Gaidar, G., & Baranskii, P. (2017). Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago Style (17th ed.) CitationGaidar, G.P, and P.I Baranskii. "Dependence of the Anisotropy Parameter of Drag Thermo-emf on the Impurity Concentration in the N-type Germanium and Silicon Crystals." Semiconductor Physics Quantum Electronics & Optoelectronics 2017.
MLA (8th ed.) CitationGaidar, G.P, and P.I Baranskii. "Dependence of the Anisotropy Parameter of Drag Thermo-emf on the Impurity Concentration in the N-type Germanium and Silicon Crystals." Semiconductor Physics Quantum Electronics & Optoelectronics, 2017.
Warning: These citations may not always be 100% accurate.