Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties
The single crystals of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ (х = 0…0.5) solid solutions have been grown. The photoelectric, X-ray dosimetric, dielectric, and optical characteristics of the (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions with various compositions have been determined. The maximum and spectral range of photos...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Cite this: | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties / S.N. Mustafaeva, S.G. Jafarova, E.M. Kerimova, N.Z. Gasanov, S.M. Asadov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 74-78. — Бібліогр.: 11 назв. — англ. |
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| author | Mustafaeva, S.N. Jafarova, S.G. Kerimova, E.M. Gasanov, N.Z. Asadov, S.M. |
| author_facet | Mustafaeva, S.N. Jafarova, S.G. Kerimova, E.M. Gasanov, N.Z. Asadov, S.M. |
| citation_txt | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties / S.N. Mustafaeva, S.G. Jafarova, E.M. Kerimova, N.Z. Gasanov, S.M. Asadov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 74-78. — Бібліогр.: 11 назв. — англ. |
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| description | The single crystals of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ (х = 0…0.5) solid solutions have been grown. The photoelectric, X-ray dosimetric, dielectric, and optical characteristics of the (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions with various compositions have been determined. The maximum and spectral range of photosensitivity were found to redshift as x increases from 0 to 0.5. Both the photo- and X-ray sensitivity of these solid solutions are higher than those of pure TlGaS₂. The nature of dielectric losses and the hopping mechanism of charge transport in the (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions have been established from the experimental results on high-frequency dielectric measurements. The temperature dependences of exciton peak position for various compositions (x = 0…0.3) have been investigated within 77…180 K temperature interval. It has been ascertained that, with increasing x in (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions, the width of their forbidden gap decreases.
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| first_indexed | 2026-03-21T12:40:24Z |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 1. P. 74-78.
doi: https://doi.org/10.15407/spqeo20.01.074
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
74
PACS 71.20.Nr, 71.35.Cc, 72.15.Rn, 72.20.Ee, 72.20.Jv, 72.30.+q, 72.40.+w, 73.20.At
Influence of the composition of (TlGaS2)1–х(TlInSe2)x solid solutions
on their physical properties
S.N. Mustafaeva, S.G. Jafarova, E.M. Kerimova, N.Z. Gasanov, S.M. Asadov
Institute of Physics, National Academy of Sciences of Azerbaijan
AZ–1143, G. Javid Pr., 131, Baku, Azerbaijan
Tel.: (99412) 539-59-13; Fax: (99412) 539-59-61
E-mail: solmust@gmail.com
Abstract. The single crystals of (TlGaS2)1–х(TlInSe2)х (х = 0…0.5) solid solutions have
been grown up. The photoelectric, X-ray dosimetric, dielectric and optical characteristics
of the (TlGaS2)1-х(TlInSe2)х solid solutions with various compositions have been
determined. The maximum and spectral range of photosensitivity were found to redshift
as x increases from 0 to 0.5. Both the photo- and X-ray sensitivity of these solid solutions
are higher than those of pure TlGaS2. The nature of dielectric losses and the hopping
mechanism of charge transport in the (TlGaS2)1–х(TlInSe2)х solid solutions have been
established from the experimental results on high-frequency dielectric measurements.
The temperature dependences of exciton peak position for various compositions (x =
0…0.3) have been investigated within 77…180 K temperature interval. It has been
ascertained that, with increasing x in (TlGaS2)1–х(TlInSe2)х solid solutions, the width of
their forbidden gap decreases.
Keywords: solid solutions, photosensitivity, dielectric losses, exciton peak, X-ray
dosimetry.
Manuscript received 30.11.16; revised version received 16.01.17; accepted for
publication 01.03.17; published online 05.04.17.
1. Introduction
Ternary layer-chain TlGaS2 and TlInSe2 single crystals
exhibit high photo- and X-ray sensitivity making them
well-suited for photoresistors and X-ray detectors [1-4].
