TiO₂-2 radiating damages as a result of the irradiation helium ions with energies of 0.12 and 4 MeV on the linear accelerator
On the linear accelerator of helium ions, the irradiation of TiO₂-2 samples with ions energy of 0.12 and 4 MeV to doses of ≈ 1∙10¹⁸ ion/cm² is executed. The elemental composition of TiO₂-2 samples is made by roentgen-fluorescence method. After irradiation a change of electrophysical characteristics...
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2023
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| Cite this: | TiO₂-2 radiating damages as a result of the irradiation helium ions with energies of 0.12 and 4 MeV on the linear accelerator / V.I. Butenko, A. Cenian, O.F. Dyachenko, O.V. Manuilenko, K.V. Pavlii, M. Sawczak, B.V. Zajtsev, V.I. Zhurba // Problems of Atomic Science and Technology. — 2023. — № 4. — С. 96-104. — Бібліогр.: 24 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860119474336694272 |
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| author | Butenko, V.I. Cenian, A. Dyachenko, O.F. Manuilenko, O.V. Pavlii, K.V. Sawczak, M. Zajtsev, B.V. Zhurba, V.I. |
| author_facet | Butenko, V.I. Cenian, A. Dyachenko, O.F. Manuilenko, O.V. Pavlii, K.V. Sawczak, M. Zajtsev, B.V. Zhurba, V.I. |
| citation_txt | TiO₂-2 radiating damages as a result of the irradiation helium ions with energies of 0.12 and 4 MeV on the linear accelerator / V.I. Butenko, A. Cenian, O.F. Dyachenko, O.V. Manuilenko, K.V. Pavlii, M. Sawczak, B.V. Zajtsev, V.I. Zhurba // Problems of Atomic Science and Technology. — 2023. — № 4. — С. 96-104. — Бібліогр.: 24 назв. — англ. |
| collection | DSpace DC |
| container_title | Problems of Atomic Science and Technology |
| description | On the linear accelerator of helium ions, the irradiation of TiO₂-2 samples with ions energy of 0.12 and 4 MeV to doses of ≈ 1∙10¹⁸ ion/cm² is executed. The elemental composition of TiO₂-2 samples is made by roentgen-fluorescence method. After irradiation a change of electrophysical characteristics is investigated, microscopic researches on electronic and optical microscopes are conducted. Numerical calculations of atom sputtering ratios taking into account of input angles of helium ions in a sample, and also phonons formation, atoms redistribution (segregation), appearance of the vacancies and displacements in TiO₂-2 sample are made. Processes of the flaking formation are investigated, and also presence of the metallization effect and long-range interaction effect in the irradiated samples is shown.
На лінійному прискорювачі іонів гелію виконано опромінення зразків TiO₂-2 з енергією іонів 0,12 і 4 МеВ до доз ≈ 1∙10¹⁸ іон/см². Елементний склад зразків TiO₂-2 отримано рентгенофлюоресцентним методом. Після опромінення проведено мікроскопічні дослідження на електронному та оптичному мікроскопах, досліджено змінення електрофізичних характеристик. Зроблено числові розрахунки коефіцієнтів розпилення атомів з урахуванням кутів входу іонів гелію в зразок, а також утворення фононів, перерозподілу атомів (сегрегація), утворення вакансій і зміщень у зразкa TiO₂-2. Досліджено процеси утворення флекінгу та показано наявність ефектів металізації й далекодії в опромінених зразках.
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| first_indexed | 2025-12-07T17:38:12Z |
| format | Article |
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96 ISSN 1562-6016. Problems of Atomic Science and Technology. 2023. № 4(146)
https://doi.org/10.46813/2023-146-096
TiO2-2 RADIATING DAMAGES AS A RESULT OF THE IRRADIATION
HELIUM IONS WITH ENERGIES OF 0.12 AND 4 MeV ON THE LINEAR
ACCELERATOR
V.I. Butenko
1
, A. Cenian
2
, O.F. Dyachenko
1
, O.V. Manuilenko
1
, K.V. Pavlii
1
,
M. Sawczak
2
, B.V. Zajtsev
1
, V.I. Zhurba
1
1
National Science Center “Kharkov Institute of Physics and Technology”, Kharkiv, Ukraine;
2
Institute of Fluid-Flow Machinery, Polish Academy of Sciences, Gdansk
E-mail: dyachenkoa@kipt.kharkov.ua
On the linear accelerator of helium ions, the irradiation of TiO2-2 samples with ions energy of 0.12 and 4 MeV
to doses of ≈ 1∙10
18
ion/cm
2
is executed. The elemental composition of TiO2-2 samples is made by roentgen-
fluorescence method. After irradiation a change of electrophysical characteristics is investigated, microscopic re-
searches on electronic and optical microscopes are conducted. Numerical calculations of atom sputtering ratios tak-
ing into account of input angles of helium ions in a sample, and also phonons formation, atoms redistribution (seg-
regation), appearance of the vacancies and displacements in TiO2-2 sample are made. Processes of the flaking for-
mation are investigated, and also presence of the metallization effect and long-range interaction effect in the irradi-
ated samples is shown.
PACS: 29.17+w, 29.27 Bd
INTRODUCTION
In nuclear power plants ceramics is used as a ther-
mal protection (Al2O3, SiO2), nuclear fuel (UO2, PuO2),
materials of the regulating units (B4C, Sm2O3), slowing
down and reflecting materials (BeO, ZrO2, Be2C), mate-
rials of the neutron protection (B4C, HfO3, Sm2O3),
electroisolation in an active zone (Al2O3, MgO), fuel
element covers (SiC, Si3N4).
