Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals
Features of the concentration dependences of the anisotropy parameter of thermo-emf of electron-phonon drag M in germanium and silicon crystals of n-type conductivity were found in a wide range of charge carrier concentrations. Insensitivity of the anisotropy parameter M to the presence of impuritie...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2017 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/214903 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals / G.P. Gaidar, P.I. Baranskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 123-128. — Бібліогр.: 24 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862645561123930112 |
|---|---|
| author | Gaidar, G.P. Baranskii, P.I. |
| author_facet | Gaidar, G.P. Baranskii, P.I. |
| citation_txt | Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals / G.P. Gaidar, P.I. Baranskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 123-128. — Бібліогр.: 24 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Features of the concentration dependences of the anisotropy parameter of thermo-emf of electron-phonon drag M in germanium and silicon crystals of n-type conductivity were found in a wide range of charge carrier concentrations. Insensitivity of the anisotropy parameter M to the presence of impurities in the germanium crystals up to the concentrations of ∼ 10¹⁵ cm⁻³ was found, whereas in silicon, with increasing the doping level, the monotonic decrease in this parameter was observed. The significantly lower absolute values of the parameter M were obtained for the silicon crystals as compared with the corresponding values of this parameter for the germanium ones. The physical nature of the identified effects was explained.
|
| first_indexed | 2026-03-21T13:44:12Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-214903 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T13:44:12Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gaidar, G.P. Baranskii, P.I. 2026-03-03T11:02:20Z 2017 Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals / G.P. Gaidar, P.I. Baranskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 123-128. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS: 61.82.Fk https://nasplib.isofts.kiev.ua/handle/123456789/214903 https://doi.org/10.15407/spqeo20.01.123 Features of the concentration dependences of the anisotropy parameter of thermo-emf of electron-phonon drag M in germanium and silicon crystals of n-type conductivity were found in a wide range of charge carrier concentrations. Insensitivity of the anisotropy parameter M to the presence of impurities in the germanium crystals up to the concentrations of ∼ 10¹⁵ cm⁻³ was found, whereas in silicon, with increasing the doping level, the monotonic decrease in this parameter was observed. The significantly lower absolute values of the parameter M were obtained for the silicon crystals as compared with the corresponding values of this parameter for the germanium ones. The physical nature of the identified effects was explained. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals Article published earlier |
| spellingShingle | Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals Gaidar, G.P. Baranskii, P.I. |
| title | Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals |
| title_full | Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals |
| title_fullStr | Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals |
| title_full_unstemmed | Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals |
| title_short | Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals |
| title_sort | dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214903 |
| work_keys_str_mv | AT gaidargp dependenceoftheanisotropyparameterofdragthermoemfontheimpurityconcentrationinthentypegermaniumandsiliconcrystals AT baranskiipi dependenceoftheanisotropyparameterofdragthermoemfontheimpurityconcentrationinthentypegermaniumandsiliconcrystals |