The study of physical properties of the TlGaS2, TlInSe2
compounds and solid solutions on their base are very
important for ascertaining the relations between their
compositions and properties. This offers the possibility
of controlling the band gap, energy position of emission
bands and electrical conductivity of these
semiconductors. In [5-7] the results of investigations of
ac electric and dielectric properties of TlGaS2, TlInSe2
and diluted (TlGaS2)1–х(TlInSe2)х solid solutions (x =
0.005 and 0.02) are given.
The purpose of this work was to investigate the
influence of (TlGaS2)1–х(TlInSe2)х solid solutions
compositions (x = 0…0.5) on their photo- and X-ray
sensitivity, ac electric, dielectric and optical properties.
2. Experimental
The synthesis of (TlGaS2)1–х(TlInSe2)х solid solutions
was carried out in ampoules evacuated to the pressure
10–3 Pa. The ampoule was fabricated from a fused silica
tube. In this case, (TlGaS2)1–х(TlInSe2)х samples were
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 1. P. 74-78.
doi: https://doi.org/10.15407/spqeo20.01.074
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
75
Table 1. Crystal data for TlGaS2 and (TlGaS2)1–х(TlInSe2)х.
Solid solution composition а(Å) b(Å) c(Å) β Z Space
group
TlGaS2 10.40 10.40 15.17 100.06° 16 P21/n
(TlGaS2)0.9(TlInSe2)0.1 10.40 10.40 15.18 100.06° 16 P21/n
(TlGaS2)0.8(TlInSe2)0.2 10.41 10.41 15.18 100.06° 16 P21/n
(TlGaS2)0.7(TlInSe2)0.3 10.43 10.43 15.181 100.06° 16 P21/n
(TlGaS2)0.6(TlInSe2)0.4 10.435 10.435 15.20 100.06° 16 P21/n
(TlGaS2)0.5(TlInSe2)0.5 10.452 10.452 15.245 100.06° 16 P21/n
prepared due to interaction of initial components
(TlGaS2 and TlInSe2). To prevent the ampoule filled
with reactants from explosion, the furnace temperature
was raised to the melting temperature of selenium (T =
493 K), and the ampoule was held at this temperature for
3 h. Then, the furnace temperature was raised up to T =
1080 K at the rate close to 50 K/h, and the ampoule was
kept at this temperature for 4 h, after which it was cooled
down to 300 K at the rate 20 K/h. Phase purity of
(TlGaS2)1–х(TlInSe2)х was determined using the
differential thermal analysis and powder X-ray
diffraction. Each sample was used as the charge for
Bridgman crystal growth. The crystal data for
(TlGaS2)1–х(TlInSe2)х are presented in Table 1.
The spectral characteristics of photoresponse were
recorded with a GIBI-TIBI potentiometer; the samples
being illuminated with a 400-W incandescent lamp
through the DMR-4 monochromator.
In X-ray dosimetry measurements, we used a URS-
55 X-ray generator. Variation of the sample resistance
under X-ray irradiation was followed with the R-4053
bridge. X-ray dose rates were measured with a DRGZ-
02 dosimeter.
Measurements of the dielectric properties of
(TlGaS2)1–х(TlInSe2)х (x = 0.1, 0.2) single crystals were
performed at fixed frequencies within the range
5⋅104…3.4⋅107 Hz by the resonant method using TESLA
BM560 Q-meter. The monocrystalline samples for
dielectric measurements had the form of planar
capacitors normal to the C-axis of the crystals, with
silver paste electrodes. The thickness of the crystal
samples was 90 to 120 µm, and the area of the capacitor
plates was 8⋅10–2…2·10–1 cm2. All dielectric
measurements were performed at the temperature T =
300 K. The accuracy in determining the resonance
capacitance and the quality factor Q = 1/tanδ of the
measuring circuit was limited by errors related to
resolution of the device readings. The accuracy of the
capacitor graduation was ±0.1 pF. The reproducibility of
the resonance position was ±0.2 pF in capacitance and
±(1.0…1.5) scale divisions in quality factor. The largest
deviations were 3-4% in ε and 7% in tanδ.