In thermonuclear power ceramics plan to use for
thermal and electric isolation of the first wall of the
plasma chamber (SiC, Si3N4), plasma restrictions (SiC,
Al2O3, B4C), neutron protection (blankets from LiAlO2,
Li2SiO3, Li2O), as a material for windows of the various
frequency plasma heating (Al2O3, BeO) and etc.
Titan dioxide (TiO2) is widely used in the chemical
techniques, instrument making and medicine. Pos-
sessing properties of the semiconductor with
n-conductivity, TiO2 is a perspective material for for-
mation of the solid electrolytes and materials which
possess catalytic properties. Wide use TiO2 as solid
electrolyte is prevented its big resistance (10
13
Ω/cm).
Analysis of TiO2 properties and methods of its syn-
thesis [1] point out the possibilities to change ionic con-
ductivity by introduction in structure TiO2 the oxides
SnO, Co2O3, Sb2O5, AgO which have higher conductivi-
ty. The same effect as it will be resulted below, is
reached by TiO2 helium ions irradiation without addi-
tion of an exterior compounds. On a conductivity
change it’s possible to judge about physical-chemical
processes proceeding in irradiated materials, in particu-
lar. The knowledge of conductivity change dependence
from an irradiation dose and a current density of helium
ions allow to create ionic current gauges, to control pro-
cess of materials processing in extreme conditions and
etc.
The odd researches spent on semiconductors [2, 3]
or separate metals and alloys [2, 4 - 7] are devoted the
description of an impacts of continuous and pulse elec-
tronic and ionic beams on a surface change of the irradi-
ated materials. The numerous publications analysis has
shown that at processing by ionic beams of solids for
the purpose of their modification the ionic beams with
energy from a hundred kiloelectronvolts to several me-
gaelectronvolts are applied. Beams of easy ions (pro-
tons, helium, carbon, nitrogen, boron, oxygen, their
mixture and combination) have appeared the most ef-
fective as, on the one hand, in comparison with heavy
ions it’s easier to receive, and, on the other hand, they
have essentially big runs in a target. Ionic beams are
capable to create in near-surface layers of materials the
ultra-fast heating and superhigh-speed cooling
(∆T/∆t~10
8
…10
11
К/s). The temperatures gradient thus
on a surface and in near-surface target layers can make
10
9
К/m. It leads to changes of a structure and proper-
ties of processed materials. At impact of ionic beams on
a solids surface the defining factors influencing of a
surface morphology and on a dynamics of structurally-
phase transformations, occurring in a surface layers, are
spatio-temporal distribution of an energy release power:
density of the brought energy, action time, heating,
melting, evaporation, ablation, thermal stress and shock
wave.
The surface defines many properties of solids. So,
for example, electric properties of semiconductors and
dielectrics depend on composition and structure of a
surface layer and define the wear resistance and corro-
sion resistance, an endurance limit, the heat resistance,
etc. At processing of the dielectrics and semiconductors
surface by ionic beams the morphological changes and
modifications of its element composition take place.
In this work an irradiation parameters of TiO2-2
samples on the linear accelerator of helium ions and
methods of their measurement are described. Primary
radiating characteristics and atom sputtering ratios are
calculated. Experimental results of electrophysical
properties TiO2-2 are received and presence of metalli-
zation effect and long-range action effect in the irradiat-
ed samples is shown.
ISSN 1562-6016. Problems of Atomic Science and Technology. 2023. № 4(146) 97
1. SOURCE AND PARAMETERS
OF THE IRRADIATION, THE SAMPLE
CHARACTERISTICS
In NSC KIPT the linear accelerator of helium ions
(Не
+
) with energy of 0.12…4 MeV [8 - 10] works.
Basic elements of the linear accelerator of helium ions
are: injector, resonator with the accelerating structure,
placed in a vacuum casing, and system of a beam for-
mation and transport from output of the accelerating
section to the irradiation chamber with accompanying
diagnostic devices for carrying out of experimental
works.
Feature of the interdigital accelerating structure of
the section linear accelerator of helium ions is use of the
alternating-phase focusing variant with step-by-step
change of a synchronous phase and accruing amplitude
of a RF field in accelerating gaps on a grouping area of
the accelerating-focusing path. New effective induct-
ance-capacitor adjusting devices (‘сontrivances’) for
this section in a form of rods located on a side of drift
tubes, opposite to their suspension brackets are devel-
oped [10 - 13].
For an irradiation and studying of constructional ma-
terial characteristics on the accelerator the special
chamber and system of the experimental parameters
measurement [14, 15] are created. Vacuum in the cham-
ber is carried out with the help of the fore vacuum and
turbo-molecular pumps, it provides without the oxygen
environment in the chamber volume and the same vacu-
um as in accelerating structure. A temperature of irradi-
ated samples is set by the heating element located di-
rectly in the irradiation chamber and measured by the
thermocouple attached to the sample backside. The digi-
tal oscillograph ZET-302 and DAC/ADC ZET-210 for
registration of irradiated sample parameters which are
connected to the computer with the further data record-
ing and their processing are used.
For change (increase/decrease) of the beam current
density falling on a sample and shortening of an irradia-
tion time, in front of the irradiation chamber the focus-
ing triplet which allows changing beam radius, and,
hence, a current density depending on requirements of
an experiment is established [16]. A system of the beam
formation and transport from accelerating section output
to the irradiation chamber is shown in Fig. 1. Photos in
absence of a current in triplet quadrupole lenses and at a
currents selection are shown in Figs. 2, 3. The chosen
focusing system has allowed increasing density of a
beam helium ions current in several times (to 7).
