High-frequency electromagnetic radiation of germanium crystals in magnetic fields
The cyclotron radiation of plasma of thermal carriers of germanium crystals, which is not in the state of thermodynamic equilibrium with the semiconductor, has been experimentally confirmed.
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2017 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Цитувати: | High-frequency electromagnetic radiation of germanium crystals in magnetic fields / G.V. Milenin, V.V. Milenin, R.A. Redko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 231-234. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860279383554523136 |
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| author | Milenin, G.V. Milenin, V.V. Redko, R.A. |
| author_facet | Milenin, G.V. Milenin, V.V. Redko, R.A. |
| citation_txt | High-frequency electromagnetic radiation of germanium crystals in magnetic fields / G.V. Milenin, V.V. Milenin, R.A. Redko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 231-234. — Бібліогр.: 9 назв. — англ. |
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| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The cyclotron radiation of plasma of thermal carriers of germanium crystals, which is not in the state of thermodynamic equilibrium with the semiconductor, has been experimentally confirmed.
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| first_indexed | 2026-03-21T13:44:29Z |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 231-234.
doi: https://doi.org/10.15407/spqeo20.02.231
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
231
PACS 72.30.+q, 73.50.Mx, 76.40.+b
High-frequency electromagnetic radiation of germanium crystals
in magnetic fields
G.V. Milenin, V.V. Milenin, R.A. Redko
V. Lashkaryov Institute of Semiconductor Physics,
NAS of Ukraine,
41, prospect Nauky, 03680 Kyiv, Ukraine;
e-mail: milenin.gv@gmail.com
Abstract. The cyclotron radiation of plasma of thermal carriers of germanium crystals,
which is not in the state of thermodynamic equilibrium with semiconductor, has been
experimentally confirmed.
Keywords: cyclotron frequency, cyclotron radiation, semiconductor crystal.
Manuscript received 16.01.17; revised version received 14.04.17; accepted for
publication 14.06.17; published online 18.07.17.
1. Introduction
Mobile charge carriers in semiconductor crystals in the
state of thermal motion form solid-state plasma. Plasma
placed in a magnetic field radiates electromagnetic
waves due to the rotation of charged carriers with a
cyclotron frequency under the action of the Lorentz
force [1-3]. The cyclotron radiation of semiconductor
crystals is of interest for at least the following two
reasons. First, smooth tuning the radiation frequency is
carried out by changing the magnetic field induction.
Second, since the effective mass of charge carriers in
semiconductor crystals can be tenth and hundredth
fractions of the free electron mass, the cyclotron
radiation frequency at available magnetic fields can lie
in the microwave and far infrared (terahertz) ranges. The
latter region of the wavelengths of electromagnetic
waves is of some practical interest. This paper is devoted
to investigation of cyclotron radiation inherent to
thermal plasma of semiconductors.
2. Experimental
In experiments on the study of cyclotron radiation from
semiconductor crystals, there was used a permanent
magnet with an induction in the center of the air gap B =
0.45 T and a cylindrical ingot of p-Ge, its height was
4.6·10–2 m, the base diameter was 2.9·10–2 m and
specific resistivity 0.44 Ohm·m. This ingot was placed
into the air gap of the magnet in such a way that the axis
of the cylindrical ingot was perpendicular to the vector
of magnetic induction. The ingot itself was inside the
resonator, which was an aluminum tube.
Registration of cyclotron radiation was carried out
by using its effect on water. For this, 20 to 40 μl of water
were poured into the cylindrical plastic capsule. A ther-
mocouple was fixed in the near-surface layer of water. In
turn, the capsule was placed in a foam plastic cylinder that
was inserted into the opposite end of the resonator. We
used Keithley Model 2000 multimeter with 0.002% basic
DC voltage accuracy for temperature measurements.
3. Results and discussion
In studies on the impact of the effect of cyclotron
radiation from Ge light holes on water, both its heating
and cooling were observed. It should be noted that the
effect of liquid heating was not always clearly
expressed.
