Gaidar, G., & Baranskii, P. (2017). Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Gaidar, G.P, und P.I Baranskii. "Dependence of the Anisotropy Parameter of Drag Thermo-emf on the Impurity Concentration in the N-type Germanium and Silicon Crystals." Semiconductor Physics Quantum Electronics & Optoelectronics 2017.
MLA-Zitierstil (8. Ausg.)Gaidar, G.P, und P.I Baranskii. "Dependence of the Anisotropy Parameter of Drag Thermo-emf on the Impurity Concentration in the N-type Germanium and Silicon Crystals." Semiconductor Physics Quantum Electronics & Optoelectronics, 2017.
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