
degraded under gamma doses of is shown in Fig. 2.
The decrease in short-circuit current and other
fundamental parameters of double-barrier structures for
ionizing radiation detectors under the action of gamma
radiation is mainly related to the lifetime of minor
charge carriers.
The lifetime of minority carriers in structure crystals
is the average time that minority carriers can spend in an
excited state after the generation of electrons and holes
before they recombine.
Fig. 2. Parameters of the two-barrier structure
in relative unit depending on the dose
of gamma radiation
The lifetime of minority carriers is sensitive to
radiation defects, which mainly act as recombination
points [17, 18].
The lifetime is related to the recombination rate by
the relationship:
τ =
𝛥𝑛
𝑅
,
where τ is the minority carrier lifetime, Δn is the excess
minority carriers concentration and R is the
recombination rate.
Change in the lifetime of minority carriers of silicon
samples of elements before and after gamma irradiation
depending on the manifestation of rice manifestation.
The variation of minority carrier lifetime of silicon
solar cell samples before and after gamma irradiation as
a function of dose is shown in Fig. 3.
Minority carrier diffusion length is a more
applicable parameter for solar cell analysis. With
increasing the gamma radiation dose, the electron-hole
recombination points increases. Therefore the
concentration of minority carrier traps will increase.
Decrease in the minority carrier lifetime reduced the
solar cells electrical properties [10].
Fig. 3. The variation of minority carrier lifetime with
various doses of gamma irradiation
Fig. 4 shows the change in spectral photo current,
I (λ), of silicon solar cell samples under gamma
irradiation. It can be seen that in the whole wavelength
range the highest photo current values belong to the un-
irradiated solar cell and the photo current values
decreased with increasing gamma radiation dose.
According to the results, a significant degradation in
photo current output of samples has been found for
lower wavelengths region and there is no considerable
degradation for higher wavelength range. This means
that the effect of gamma radiation on silicon solar cells
and production defects is greater in region close to the
surface cells. As well as, a solar cell that exposed to
high dose of gamma radiation (20 kGy), radiation
damage and degradation of photo current occurred in
the whole wavelength range [11].
Fig. 4. Photocurrent of silicon double-barrier structures
depending on the hit at different doses
of gamma irradiation
CONCLUSIONS
The deterioration of the characteristics of
photoconverting structures during irradiation was
observed with the appearance of a concentration-
irradiation set (20 kGy). Except for a few cases, the
coverage ratio showed increased or relatively stable
Dose, kGy
ISSN 1562-6016. Problems of Atomic Science and Technology. 2023. №2(144) 159
values, while Voc slightly decreased. The reduction in
short circuit current and other key parameters is mainly
due to the lifetime of minority carriers
The life time of minority charge carriers before
radiation exposure is defects, which mainly appear in
the form of points during recombination, and a decrease
in the time of minority charge carriers. According to the
results of the spectral photocurrent after gamma
irradiation of structures, defects associated with
expression irradiation are revealed, and they appear near
the crystal surface.
As a result of our research, it is possible to confirm
the performance of double-barrier structures at elevated
doses of gamma radiation and are suitable for use in the
manufacture of ionized radiation detectors.
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Article received 23.11.2022
УПРАВЛІННЯ ЕЛЕКТРОФІЗИЧНИМИ ХАРАКТЕРИСТИКАМИ
ДВОБАР'ЄРНИХ КРЕМНІЄВИХ СТРУКТУР З НАНОСТРУКТУРОВАНОЮ ОСНОВОЮ
ЗА ДОПОМОГОЮ ГАММА-ВИПРОМІНЮВАННЯ
Р.С. Мадатов, Ф.П. Абасов, Ф.Г. Асадов
В результаті даного експериментального дослідження зразки двобар'єрних структур опромінювалися
різними дозами від джерела 60Со. Виміряно та досліджено вольт-ампернi характеристики двобар'єрних
структур з наноструктурованою основою на базi кремнію та їх спектральні зміни фотоструму до та після
гамма-опромінення. Експериментальні результати показують, що значення напруги, такі як напруга
холостого ходу (Voc), струм короткого замикання (Isc) та ефективність (η) залежать від величини напруги
накопичення – розряду.
http://dx.doi.org/10.4172/2169-0022.1000269
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