So, Fig. 1 shows the results of heating a liquid with
the volume 40 μl by cyclotron radiation of a germanium
ingot (curve 1) and its cooling after radiation termination
(curve 2), and at that in this and subsequent figures the
temperature changes ΔT were measured relative to the
liquid temperature in the initial state before the
experiment began.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 231-234.
doi: https://doi.org/10.15407/spqeo20.02.231
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
232
Fig. 1. Time dependences of water heating under the action of cyclotron radiation from Ge ingot (a) and its cooling
after radiation termination (b).
Fig. 2 shows the dependence of the change in
temperature on time upon cooling water with the volume
30 μl under the action of cyclotron radiation from the ger-
manium ingot (curve 1). After termination of cyclotron
radiation (removal of the ingot from the magnet gap), the
obtained state was preserved for an hour or more
(curve 2). With the repeated action of cyclotron radiation,
the water temperature tended to the initial value
corresponding to the start of the experiment (curve 3).
In studies, the time dependences were recorded as
well, in which two competing effects manifested them-
selves: first heating, and then cooling the liquid under
the action of radiation. Fig. 3 shows the corresponding
dynamics of temperature changes of water with the
volume 30 ml under the action (curve 1), after cessation
of action (curve 2) and with the repeated action (curve 3)
of cyclotron radiation from a germanium ingot.
Let us discuss the results obtained.
When a semiconductor crystal is placed in a
homogeneous magnetic field with a constant induction
B, taking into account that the effective mass of holes is
a scalar quantity (isotropic mass), hole begins to move
along spiral trajectories, i.e., helical lines, axis of which
coincides with the induction magnetic field. This means
that the particle simultaneously participates in two
motions: under the action of the Lorentz force it rotates
uniformly at the velocity ν⊥ along the circle (ν⊥ is the
component of the hole thermal velocity perpendicular to
the vector of magnetic induction) and it is translation
movement under its own inertia, i.e. moves uniformly
and rectilinearly at a constant velocity ν|| that is a
component of the hole thermal velocity parallel to the
vector of magnetic induction.
The angular velocity of hole rotation is called the
cyclotron (Larmor) frequency ωB. For nonrelativistic
particles (for holes in a semiconductor crystal, the
thermal velocity is much lower than the speed of light),
it is equal to [1]:
p
B
m
eB
=ω ,
Fig. 2. Time dependences of changes in the water temperature:
a – under the action of cyclotron radiation from Ge ingot; b –
after radiation termination; c – under the repeated action of
radiation.
0 5 10 15 20
0.00
0.02
0.04
0.06
0.08
0.10
Δ
T,
K
t, min
a
0 2 4 6 8 10 12 14
0.00
0.02
0.04
0.06
0.08
0.10
t, min
b
0 5 10 15 20 25 30 35 40 45
-0,16
-0,14
-0,12
-0,10
-0,08
-0,06
-0,04
-0,02
0,00
0,02
Δ
T
, K
t, min
a
0 5 10 15 20 25 30 35 40 45
t, min
b
-0,16
-0,14
-0,12
-0,10
-0,08
-0,06
-0,04
-0,02
0,00
0,02
Δ
T
, K
0 2 4 6 8 10 12 14 16 18 20
t, min
c
-0,16
-0,14
-0,12
-0,10
-0,08
-0,06
-0,04
-0,02
0,00
0,02
Δ
T
, K
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 231-234.
doi: https://doi.org/10.15407/spqeo20.02.231
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
233
where e is the elementary electric charge (electron
charge). At B = 0.45 T, the cyclotron frequency of light
holes (mp = 0.043 m0, where m0 is the free electron
mass), accordingly to the equation, equals νB =
2.9·1011 Hz (ωB = 2πνB).
Since during rotation the particle undergoes
acceleration that is constant in magnitude and directed
perpendicularly to the velocity, it is the source of
radiation of electromagnetic waves at the frequency ωB
[1-3].
Fig. 3. Time dependences of changes in the water temperature:
a – under the action of cyclotron radiation from Ge ingot; b –
radiation is absent; c – repeated radiation.