Currents of ions beam are measured by means of the
induction contactless flying gauges established on an
input and output from a triplet, and also directly ahead
of the irradiated sample [17].
Table 1
Irradiation parameters
Parameter Value
Beam energy, MeV 0.12…4
Pulse current, µА 1100…300
Pulse length, µs 500
Repetition rate, imp./s 2…5
Sample temperature, °С up to 900
Basic parameters of helium ions beam at an irradia-
tion of samples on the linear accelerator are resulted in
Table 1. Diameter of helium ions beam made ~15 mm,
it corresponds to TiO2-2 irradiated samples.
TiO2-2 samples (diameter is 19.6 mm, thickness is
1.00 mm and weight is 1.0459 g) have been chosen for
an irradiation. The samples elemental composition was
defined by X-ray fluorescent method which is based on
dependence of X-ray fluorescence intensity on the ele-
ment concentration in a sample. Impurities composition
in TiO2-2 sample (a basic element – 95.096%) in per-
cent is following: Si-2.325, S-0.222, Cl-0.262, Ca-
0.067, V-0.895, Fe-0.936, Ni-0.016, Cu-0.055, Zr-
0.007, Nb-0.010, Mo-0.009, Pb-0.013, Sn-0.023,
I-0.065. TiO2-2 sample surface and its appearance are
shown in Fig. 4.
Fig. 1. System of the beam formation and transport from
accelerating section output to the irradiation chamber
Fig. 2. Accelerated beam visualization in absence
of a current in triplet quadrupole lenses
Fig. 3. Accelerated beam visualization at currents
selection in quadrupole lenses (spot diameter of ~1 cm)
Fig. 4. TiO2-2 sample surface and appearance
98 ISSN 1562-6016. Problems of Atomic Science and Technology. 2023. № 4(146)
The conducted microscopic research of samples sur-
face has not shown their roughness in limits of ± 0.1 Å.
2. IONIZATION, SEGREGATION,
FORMATION PHONONS, VACANCIES
AND DAMAGEABILITY
For calculation of the ions range in solids the SRIM
software package [18, 19] was used which allows to
receive following information about: vacancies distribu-
tion in a target; redistribution of irradiated material at-
oms (segregation); sputtering ratios; phenomena con-
nected with ions energy loss; distribution of ionization
and phonons formation. These are ‘primary’ characteris-
tics which define processes dissociation, radiating diffu-
sion of the sample elements, distribution of elastic
waves and etc.
Calculations in the SRIM program taking into ac-
count of the displacement cascades were spent. Energy
losses going on the ionization, phonons formation and
damageability by a beam of helium ions and the dis-
placement cascades for irradiation energies of 0.12 and
4 MeV are resulted in Table 2.
Table 2
Calculated characteristics of the samples
Energy,
MeV
Energy loss, %
Ionization Phonons Damageability
Не
+
/cascade Не
+
/cascade Не
+
/cascade
TiO2
0.12 93.7/1.10 0.78/4.15 0.08/0.20
4 99.68/0.07 0.04/0.20 0.00/0.01
TiO2-2
0.12 93.85/1.00 0.77/4.12 0.08/0.18
4 99.69/0.06 0.04/0.20 0.00/0.01
Energy absolute values for TiO2 and TiO2-2, going
on these processes are resulted in Table 3. Energy val-
ues for pure TiO2 and TiO2-2 are almost identical. It
means that in certain cases it’s possible to use calcula-
tions nonmetering of additives in TiO2-2.
Table 3
Energy values going on the ionization, phonons for-
mation and damageability
Energy,
МeV
Energy, keV/ion
Ionization Phonons Damageability
TiO2
0.12 113.7 5.9 0.34
4 3990.0 9.6 0.51
TiO2-2
0.12 113.8 5.9 0.31
4 3990.0 9.5 0.50
As appears from Tables 2, 3 a most part of a beam
energy goes on the ionization. The basic contribution to
phonons formation and damageability occurs at the ex-
pense of displacement cascades. On phonons formation
at beam energies of 0.12 and 4 MeV it’s spent at 17-
19 times more energy, than for damageability. Hence,
the role of phonons and ionization in some radiating
effects can be defined. The profiles of ionization, pho-
nons formation, segregation and helium occurrence,
vacancies formation in TiO2-2 at energies 0.12 and
4 MeV, accordingly, are resulted in Figs. 5, 6, in rela-
tive units.
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
-1.0
-0.5
0.0
0.5
1.0
R
el
at
iv
e
u
n
it
s
L, mm
Ionization
Phonon
Range
Vacancy
TiO2-2
E = 0.12 MeV
Fig. 5. Profiles of the ionization, segregation, phonons
formation and vacancies in TiO2-2, Е = 0.12 MeV
0 2 4 6 8 10 12 14 16 18
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
R
el
at
iv
e
u
n
it
s
L, mm
Ionization
Phonons
Vacancy
Range
TiO2-2
E=4 MeV
Fig. 6. Profiles of the ionization, segregation, phonons
formation and vacancies in TiO2-2, Е = 4 MeV
As segregation atoms play a dominant role in change
of the thermalphysic and electrophysical characteristics
of ceramic materials, relations of TiO2-2 redistributed
atoms to helium atoms are presented in Table 4.
Table 4
Relations of TiO2-2 redistributed atoms to helium atoms
Е = 0.12 МeV
O/He Ti/He Si/He S/He Cl/He
64.44 42.85 1.68 0.096 0.113
Ca/He V/He Fe/He Cu/He
0.030 0.380 0.408 0.023
Е = 4 МeV
O/He Ti/He Si/He S/He Cl/He
99.90 69.13 2.67 0.152 0.181
Ca/He V/He Fe/He Cu/He
0.048 0.614 0.661 0.039
Other elements bring the insignificant contribution
to the segregation process.
