Influence of Mn doping on ZnO defect-related emission

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• Hauptverfasser: Stara, T.R., Markevich, I.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214902
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of Mn doping on ZnO defect-related emission / T.R. Stara, I.V. Markevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 137-141. — Бібліогр.: 27 назв. — англ.

Defect-related emission in undoped and doped with manganese ZnO ceramics was investigated. Mn concentration Nᴹⁿ was varied from 10¹⁹ to 10²¹ cm⁻³. The samples were sintered for 3 hours in air at 1100 °C. The color of ZnO:Mn ceramics changed from yellow to reddish-brown with increasing Mn content. Photoluminescence (PL) spectra of the prepared samples were measured at room temperature and analyzed by Gaussian fitting. PL of undoped ceramics exhibited itself as an intense broad band peaking at about 550 nm. Two effects were shown to occur as a result of Mn doping: i) drastic quenching of self-activated PL accompanied by a gradual red-shift of the spectral boundary of the quenching with increasing the Mn content; ii) appearance of a new emission band peaking at 645 nm that becomes dominant in the PL spectrum at Nᴹⁿ = 10²⁰ cm⁻³. The observed effects were believed to be due to reabsorption of self-activated ZnO emission by Mn-related centers. The following recombination in excited centers was supposed to occur by both radiative and nonradiative ways, the former being responsible for the 645 nm PL band.