Radiation of all charged carriers still determines the
intensity of the cyclotron radiation of thermal plasma in
a semiconductor crystal. However, not all the semicon-
ductor crystal radiates, but only some its near-surface
region does it. Radiation in the bulk is “locked”.
In the bulk of a semiconductor crystal, where this
radiation is “locked”, it is in a thermodynamically
equilibrium state with matter. That is, radiation of
charged particles is compensated by absorption. In this
case, the radiation spectrum of plasma is equivalent to
that of the absolutely black body [1, 2]. In the outer
layers, from the fact that the radiation yield becomes
significant, plasma is in a state of local thermodynamic
equilibrium, and radiation is not the same as the black-
body one. Its spectrum is localized in the vicinity of the
cyclotron frequency, and the radiation intensity does not
exceed that for the absolutely black body in vacuum [1].
Let’s suppose that plasma of the outer radiating
layer is not in a state of local thermodynamic
equilibrium. In particular, the fact of presence of near-
surface space charge regions, which are depleted of free
electrons or holes, is essential for this situation. These
regions, due to the above circumstance, also have a
reduced ability to absorb electromagnetic waves. In view
of this, the space charge region is an effective drain of
photons from the radiating layer of the semiconductor
into the surrounding space. As a result, the cyclotron
radiation of the crystal outer layer is not compensated by
absorption, that is, the time for achieving an equilibrium
particle energy distribution exceeds the time of energy
losses by radiation. In other words, the cyclotron
radiation of thermal electrons becomes thermo-
dynamically non-equilibrium. As a consequence, the
near-surface region of semiconductor is cooled. In [4],
the surface of Ge, InSb, InAs, and GaAs was cooled
after exposure to magnetic field pulses.
The degree of deviation of plasma from the state of
thermodynamic equilibrium has a limit. The energy of a
cyclotron radiation quantum should not exceed the
average kinetic energy of the thermal motion of charge
carriers.
The effect of cooling the liquid under the action of
cyclotron radiation and the subsequent preservation of
the achieved state after cessation of the action of
electromagnetic radiation can be interpreted as the effect
of the “memory” of water. That is, the liquid
“remembers” the fact of its irradiation [5, 6] and can
serve as a carrier of information, acquiring new
properties under the influence of low-intensity
millimeter radiation, that are responsible to a therapeutic
effect observed when using previously irradiated water
[6, 7]. It is based on the resonance interaction of
radiation with proton and cluster structures (H2O)n (the
values lie within the range from 2 up to 140), the
spectrum of own frequencies of which comprises in the
millimeter and submillimeter regions [6, 8, 9].
Electromagnetic radiation causes destruction of cluster
conglomerates due to resonant phenomena as well as
subsequent restoration in another form, which leads to a
0 5 10 15 20 25 30 35 40 45 50 55 60 65
t, min
b
-0,16
-0,14
-0,12
-0,10
-0,08
-0,06
-0,04
-0,02
0,00
0,02
Δ
T,
K
0 5 10 15 20 25 30 35 40 45
t, min
c
-0,16
-0,14
-0,12
-0,10
-0,08
-0,06
-0,04
-0,02
0,00
0,02
Δ
T,
K
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75
-0,16
-0,14
-0,12
-0,10
-0,08
-0,06
-0,04
-0,02
0,00
0,02
0,04
0,06
0,08
Δ
T,
K
t, min
a
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 231-234.
doi: https://doi.org/10.15407/spqeo20.02.231
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
234
change in the hydrogen bonds between the molecules of
water and, hence, the molecule itself [8]. In particular, a
shift of signal in the proton nuclear magnetic resonance
to a strong field is observed, which indicates destruction
of hydrogen bonds between water molecules followed
by the passage of molecules from liquid to vapor [8]. In
water, for any frequency of electromagnetic waves in the
superhigh-frequency and terahertz ranges, there are
always clusters capable to absorb radiation quanta [6].
Metastable states formed in water under action of
radiation persisted from 2-3 days to several weeks [6, 8].
Thus, destruction of cluster conglomerates inten-
sifies the process of water evaporation. As a result, the
temperature of the near-surface layer of liquid is
lowered, where the thermocouple is located. Repeated
action of cyclotron radiation makes it possible to reverse
formation of cluster structures, which is accompanied by
a decrease in the intensity of evaporation and an increase
in the temperature of liquid to its initial state.