Vacancies formation and quantity of displacement
on an ion in TiO2-2 samples play a dominant role in
damageability calculations (dpa – quantity of displace-
ments per atom). This data has been received at pro-
cessing of calculations in the SRIM program.
For damageability calculation (dpa) and damageabil-
ity distribution profile the curves of Figs. 5, 6 Vacancies
and an expression, given lower, were used:
,ion ion
m A mole
D dpi D dpi
dpa
N N m
ISSN 1562-6016. Problems of Atomic Science and Technology. 2023. № 4(146) 99
where
ionD
is a radiation dose [ion/cm
2
] (an experi-
mental parameter), dpi
is a quantity of displacements
per ion (from SRIM calculations),
AN
is the Avogadro
number,
mole
m
m
M
,
0m SL , where
0
is the
sample measured density, S 1 cm
2
is the sample unit
area, L is the maximum ions range in a sample,
1
100
i i
i
M nm
is the sample molar mass,
im
is the
molecular weight of i-th element sample,
in is percent-
age i-th element of a sample. Final expression for calcu-
lation of displacements per atom (dpa) looks like:
0
1
.
100
ion
i i
iA
D dpi
dpa n
N SL
m
.
Damageability (dpa) for Е = 0.12 MeV has made
≈ 49 displacements/atom, for Е = 4 MeV has made
≈ 5.0 displacements/atom (for irradiation doses of
10
18
ion/cm
2
). The calculated damageability (dpa) pro-
files for TiO2-2 samples at helium ions energies of 0.12
and 4 MeV are resulted in Figs. 7, 8.
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
10
20
30
40
50
60
70
80
90
100
110
d
p
a
L, mm
TiO2-2
E= 0.12 MeV
Fig. 7. Profile of the displacements formation in TiO2-2
sample at helium ions irradiation with E = 0.12 MeV
0 2 4 6 8 10 12 14 16 18
0
1
2
3
4
d
p
a
L, mm
TiO2-2
E = 4 MeV
Fig. 8. Profile of the displacements formation in TiO2-2
sample at helium ions irradiation with E = 4 MeV
As follows from the spent calculations the phonons
formation occurs in areas of ionization, segregation and
vacancies formation; ionization occurs basically before
phonons formation, segregation and vacancies for-
mation. Since samples at irradiation are earthed and
electrons mobility more than in 5000 times more ions
mobility the ionization area will be positively charged.
Hence, the accelerated ions irradiation leads to for-
mation of a considerable quantity of radiating defects in
a thin surface layer of a substance and causes change of
the chemical composition of this layer as at the expense
of ions penetration (an ion-implantation doping), and at
the expense of change of the chemical elements concen-
tration which are a part of targets (if they consist of two
or more components). Formation of radiating defects
and chemical composition change stimulate passing of
secondary processes [7], such as formation of new crys-
tal phases, amorphous layers, micro voids and etc.
From the spent calculations follows that energy ex-
pended for the ionization in samples volume is equal
≈ 94% for 0.12 MeV and 99.7% for 4 MeV and occurs
mainly at the expense of helium ions. Formation of va-
cancies and phonons take place mainly at the expense of
displacement cascades. As a segregation occurs mainly
after ionization process and electrons mobility is a min-
imum in 5·10
3
times above ions mobility, there is a po-
larization of the redistributed atoms in a sample volume
with their following acceleration. This process changes
electrophysical, thermalphysic and other characteristics
of irradiated samples. Phonons formation at samples
irradiation create an additional excitation collective
mode, it results as in change of some characteristics of
irradiated samples. All these effects as it will be shown
below, lead to blistering and flaking formation both on
an irradiated surface, and on the back (not irradiated)
side of samples.
3. SPUTTERING RATIOS
For calculations of sputtering ratios also the SRIM
program has been used which with adequate accuracy
considering the displacement cascades, counts sputter-
ing ratios of the all atoms of TiO2-2 ceramics structure.
Since for sputtering the cascades which come back to a
target surface are important for a sputtering calculation
the small surface layer of a sample is enough to use. The
necessary thickness of samples for calculations was
estimated at start some fast examples and, having
looked on what depth efficiency of a sputtering remains
to a constant, this value selected. For cascades in a tar-
get at very low energy which is a sputtering major fac-
tor, the SRIM a hard-sphere model for scattering uses.
For definition of an optimum quantity of helium ions at
calculation of atoms sputtering of TiO2-2 samples the
calculations in the SRIM program are made at doses to
9∙10
6
particles. The sufficient number of helium ions for
calculations in the SRIM program makes ≈ (3…5)∙10
6
for energies 0.12 and 4 MeV. The scheme of calcula-
tions in the SRIM program is presented in Fig. 9 (with
indication of an entry angle of helium ions beam in a
sample).
Fig. 9. Scheme for calculations in the SRIM program
In the beginning calculations for TiO2-2 have been
carried out at α = 0°. Change of a total sputtering ratio
on a sample depth for energy of helium ions beam of
100 ISSN 1562-6016. Problems of Atomic Science and Technology. 2023. № 4(146)
4 MeV is shown in Fig. 10. The same calculations have
been made for Е = 0.12 MeV.
0 10 20 30 40 50 60 70 80 90 100
0
5
10
15
20
25
30
35
E = 4 MeV
k
,
1
0
-5
a
to
m
/i
o
n
L, Ang.