Optical absorption spectra were measured using the
samples in the form of platelets 10–100 µm thick
cleaved from the monocrystalline ingots. Light was
incident along the normal to the layers of the samples,
that is, along the crystallographic axis C of the crystals.
Optical transmission spectra were measured as functions
of temperature using the experimental setup built around
a KSVU-6M system and UTREKS helium cryostat,
which ensured temperature stabilization with the
accuracy ±0.01 K. The setup included the MDR-6
double monochromator and FEU-100 photomultiplier
tube. The spectral resolution of the experimental
configuration was equal to 2 Å.
3. Results and discussion
We measured spectral dependences of photoconductivity
and photosensitivity Rd /Rph (Rd is the dark resistance,
and Rph is the resistance of the sample under above-gap
illumination) at a steady illumination, as well as the X-
ray sensitivity and other photoelectric parameters.
Table 2 and Fig. 1 give the photoelectric properties of
the (TlGaS2)1–х(TlInSe2)х solid solutions.
Fig. 1. Composition dependence of the photosensitivity maxi-
mum in (TlGaS2)1–х(TlInSe2)х solid solutions.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 1. P. 74-78.
doi: https://doi.org/10.15407/spqeo20.01.074
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
76
Table 2. Photoelectric and X-ray dosimetric characteristics of the (TlGaS2)1–х(TlInSe2)х solid solutions.
Solid solution composition
∆λmax,
µm
Rd,
Ohm
Rd /Rph
at 200 lx
Kσ,
min/R
TlGaS2 0.46–0.57 (3…5)⋅1010 5–8 0.063–0.159
(TlGaS2)0.9(TlInSe2)0.1 0.50–0.62 (1…2)⋅1010 10–25 0.075–0.178
(TlGaS2)0.8(TlInSe2)0.2 0.55–0.66 (3…4)⋅109 15–30 0.089–0.198
(TlGaS2)0.7(TlInSe2)0.3 0.59–0.71 (2…3)⋅108 21–37 0.098–0.213
(TlGaS2)0.6(TlInSe2)0.4 0.64–0.76 (1…2)⋅107 23–42 0.107–0.219
(TlGaS2)0.5(TlInSe2)0.5 0.69–0.81 (3…5)⋅106 25–46 0.142–0.252
From Fig. 1, one can see that the photosensitivity
maximum (λmax) linearly shifts from 0.50 to 0.73 µm
when x increases from 0 to 0.5. This shift is associated
with a decrease in the band gap with increasing x. This
increase leads to a redshift of the sensitivity range ∆λ
and a considerable rise in Rd /Rph ratio under 200-lx
illumination. For example, Rd /Rph of
(TlGaS2)0.5(TlInSe2)0.5 is 5 to 6 times higher than that of
pure TlGaS2 (Table 2). The rise in Rd /Rph with
increasing x is apparently related with an increase in
both the lifetime and mobility of the photogenerated
carriers.
Roengenosensitivity Kσ of (TlGaS2)1–х(TlInSe2)х
was characterized by the relative change in conductivity
per unit dose rate,
E
K E
⋅σ
σΔ
=σ
0
0, , (1)
where σ0 is the conductivity of the unirradiated crystal
and ∆σE,0 = σE - σ0 is the change in the conductivity
under X-ray irradiation with the dose rate E (R/min).
Table 2 lists Kσ values corresponding to the accelerating
voltages from 25 to 30 keV and dose rates from 0.75 to
10 R/min. One can see that Kσ of (TlGaS2)1–х(TlInSe2)х
solid solutions exceeds that of pure TlGaS2. As the
TlInSe2 content increases, Kσ rises up to
0.142…0.252 min/R at x = 0.5.
We measured also the electric capacitance of
(TlGaS2)0.9(TlInSe2)0.1 and (TlGaS2)0.8(TlInSe2)0.2
samples within the frequency range 5⋅104…3.4⋅107 Hz.
