Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films
The paper focuses on an experimental study of the photovoltage time decay in an ITO-Ge-Si heterojunction with a Ge nanostructured thin film. Kinetics under 650 nm excitation within the temperature range 80 to 290 K are successfully described by a single exponential function with temperature-dependen...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2017 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/214921 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films / S.A. Iliash, Yu.V. Hyrka, S.V. Kondratenko, V.S. Lysenko, Yu.M. Kozyrev, V.V. Lendel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 259-261. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The paper focuses on an experimental study of the photovoltage time decay in an ITO-Ge-Si heterojunction with a Ge nanostructured thin film. Kinetics under 650 nm excitation within the temperature range 80 to 290 K are successfully described by a single exponential function with temperature-dependent decay constants. Photovoltage relaxation is modeled taking into account the hopping nature of electron transport in the band of localized states.
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| ISSN: | 1560-8034 |