TiO2-2
Fig. 10. Change of a total sputtering ratio on TiO2-2
sample depth for energy of helium ions beam of 4 MeV
Change of sputtering ratios O and Ti, basic ele-
ments, is resulted in Fig. 11. The contribution to a total
sputtering ratio of TiO2-2 other elements is less 1%.
0 10 20 30 40 50 60 70 80 90 100
0
5
10
15
20
25
k
,
1
0
-5
a
to
m
/i
o
n
L, Ang.
O
Ti
TiO2-2
E = 4 MeV
Fig. 11. Change of sputtering ratios O and Ti on TiO2-2
sample depth for energy of helium ions beam of 4 MeV
Sputtering occurs when the cascade of displacement
atoms gives to a target atom the energy exceeding the
surface binding energy (≈ 3.5 еV). That there would be
a sputtering, the atom energy directed perpendicularly to
a sample surface should be above surface energy.
Hence, for sputtering only displacement cascades which
come back to a target surface are important.
For helium ions energy of 0.12 and 4 MeV, at α = 0°,
total sputtering ratios are following:
k ≈ 83·10
–5
atom/ion, E = 0.12 MeV;
k ≈ 0.1·10
–5
atom/ion, E = 4 MeV.
However, in process of a dose set a sample the target
becomes rough, efficiency of a sputtering will increase,
as each surface atom is connected with a surface smaller
electron quantity. Calculation of a sputtering at α = 0°
does not include effects of a roughness change which
changes in time irradiation. At change of a surface bind-
ing energy, a sputtering efficiency will increase no more
than in 2 times regardless of a fact that occurs with irra-
diated surface.
At TiO2-2 irradiation on the linear accelerator of he-
lium ions with energies of 0.12 and 4 MeV a surface
change occurs, at the expense of a blistering and flaking
formation, and as a result of structure atoms of samples
sputtering also. So, after TiO2-2 irradiation the surface
micrographs have been made. A surface structure of
TiO2-2 irradiated sample is resulted in Fig. 12.
After irradiated sample micrographs processing the
dependence of a roughness along of TiO2-2 surface has
been received (Fig. 13).
Fig. 12. TiO2-2 surface structure. Е = 0.12 MeV,
an irradiation dose was ≈ 1.2∙10
18
ion/cm
2
0 10 20 30 40 50
0
1
2
3
4
5
h
,
A
n
g
.
L, mm
Fig. 13. Dependence of a roughness of TiO2-2
irradiated sample on a length of its surface. Е =
0.12 MeV, an irradiation dose was ≈ 1.2∙10
18
ion/cm
2
From the resulted data (see Figs. 12, 13) it’s visible
that a surface is non-uniform, have a developed relief,
the hollows maximum depth is no more than 5 Å. And
with relief change of samples surface at an irradiation
the entry angle of helium ions changes and the sputter-
ing ratio of TiO2-2 elements can change. At calculations
in the SRIM program these facts have been considered
by means of ions entry angle change in irradiated sam-
ples and the hollows maximum depth.
In Table 5 values of TiO2-2 sputtering ratios are re-
sulted at entry angles of helium ions beam of 0…90°
and the maximum value of the hollows depth of 5 Å.
Table 5
TiO2-2 total sputtering ratios at E = 0.12 МeV
and E = 4 МeV
k·10
–2
atom/ion, E = 0.12 МeV
α° 0 6 12 18 24 30 36 42
k 1.9 1.92 1.93 2.25 2.26 2.24 2.23 2.20
α° 48 54 60 66 72 78 84 89
k 2.18 2.42 2.39 2.63 3.15 3.88 6.01 29.2
k·10
–5
atom/ion, E = 4 МeV
α° 0 6 12 18 24 30 36 42
k 82.7 82.9 82.0 98.2 99.7 98.2 97.2 95.1
α° 48 54 60 66 72 78 84 89
k 92.7 103 102 111 137 165 255 1183
The dependences of the total sputtering ratios
change on an entry angle of helium ions beams taking
into account the hollows maximum depth of 5 Å and ion
range of 100 Å are resulted in Figs. 14, 15.
ISSN 1562-6016. Problems of Atomic Science and Technology. 2023. № 4(146) 101
The range of sputtering ratios changes at α = 0…90°
has made:
E = 0.12 MeV, k = (1.9…29.2)∙10
–2
atom/ion;
E = 4 MeV, k = (83…1183)∙10
–5
atom/ion.
Average values of total sputtering ratios, disregard-
ing extreme values, that is at α = 0° and α = 90°, are
following:
E = 0.12 MeV, k = 2.6·10
–2
atom/ion;
E = 4 MeV, k = 114·10
–5
atom/ion.
Since at calculations the maximum hollows depth
was used the averaging sputtering ratios on hollows
depth is received:
E = 0.12 MeV, k = 1.3·10
–2
atom/ion;
E = 4 MeV, k = 57·10
–5
atom/ion.
We consider that it’s the greatest possible sputtering
ratios at E = 0.12 and E = 4 MeV.
0 10 20 30 40 50 60 70 80
2
3
4
5
6
k
,
1
0
-2
a
to
m
/i
o
n
α, degree
TiO2-2
EHe+ = 0.12 MeV
Fig. 14. Dependence of a total sputtering ratio on an
entry angle of helium ions with E=0.12 МeV
in TiO2-2 sample
0 10 20 30 40 50 60 70 80
80
100
120
140
160
180
200
220
240
260
k
,
1
0
-5
a
to
m
/i
o
n
α, degree
TiO2-2
EHe+ = 4 MeV
Fig. 15. Dependence of a total sputtering ratio on an
entry angle of helium ions with E = 4 МeV
in TiO2-2 sample
4. EFFECTS OF TiO2-2 METALLIZATION
AND LONG-RANGE INTERACTION,
ELECTROPHYSICAL CHARACTERISTICS
AND SWELLING
We develop such experimental techniques of re-
searches: microscopic, measurements of electrophysical
characteristics and frictional parameters of ceramic ma-
terials, ultrasonic researches.