Using the measured capacitances of these samples, we
calculated the permittivity ε at different frequencies. The
ε values of (TlGaS2)1–х(TlInSe2)х single crystals vary
from 9.5 to 12.7 for x = 0.1 and from 9.8 to 11.6 for
x = 0.2 over the entire frequency range studied, with no
significant dispersion (ε of TlGaS2 single crystal, as it
was shown in [5], varies from 26 to 30 at f =
5⋅104…3⋅107 Hz).
In contrast to that reported for TlGaS2 in [5], the
frequency dependences of the loss tangent for the
(TlGaS2)1–х(TlInSe2)х (x = 0.1, 0.2) single crystals have
maxima, which are indicative of relaxation losses [8].
The ac conductivity of investigated samples varies
as f 0.8 at f = 5⋅104…2⋅106 Hz for x = 0.1 and at f =
5⋅104…6⋅106 Hz for x = 0.2. At higher frequencies, σac(f)
– dependence of these crystals was superlinear (~f 1.4).
The σac ~ f 0.8 dependence indicates that the
mechanism of charge transport is hopping over localized
states near the Fermi level [9].
4
52
F
2
3
ln
96
)( ⎥
⎦
⎤
⎢
⎣
⎡ ν
⋅
π
=σ
f
faNTkef ph
ac , (2)
where e is the elementary charge, k – Boltzmann
constant, NF – density of localized states near the Fermi
level, a = 1/α – localization length, α – decay parameter
of the wave function of a localized charge carrier,
ψ ~ e–αr, and νph – phonon frequency.
Using the expression (2), we can calculate the
density of states at the Fermi level from the measured
values of the conductivity σac(f). The calculated values
of NF for (TlGaS2)1–х(TlInSe2)х solid solutions (x = 0.1,
0.2) single crystals were given in Table 3 (localization
radius is chosen as 14 Å, by analogy with the TlGaS2
single crystal [5]).
According to the theory of hopping conduction, we
calculated the mean hop distance (R) and mean hop time
(τ) in an applied ac electric field using the formula [9]:
( )α−ν=τ− Rph 2exp1 , (3)
where R is the average hopping distance,
f
R phν
α
= ln
2
1
. (4)
These values are also adduced in Table 3.
Knowing NF and R from [9]:
1
23
4
F
3 =
Δ
⋅
π ENR , (5)
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 1. P. 74-78.
doi: https://doi.org/10.15407/spqeo20.01.074
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
77
we estimated scattering of energies inherent to trap states
near the Fermi level (ΔE): ΔE = 0.075 eV for x = 0.1 and
0.085 eV for x = 0.2. The evaluated concentrations of
deep traps determining the ac conductivity of (TlGaS2)1–
х(TlInSe2)х single crystals (Nt = NF⋅ΔE) are given in the
last column of Table 3. It is seen from this table that,
with increase of x from 0 to 0.2 in (TlGaS2)1–х(TlInSe2)х
single crystals, the values of NF and Nt increase, while R
decreases.
Optical properties of (TlGaS2)1–х(TlInSe2)х
(x = 0…0.3) single crystals were studied in 77 to 180 K
temperature interval. The thicknesses of crystals under
study were 20–50 µm. Light was incident on the crystals
in direction parallel to their crystallographic axis C.
The obtained data on the optical properties of the
(TlGaS2)1–х(TlInSe2)х demonstrate that, at temperatures
from 77 to 180 K, crystals have the absorption band near
fundamental absorption edge, which is due to transitions
into the direct exciton state. We examined the
temperature dependence for the energy position of the
exciton peak for (TlGaS2)1–х(TlInSe2)х crystals within
the temperature range 77…180 K (Fig. 2). It is seen that
the peak position of the exciton band of (TlGaS2)1–
х(TlInSe2)х solid solutions has a positive temperature
coefficient. Since the exciton energy is a weak function
of temperature, it indicates that the band gap of
(TlGaS2)1–х(TlInSe2)х crystals increases with
temperature.
Table 3. Parameters of (TlGaS2)1–х(TlInSe2)х single crystals
obtained from high-frequency dielectric measurements.
