Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties
The single crystals of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ (х = 0…0.5) solid solutions have been grown. The photoelectric, X-ray dosimetric, dielectric, and optical characteristics of the (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions with various compositions have been determined. The maximum and spectral range of photos...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2017 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/214909 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties / S.N. Mustafaeva, S.G. Jafarova, E.M. Kerimova, N.Z. Gasanov, S.M. Asadov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 74-78. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862601847209984000 |
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| author | Mustafaeva, S.N. Jafarova, S.G. Kerimova, E.M. Gasanov, N.Z. Asadov, S.M. |
| author_facet | Mustafaeva, S.N. Jafarova, S.G. Kerimova, E.M. Gasanov, N.Z. Asadov, S.M. |
| citation_txt | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties / S.N. Mustafaeva, S.G. Jafarova, E.M. Kerimova, N.Z. Gasanov, S.M. Asadov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 74-78. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The single crystals of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ (х = 0…0.5) solid solutions have been grown. The photoelectric, X-ray dosimetric, dielectric, and optical characteristics of the (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions with various compositions have been determined. The maximum and spectral range of photosensitivity were found to redshift as x increases from 0 to 0.5. Both the photo- and X-ray sensitivity of these solid solutions are higher than those of pure TlGaS₂. The nature of dielectric losses and the hopping mechanism of charge transport in the (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions have been established from the experimental results on high-frequency dielectric measurements. The temperature dependences of exciton peak position for various compositions (x = 0…0.3) have been investigated within 77…180 K temperature interval. It has been ascertained that, with increasing x in (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions, the width of their forbidden gap decreases.
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| first_indexed | 2026-03-21T12:40:24Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-214909 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T12:40:24Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| spelling | Mustafaeva, S.N. Jafarova, S.G. Kerimova, E.M. Gasanov, N.Z. Asadov, S.M. 2026-03-03T11:06:20Z 2017 Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties / S.N. Mustafaeva, S.G. Jafarova, E.M. Kerimova, N.Z. Gasanov, S.M. Asadov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 74-78. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 71.20.Nr, 71.35.Cc, 72.15.Rn, 72.20.Ee, 72.20.Jv, 72.30.+q, 72.40.+w, 73.20.At https://nasplib.isofts.kiev.ua/handle/123456789/214909 https://doi.org/10.15407/spqeo20.01.074 The single crystals of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ (х = 0…0.5) solid solutions have been grown. The photoelectric, X-ray dosimetric, dielectric, and optical characteristics of the (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions with various compositions have been determined. The maximum and spectral range of photosensitivity were found to redshift as x increases from 0 to 0.5. Both the photo- and X-ray sensitivity of these solid solutions are higher than those of pure TlGaS₂. The nature of dielectric losses and the hopping mechanism of charge transport in the (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions have been established from the experimental results on high-frequency dielectric measurements. The temperature dependences of exciton peak position for various compositions (x = 0…0.3) have been investigated within 77…180 K temperature interval. It has been ascertained that, with increasing x in (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions, the width of their forbidden gap decreases. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties Article published earlier |
| spellingShingle | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties Mustafaeva, S.N. Jafarova, S.G. Kerimova, E.M. Gasanov, N.Z. Asadov, S.M. |
| title | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties |
| title_full | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties |
| title_fullStr | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties |
| title_full_unstemmed | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties |
| title_short | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties |
| title_sort | influence of the composition of (tlgas₂)₁₋ₓ(tlinse₂)ₓ solid solutions on their physical properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214909 |
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