Influence of Mn doping on ZnO defect-related emission

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2017
• Main Authors: Stara, T.R., Markevich, I.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/214902
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Influence of Mn doping on ZnO defect-related emission / T.R. Stara, I.V. Markevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 137-141. — Бібліогр.: 27 назв. — англ.

Defect-related emission in undoped and doped with manganese ZnO ceramics was investigated. Mn concentration Nᴹⁿ was varied from 10¹⁹ to 10²¹ cm⁻³. The samples were sintered for 3 hours in air at 1100 °C. The color of ZnO:Mn ceramics changed from yellow to reddish-brown with increasing Mn content. Ph...