The technique of ceramic materials researches is fol-
lowing. After set a sample of an irradiation certain dose
the microscopic researches are conducted which allow
to study the blistering and flaking formations and their
change dynamics from an irradiation dose and tempera-
ture, dimensional stability (swelling, sintering), grains
size changes, to investigate a surface roughness and to
study influence of dusting processes of various materi-
als at an irradiation on the blistering and flaking dynam-
ics.
For finding-out of a metallization effect formation in
irradiated samples TiO2-2 irradiation on the linear ac-
celerator of helium ions with energy of 0.12 MeV has
been made. The irradiation dose has made
~1.2∙10
18
ion/cm
2
, a temperature was ≈ 60°С. The ob-
served effect of a surface metallization of TiO2-2 sam-
ple irradiated surface is shown in Fig. 16.
The surface linear profile in the metallization area of
TiO2-2 irradiated sample in a red spectrum is shown in
Fig. 17.
Fig. 16. Metallization surface of the irradiated sample
0 1 2 3 4 5 6 7 8 9 10 11
160
170
180
190
200
210
220
230
240
250
260
In
te
n
si
ty
,
re
la
ti
v
e
u
n
it
s
L, mm
Red spectrum
Metallization area
Fig. 17. Spectrum of TiO2-2 surface in the metallization
field after irradiation by helium ions with Е = 0.12 MeV
It’s possible to explain metallization effect TiO2 dis-
sociation with the subsequent of titan and oxygen diffu-
sion to a sample surface. At an irradiation of TiO2-2
sample by helium ions with energy of 4 MeV a surface
metallization was not revealed. As the segregation of
TiO2-2 elements at energy of 4 MeV is maximum on
depth of 14…18 mm (see Fig. 6), and at Е = 0.12 MeV a
segregation maximum is located on a depth
0.1…1.1 mm (see Fig. 5) for revealing of a surface met-
allization, it’s necessary to increase an irradiation dose
and an irradiation to spend at more high temperature.
Under existing conditions of an irradiation
(Е = 4 MeV), it’s necessary to expect that owing to TiO2
dissociation in an irradiated sample volume the electro-
physical characteristics will change.
After samples irradiation by helium ions a certain
dose with energy of 4 MeV the surface electroresistanc-
es of a front side and a back side of samples, the volume
electroresistance were measured, the microscopic re-
searches on optical and electronic microscopes were
conducted. After measurements there was a further irra-
diation of these samples with subsequent measurements.
Surfaces of the front side (irradiated) and the back side
(not irradiated) of TiO2-2 sample are resulted in Figs.
18, 19. A dose of an irradiation was ~1.2∙10
18
ion/cm
2
, a
temperature was ≈ 60°С.
102 ISSN 1562-6016. Problems of Atomic Science and Technology. 2023. № 4(146)
From the photos made on optical and electronic mi-
croscopes, it’s visible that the surface is non-uniform,
has the developed relief on which concentric traces from
an ionic beam and craters, splashes of a sample material
and metallization area with small grains are looked.
Fig. 18. Front side of TiO2-2 irradiated sample
(Е = 4 MeV)
Fig. 19. Back side of TiO2-2 irradiated sample
(Е = 4 MeV)
The flaking formation both on the front side and on
the back side of a sample is clearly visible. The blister-
ing formation on the front side and the back side of the
irradiated samples is not observed. The flaking filling
ratios k=S/S0, where S is a surface area of a sample,
flaking occupied; S0 is the irradiated front side or back
side of a sample have been calculated. Dependences of
the flaking filling ratios from an irradiation dose are
shown in Fig. 20.
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.0
0.1
0.2
0.3
0.4
0.5
face side of the sample
reverse side of the sample
17 2D 10 , ion / cm
k
TiO2-2
Fig. 20. Dependences of the flaking filling ratios from
an irradiation dose of the front side and the back side
of TiO2-2 sample
From Fig. 20 follows that at an irradiation dose of
~1∙10
17
ion/cm
2
, the surface areas values of a flaking
formation practically coincide. However, the flaking
depth on the front side of a sample is approximately
twice more than on the back side. More careful re-
search, further, will be given this point in a question.
After each irradiation gathered dose the surface and
volume electroresistances have been measured. These
dependences on an irradiation dose are resulted in
Figs. 21, 22, accordingly. Initial values of the surface
and volume electroresistances of not irradiated samples
are indicated on figures.
From the mentioned results follows that electrore-
sistance change, both on the front side and on the back
side of TiO2-2 sample, occurs owing to basic elements
dissociation. It’s necessary to notice that after each irra-
diation session the exposure of samples was made. Then
the surface and volume electroresistances were meas-
ured. Partial restoration of the electroresistance no more
than 5% has been registered.
From the mentioned results on measurements of the
flaking change and electroresistance follows that there
is an effect of the long-range interaction. To experi-
mental and theoretical researches of this effect are de-
voted numerous works [20 - 24]. However, for today
there is no unambiguous mechanism explaining this
effect. In our opinion, it’s possible to explain effect of
the long-range interaction by complex action on a sam-
ple surface, namely, generation of thermoelastic ten-
sions and shock waves, at the expense of the formation
and distribution phonons and stimulating diffusion of
impurities, as on interstices, and to borders of grains.
