Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films
The paper focuses on an experimental study of the photovoltage time decay in an ITO-Ge-Si heterojunction with a Ge nanostructured thin film. Kinetics under 650 nm excitation within the temperature range 80 to 290 K are successfully described by a single exponential function with temperature-dependen...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2017 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/214921 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films / S.A. Iliash, Yu.V. Hyrka, S.V. Kondratenko, V.S. Lysenko, Yu.M. Kozyrev, V.V. Lendel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 259-261. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862720426508025856 |
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| author | Iliash, S.A. Hyrka, Yu.V. Kondratenko, S.V. Lysenko, V.S. Kozyrev, Yu.M. Lendel, V.V. |
| author_facet | Iliash, S.A. Hyrka, Yu.V. Kondratenko, S.V. Lysenko, V.S. Kozyrev, Yu.M. Lendel, V.V. |
| citation_txt | Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films / S.A. Iliash, Yu.V. Hyrka, S.V. Kondratenko, V.S. Lysenko, Yu.M. Kozyrev, V.V. Lendel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 259-261. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The paper focuses on an experimental study of the photovoltage time decay in an ITO-Ge-Si heterojunction with a Ge nanostructured thin film. Kinetics under 650 nm excitation within the temperature range 80 to 290 K are successfully described by a single exponential function with temperature-dependent decay constants. Photovoltage relaxation is modeled taking into account the hopping nature of electron transport in the band of localized states.
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| first_indexed | 2026-03-21T02:22:28Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-214921 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T02:22:28Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Iliash, S.A. Hyrka, Yu.V. Kondratenko, S.V. Lysenko, V.S. Kozyrev, Yu.M. Lendel, V.V. 2026-03-04T12:47:44Z 2017 Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films / S.A. Iliash, Yu.V. Hyrka, S.V. Kondratenko, V.S. Lysenko, Yu.M. Kozyrev, V.V. Lendel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 259-261. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 73.40.-c, 73.50.Pz https://nasplib.isofts.kiev.ua/handle/123456789/214921 https://doi.org/10.15407/spqeo20.02.259 The paper focuses on an experimental study of the photovoltage time decay in an ITO-Ge-Si heterojunction with a Ge nanostructured thin film. Kinetics under 650 nm excitation within the temperature range 80 to 290 K are successfully described by a single exponential function with temperature-dependent decay constants. Photovoltage relaxation is modeled taking into account the hopping nature of electron transport in the band of localized states. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films Article published earlier |
| spellingShingle | Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films Iliash, S.A. Hyrka, Yu.V. Kondratenko, S.V. Lysenko, V.S. Kozyrev, Yu.M. Lendel, V.V. |
| title | Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films |
| title_full | Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films |
| title_fullStr | Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films |
| title_full_unstemmed | Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films |
| title_short | Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films |
| title_sort | relaxation of photovoltage in ito-ge-si heterojunction with ge nanostructured thin films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214921 |
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