Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2017
• Автори: Gaidar, G.P., Baranskii, P.I.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/214903
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals / G.P. Gaidar, P.I. Baranskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 123-128. — Бібліогр.: 24 назв. — англ.

Features of the concentration dependences of the anisotropy parameter of thermo-emf of electron-phonon drag M in germanium and silicon crystals of n-type conductivity were found in a wide range of charge carrier concentrations. Insensitivity of the anisotropy parameter M to the presence of impurities in the germanium crystals up to the concentrations of ∼ 10¹⁵ cm⁻³ was found, whereas in silicon, with increasing the doping level, the monotonic decrease in this parameter was observed. The significantly lower absolute values of the parameter M were obtained for the silicon crystals as compared with the corresponding values of this parameter for the germanium ones. The physical nature of the identified effects was explained.