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
5
10
15
200
220
240
260
280
300
320
340
R
S
u
rf
ac
e
(M
Ω
/c
m
)
D∙1018, ion/cm2
front side
backside
TiO2-2
E= 4 MeV
Fig. 21. Dependences of TiO2-2 surface electrore-
sistance on an irradiation dose. Initial value was
20 GΩ/сm (on the front and back sides of a sample)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
500
1000
1500
2000
2500
3000
3500
4000
R
V
o
lu
m
e
(M
Ω
/c
m
3
)
D∙1018, ion/cm2
TiO2-2
E= 4 MeV
Fig. 22. Dependence of TiO2-2 volume electroresistance
on an irradiation dose.
Initial value was 50 GΩ/cm
3
Fig. 23. Front surface of TiO2-2 sample
ISSN 1562-6016. Problems of Atomic Science and Technology. 2023. № 4(146) 103
As at TiO2-2 irradiation at a dose of ~1∙10
18
ion/cm
2
a swelling of a sample material was revealed. The photo
of a sample front surface is resulted in Fig. 23. The
sample right part is not irradiated surface; left part is the
irradiated surface.
Analysis has shown that a swelling value is order of
1 mm, at an irradiation dose of ~1∙10
18
ion/сm
2
. A swell-
ing is connected with diffusion of gaseous elements
(Не, О) to a surface at the expense of internal bubbles
formation and grains growth.
CONCLUSIONS
On the linear accelerator the irradiation of TiO2-2
samples by helium ions with energies of 0.12 and
4 MeV is spent. For these energies the ionization pro-
files, formation of vacancies and phonons, redistribution
of sample atoms and damageability are calculated. Also
sputtering ratios taking into account change of a surface
samples profile are calculated.
At Е = 0.12 MeV more than 94% of energy goes on
the ionization, an order of 5% on the phonons formation
and less than 0.3% on a damageability. For Е = 4 MeV,
more than 99.7% of energy goes on the ionization, an
order of 0.2% on the phonons formation and less than
0.02% on a damageability. Therefore, damageability for
Е = 0.12 MeV makes 49 displacements/atom, for
Е = 4 MeV is 5.0 displacements/atom.
Taking into account the displacement cascades the
sputtering ratios of all atoms of TiO2-2 ceramics struc-
ture have been calculated. Nonmetering of samples pro-
file change, for energy of helium ions of 0.12 and
4 MeV, at an entry angle in samples α = 0°, the total
sputtering ratios are following: k ≈ 83·10
–5
atom/ion,
E = 0.12 MeV; k ≈ 0.1·10
–5
atom/ion, E = 4 MeV. Tak-
ing into account change of samples profile for the entry
angles of 0…90° the average sputtering ratios have
made: E = 0.12 MeV, k = 1.3·10
–2
atom/ion;
E = 4 MeV, k = 57·10
–5
atom/ion.
After TiO2-2 irradiation the microscopic researches
of the front side (irradiated) and the back side (not irra-
diated) of a sample have been conducted. The metalliza-
tion effect on the front side of a sample (E = 0.12 MeV)
which is possible to explain for the account TiO2 disso-
ciation with the subsequent diffusion of the titan to a
sample surface is revealed. At E = 4 MeV the metalliza-
tion effect was not found. This results from the fact that
the segregation of TiO2-2 elements at energy of 4 MeV
is located on a depth of 14…18 mm, and at
Е = 0.12 MeV the segregation profile is located on a
depth of 0.1…1.1 mm. For revealing of surface metalli-
zation it’s necessary to increase an irradiation dose and
an irradiation to spend at more high temperature.
Also at TiO2-2 irradiation at an irradiation dose of
~1∙10
18
ion/cm
2
swelling of a sample material was re-
vealed which is connected with diffusion of gaseous
elements (Не, О) to a surface at the expense of internal
bubbles formation and grains growth.
An effect of the long-range interaction is defined by
change (reduction) of the surface electroresistance both
on the front side of a sample, and on the back side. Also
the volume electroresistance decreases at increase of an
irradiation dose. Besides, on both sides the flaking for-
mation is observed. And, the flaking areas on the front
side and back side of a sample increase with increase of
an irradiation dose. It’s possible to explain reduction of
the surface and volume electroresistances TiO2 dissocia-
tion. That is in all volume of an irradiated sample there
is a metal (Ti), only it leads to electroresistance reduc-
tion. But there is a question, whence takes energy on the
back side of a sample for the formation flaking and TiO2
dissociation? TiO2 binding energy an order of
12…15 eV, a thickness of a sample is ≈ 1 mm, and the
helium ions range and primary processes formation area
are no more than 18.5 mm. In our opinion, it’s possible
to explain a complex influence. First, the phonon excit-
ed propagation with additional frequency mode for-
mation from helium ions beam. This energy has enough
for TiO2 dissociation and tensions formation on the back
side of a sample. Secondly, in a sample ionization area
the positive charge accumulates, under Coulomb field
action there is a polarization of the segregation atoms
and structure molecules. This energy has enough for
acceleration of segregation atoms and structure mole-
cules with formation of the cyclic primary processes.
The essential role at the flaking formation is played by
oxygen and helium diffusion. With increase of an irra-
diation dose appear diffused channels for oxygen and
helium directly in the areas of the flaking formation
(Fig. 24).