Finally, the presence of a section corresponding to
water heating is likely to be strongly influenced by the
fact that the magnetic induction in the air gap is
distributed depending on the radial coordinate, and in the
case of the ingot accidental location, some deviations in
the values of the cyclotron frequency take place in it.
Apparently, when the cyclotron frequency coincided
with one of the eigenfrequencies of the resonator, the
heating effect took place.
4. Conclusion
Magnetized thermal plasma of the radiating layer under
certain circumstances, in particular caused by the
presence of a space-charge region at the surface of
semiconductor crystal, is not in the state of
thermodynamic equilibrium. In this case, under the
action of magnetic field, transformation of kinetic
energy of free carrier thermal motion into cyclotron
radiation of microwave and terahertz ranges, which is
not in thermodynamic equilibrium with material, takes
place. Energy of electromagnetic radiation quantum is
limited by the average kinetic energy of free carriers
thermal motion. The latter circumstance limits the
degree of deviation of plasma from the state of
thermodynamic equilibrium. Smooth tuning the radiation
frequency can be carried out by changing the magnetic
field induction.
References
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York: Wiley, 1966.
2. Krall N.A., Trivelpiece A.W. Principles of Plasma
Physics. New York, McGraw-Hill Book Company,
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3. Longmire C.L. Elementary Plasma Physics. New
York and so on: Intersci. Publ., 1963.
4. Davydov V.N., Loskutova E.A., Naiden E.P.
Delayed structural changes in semiconductors
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(in Russian).
5. Fesenko E.E., Geletyuk V.I., Kasachenko V.N.,
Chemeris N.K. Preliminary microwave irradiation
of water solution changes their channel-modifying
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normalization in functional state of man’s viscera
under the action of water activated by millimeter
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medicine. 1996. No. 8. P. 65–68.
8. Gapochka L.D., Gapochka M.G., Korolev A.F.,
Kostenko A.I., Suhorukov A.P., Timoshkin I.V.
Effect of electromagnetic irradiation of extremely
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Bulletin of Moscow University. Ser. 3. Physics,
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P. 281–284.
|
| id | nasplib_isofts_kiev_ua-123456789-214927 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T13:44:29Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Milenin, G.V. Milenin, V.V. Redko, R.A. 2026-03-04T12:49:26Z 2017 High-frequency electromagnetic radiation of germanium crystals in magnetic fields / G.V. Milenin, V.V. Milenin, R.A. Redko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 231-234. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 72.30.+q, 73.50.Mx, 76.40.+b https://nasplib.isofts.kiev.ua/handle/123456789/214927 https://doi.org/10.15407/spqeo20.02.231 The cyclotron radiation of plasma of thermal carriers of germanium crystals, which is not in the state of thermodynamic equilibrium with the semiconductor, has been experimentally confirmed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics High-frequency electromagnetic radiation of germanium crystals in magnetic fields Article published earlier |
| spellingShingle | High-frequency electromagnetic radiation of germanium crystals in magnetic fields Milenin, G.V. Milenin, V.V. Redko, R.A. |
| title | High-frequency electromagnetic radiation of germanium crystals in magnetic fields |
| title_full | High-frequency electromagnetic radiation of germanium crystals in magnetic fields |
| title_fullStr | High-frequency electromagnetic radiation of germanium crystals in magnetic fields |
| title_full_unstemmed | High-frequency electromagnetic radiation of germanium crystals in magnetic fields |
| title_short | High-frequency electromagnetic radiation of germanium crystals in magnetic fields |
| title_sort | high-frequency electromagnetic radiation of germanium crystals in magnetic fields |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214927 |
| work_keys_str_mv | AT mileningv highfrequencyelectromagneticradiationofgermaniumcrystalsinmagneticfields AT mileninvv highfrequencyelectromagneticradiationofgermaniumcrystalsinmagneticfields AT redkora highfrequencyelectromagneticradiationofgermaniumcrystalsinmagneticfields |