Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2017
• Main Authors: Mustafaeva, S.N., Jafarova, S.G., Kerimova, E.M., Gasanov, N.Z., Asadov, S.M.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/214909
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Influence of the composition of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions on their physical properties / S.N. Mustafaeva, S.G. Jafarova, E.M. Kerimova, N.Z. Gasanov, S.M. Asadov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 74-78. — Бібліогр.: 11 назв. — англ.

The single crystals of (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ (х = 0…0.5) solid solutions have been grown. The photoelectric, X-ray dosimetric, dielectric, and optical characteristics of the (TlGaS₂)₁₋ₓ(TlInSe₂)ₓ solid solutions with various compositions have been determined. The maximum and spectral range of photos...