Fig. 24. Flaking formation with diffused channels
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Article received 28.05.2023
РАДІАЦІЙНІ ПОШКОДЖЕННЯ TiO2-2 У РЕЗУЛЬТАТІ ОПРОМІНЕННЯ НА ЛІНІЙНОМУ
ПРИСКОРЮВАЧІ ІОНАМИ ГЕЛІЮ З ЕНЕРГІЯМИ 0.12 І 4 МeВ
B.І. Бутенко, A. Cenian, О.Ф. Дьяченко, О.В. Мануйленко,
К.В. Павлій, M. Sawczak, Б.B. Зайцев, В.І. Журба
На лінійному прискорювачі іонів гелію виконано опромінення зразків TiO2-2 з енергією іонів 0,12 і
4 МеВ до доз ≈ 1∙10
18
іон/см
2
. Елементний склад зразків TiO2-2 отримано рентгенофлюоресцентним мето-
дом. Після опромінення проведено мікроскопічні дослідження на електронному та оптичному мікроскопах,
досліджено змінення електрофізичних характеристик. Зроблено числові розрахунки коефіцієнтів розпилен-
ня атомів з урахуванням кутів входу іонів гелію в зразок, а також утворення фононів, перерозподілу атомів
(сегрегація), утворення вакансій і зміщень у зразкa TiO2-2. Досліджено процеси утворення флекінгу та пока-
зано наявність ефектів металізації й далекодії в опромінених зразках.
http://www.srim.org/
|
| id | nasplib_isofts_kiev_ua-123456789-196183 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-12-07T17:38:12Z |
| publishDate | 2023 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Butenko, V.I. Cenian, A. Dyachenko, O.F. Manuilenko, O.V. Pavlii, K.V. Sawczak, M. Zajtsev, B.V. Zhurba, V.I. 2023-12-11T11:57:26Z 2023-12-11T11:57:26Z 2023 TiO₂-2 radiating damages as a result of the irradiation helium ions with energies of 0.12 and 4 MeV on the linear accelerator / V.I. Butenko, A. Cenian, O.F. Dyachenko, O.V. Manuilenko, K.V. Pavlii, M. Sawczak, B.V. Zajtsev, V.I. Zhurba // Problems of Atomic Science and Technology. — 2023. — № 4. — С. 96-104. — Бібліогр.: 24 назв. — англ. 1562-6016 PACS: 29.17+w, 29.27 Bd DOI: https://doi.org/10.46813/2023-146-096 https://nasplib.isofts.kiev.ua/handle/123456789/196183 On the linear accelerator of helium ions, the irradiation of TiO₂-2 samples with ions energy of 0.12 and 4 MeV to doses of ≈ 1∙10¹⁸ ion/cm² is executed. The elemental composition of TiO₂-2 samples is made by roentgen-fluorescence method. After irradiation a change of electrophysical characteristics is investigated, microscopic researches on electronic and optical microscopes are conducted. Numerical calculations of atom sputtering ratios taking into account of input angles of helium ions in a sample, and also phonons formation, atoms redistribution (segregation), appearance of the vacancies and displacements in TiO₂-2 sample are made. Processes of the flaking formation are investigated, and also presence of the metallization effect and long-range interaction effect in the irradiated samples is shown. На лінійному прискорювачі іонів гелію виконано опромінення зразків TiO₂-2 з енергією іонів 0,12 і 4 МеВ до доз ≈ 1∙10¹⁸ іон/см². Елементний склад зразків TiO₂-2 отримано рентгенофлюоресцентним методом. Після опромінення проведено мікроскопічні дослідження на електронному та оптичному мікроскопах, досліджено змінення електрофізичних характеристик. Зроблено числові розрахунки коефіцієнтів розпилення атомів з урахуванням кутів входу іонів гелію в зразок, а також утворення фононів, перерозподілу атомів (сегрегація), утворення вакансій і зміщень у зразкa TiO₂-2. Досліджено процеси утворення флекінгу та показано наявність ефектів металізації й далекодії в опромінених зразках. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Problems of Atomic Science and Technology Ion beam dynamics TiO₂-2 radiating damages as a result of the irradiation helium ions with energies of 0.12 and 4 MeV on the linear accelerator Радіаційні пошкодження TiO₂-2 у результаті опромінення на лінійному прискорювачі іонами гелію з енергіями 0.12 і 4 МeВ Article published earlier |
| spellingShingle | TiO₂-2 radiating damages as a result of the irradiation helium ions with energies of 0.12 and 4 MeV on the linear accelerator Butenko, V.I. Cenian, A. Dyachenko, O.F. Manuilenko, O.V. Pavlii, K.V. Sawczak, M. Zajtsev, B.V. Zhurba, V.I. Ion beam dynamics |
| title | TiO₂-2 radiating damages as a result of the irradiation helium ions with energies of 0.12 and 4 MeV on the linear accelerator |
| title_alt | Радіаційні пошкодження TiO₂-2 у результаті опромінення на лінійному прискорювачі іонами гелію з енергіями 0.12 і 4 МeВ |
| title_full | TiO₂-2 radiating damages as a result of the irradiation helium ions with energies of 0.12 and 4 MeV on the linear accelerator |
| title_fullStr | TiO₂-2 radiating damages as a result of the irradiation helium ions with energies of 0.12 and 4 MeV on the linear accelerator |
| title_full_unstemmed | TiO₂-2 radiating damages as a result of the irradiation helium ions with energies of 0.12 and 4 MeV on the linear accelerator |
| title_short | TiO₂-2 radiating damages as a result of the irradiation helium ions with energies of 0.12 and 4 MeV on the linear accelerator |
| title_sort | tio₂-2 radiating damages as a result of the irradiation helium ions with energies of 0.12 and 4 mev on the linear accelerator |
| topic | Ion beam dynamics |
| topic_facet | Ion beam dynamics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/196183 |
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