Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films
The paper focuses on an experimental study of the photovoltage time decay in an ITO-Ge-Si heterojunction with a Ge nanostructured thin film. Kinetics under 650 nm excitation within the temperature range 80 to 290 K are successfully described by a single exponential function with temperature-dependen...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2017 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/214921 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films / S.A. Iliash, Yu.V. Hyrka, S.V. Kondratenko, V.S. Lysenko, Yu.M. Kozyrev, V.V. Lendel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 259-261. — Бібліогр.: 6 назв. — англ. |