Quantum-size effects in semiconductor heterosystems
Created based on Si, GaAs, and C₆₀ fullerenes, low-dimensional heterostructures with a surface quantum-size effect at the film-substrate interface. There have been defined technological conditions of its appearance. Using modulation electroreflectance spectroscopy, spectral broadening parameters, th...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2017 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/214928 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Quantum-size effects in semiconductor heterosystems / L.A. Matveeva, E.F. Venger, E.Yu. Kolyadina, P.L. Neluba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 224-230. — Бібліогр.: 27 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Created based on Si, GaAs, and C₆₀ fullerenes, low-dimensional heterostructures with a surface quantum-size effect at the film-substrate interface. There have been defined technological conditions of its appearance. Using modulation electroreflectance spectroscopy, spectral broadening parameters, the energy relaxation time of excited light charge carriers, the energy of quantized levels, and the width of the quantum wells.
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| ISSN: | 1560-8034 |