Crystal composition NF,
eV–1⋅cm–3 τ, s R,
Å Nt, cm–3
TlGaS2 2.1⋅1018 2⋅10–6 103 4.2⋅1017
(TlGaS2)0.9(TlInSe2)0.1 6.8⋅1018 9.8⋅10–7 98 5.1⋅1017
(TlGaS2)0.8(TlInSe2)0.2 7.7⋅1018 3.3⋅10–7 90 6.5⋅1017
Fig. 2. Temperature dependences of the energy position of the
exciton peak at the absorption edge of (TlGaS2)1–х(TlInSe2)х
solid solutions: x = 0 (1), 0.02 (2), 0.1 (3), 0.2 (4), 0.3 (5).
Temperature variation of the band gap in
semiconductors Eg is known to be defined by a
combined effect of thermal expansion of their lattice and
electron-phonon interaction. Semiconductors rarely have
a positive temperature coefficient of their band gap. In
particular, such an experimental fact in TlGaS2 and
TlGaS2-based single crystals [10, 11] is thought to be
caused by significant contribution of thermal expansion
of their lattice to the temperature variation of Eg. Thus,
the TlGaS2 and (TlGaS2)1–х(TlInSe2)х crystals are found
to be similar in the structure of their absorption edge
formed by direct interband transitions.
4, Conclusions
The results of photoelectric, X-ray dosimetric and high-
frequency dielectric measurements with prepared
(TlGaS2)1–х(TlInSe2)х solid solutions provided an
opportunity to increase photo- and X-ray sensitivity, to
determine the mechanism of dielectric losses and charge
transport, as well as to evaluate the density of localized
states at the Fermi level, the average time of charge
carrier hopping between localized states, average
hopping distance, scattering of trap states near the Fermi
level and concentration of deep traps responsible for ac
conductivity. The temperature dependences of exciton
peak position for (TlGaS2)1–х(TlInSe2)х solid solutions
were investigated within the temperature interval
77…180 K. It has been ascertained that the edge of
optical absorption in these solid solutions is formed by
vertical exciton transitions with the positive temperature
coefficient.
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© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
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| id | nasplib_isofts_kiev_ua-123456789-214909 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T12:40:24Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Mustafaeva, S.N. Jafarova, S.G. Kerimova, E.M. Gasanov, N.Z. Asadov, S.M. 2026-03-03T11:06:20Z 2017 Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties / S.N. Mustafaeva, S.G. Jafarova, E.M. Kerimova, N.Z. Gasanov, S.M. Asadov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 74-78. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 71.20.Nr, 71.35.Cc, 72.15.Rn, 72.20.Ee, 72.20.Jv, 72.30.+q, 72.40.+w, 73.20.At https://nasplib.isofts.kiev.ua/handle/123456789/214909 https://doi.org/10.15407/spqeo20.01.074 The single crystals of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ (х = 0…0.5) solid solutions have been grown. The photoelectric, X-ray dosimetric, dielectric, and optical characteristics of the (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions with various compositions have been determined. The maximum and spectral range of photosensitivity were found to redshift as x increases from 0 to 0.5. Both the photo- and X-ray sensitivity of these solid solutions are higher than those of pure TlGaS₂. The nature of dielectric losses and the hopping mechanism of charge transport in the (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions have been established from the experimental results on high-frequency dielectric measurements. The temperature dependences of exciton peak position for various compositions (x = 0…0.3) have been investigated within 77…180 K temperature interval. It has been ascertained that, with increasing x in (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions, the width of their forbidden gap decreases. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties Article published earlier |
| spellingShingle | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties Mustafaeva, S.N. Jafarova, S.G. Kerimova, E.M. Gasanov, N.Z. Asadov, S.M. |
| title | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties |
| title_full | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties |
| title_fullStr | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties |
| title_full_unstemmed | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties |
| title_short | Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties |
| title_sort | influence of the composition of (tlgas₂)₁₋ₓ(tlinse₂)ₓ solid solutions on their physical properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214909 |
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