Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2017
• Автори: Mustafaeva, S.N., Jafarova, S.G., Kerimova, E.M., Gasanov, N.Z., Asadov, S.M.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/214909
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties / S.N. Mustafaeva, S.G. Jafarova, E.M. Kerimova, N.Z. Gasanov, S.M. Asadov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 74-78. — Бібліогр.: 11 назв. — англ.

The single crystals of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ (х = 0…0.5) solid solutions have been grown. The photoelectric, X-ray dosimetric, dielectric, and optical characteristics of the (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions with various compositions have been determined. The maximum and spectral range of photosensitivity were found to redshift as x increases from 0 to 0.5. Both the photo- and X-ray sensitivity of these solid solutions are higher than those of pure TlGaS₂. The nature of dielectric losses and the hopping mechanism of charge transport in the (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions have been established from the experimental results on high-frequency dielectric measurements. The temperature dependences of exciton peak position for various compositions (x = 0…0.3) have been investigated within 77…180 K temperature interval. It has been ascertained that, with increasing x in (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions, the width of their forbidden gap decreases.