Quantum-size effects in semiconductor heterosystems
Created based on Si, GaAs, and C₆₀ fullerenes, low-dimensional heterostructures with a surface quantum-size effect at the film-substrate interface. There have been defined technological conditions of its appearance. Using modulation electroreflectance spectroscopy, spectral broadening parameters, th...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Цитувати: | Quantum-size effects in semiconductor heterosystems / L.A. Matveeva, E.F. Venger, E.Yu. Kolyadina, P.L. Neluba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 224-230. — Бібліогр.: 27 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860279398889947136 |
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| author | Matveeva, L.A. Venger, E.F. Kolyadina, E.Yu. Neluba, P.L. |
| author_facet | Matveeva, L.A. Venger, E.F. Kolyadina, E.Yu. Neluba, P.L. |
| citation_txt | Quantum-size effects in semiconductor heterosystems / L.A. Matveeva, E.F. Venger, E.Yu. Kolyadina, P.L. Neluba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 224-230. — Бібліогр.: 27 назв. — англ. |
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| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Created based on Si, GaAs, and C₆₀ fullerenes, low-dimensional heterostructures with a surface quantum-size effect at the film-substrate interface. There have been defined technological conditions of its appearance. Using modulation electroreflectance spectroscopy, spectral broadening parameters, the energy relaxation time of excited light charge carriers, the energy of quantized levels, and the width of the quantum wells.
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| first_indexed | 2026-03-21T13:44:44Z |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 224-230.
doi: https://doi.org/10.15407/spqeo20.02.224
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
224
PACS 78.40.Ri
Quantum-size effects in semiconductor heterosystems
L.A. Matveeva, E.F. Venger, E.Yu. Kolyadina, P.L. Neluba
V.E. Lashkarov Institute of Semiconductor Physics NAS of Ukraine,
45, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: matveeva@isp.kiev.ua
Abstract. Created on the basis of Si, GaAs and C60 fullerenes were low-dimensional
heterostructures with a surface quantum-size effect at the film-substrate interface. There
have been defined technological conditions of its appearance. Using modulation
electroreflectance spectroscopy, calculated were spectral broadening parameters, the
energy relaxation time of excited light charge carriers, the energy of quantized levels and
the width of the quantum wells.
Keywords: heterostructures, interface, electroreflectance, electronic parameters,
quantum-size effect.
Manuscript received 27.01.17; revised version received 11.04.17; accepted for
publication 14.06.17; published online 18.07.17.
1. Introduction
Physical properties of heterosystems are not a simple
sum of the contacting materials. They acquire new
electronic and optical properties due to appearance of the
surface potential, internal mechanical stresses, built-in
electric fields and quantum size effects at the film-
substrate interface. When the size of the region of free
charge carrier localization becomes comparable with the
free length, their movement is restricted to one, two or
three directions. Low-dimensional heterosystems have a
different energy dependence of the electron density of
states in the band structure, which depends on their
dimensions. Decreasing localization of free charge
carriers reduces heterosystem dimensionality. These
heterosystems can be two-dimensional with quantum
wells, one-dimensional in the case of quantum wires and
zero-dimensional when quantum dots are available. The
energy dependence of the density of electron states in
these low-dimensional structures is different.
Monotonous quadratic energy dependence, which is
typical for bulk sample, becomes discrete. For two-
dimensional structures, it is monotonous and changes
stepwise with increasing the energy of charge carriers.
For one-dimensional structures, it is continuous and
sawtooth, and is set of dashed lines for zero-dimensional
structures [1]. It is necessary to distinguish between the
bulk quantum-size effect in heterosystems with a
rectangular quantum well, where quantized are both
types of charge carriers, from the surface quantum-size
effect, when quantized is only one their type in the
triangular quantum well. Transformation of the band
structure in the low-dimensional heterosystems leads to
changes in their electronic and optical properties [2].
Silicon is still the main material of semiconductor
electronics. Gallium arsenide ranks second after the
silicon and is also widely used in optoelectronics. On its
basis, there are LEDs, lasers, photodetectors and solar
cells. Sulfidation of the GaAs surface decreases the
density of surface electronic states and increases the
intensity of photoluminescence [3]. Development of
technology for production of fullerenes in the form of
film material on different substrates expands the use of
nanostructures with C60 fullerenes [4], including solar
cells [5, 6] and sensors of physical quantities [7].
Modulation electroreflectance spectroscopy has
considerable advantages in comparison with classical
reflectance and transmittance spectroscopy. When
investigating the band structure of semiconductors, their
electronic and optical properties, the sensitivity of this
method is several orders of magnitude more sensitive
than the classical optical methods. The advantage of the
modulation spectra is that they reveal the thin structure
usually hidden unstructured background. The
electroreflectance method is more sensitive to the band
structure of the semiconductors, because its signal is the
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 224-230.
doi: https://doi.org/10.15407/spqeo20.02.224
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
225
third derivative of the optical constants. The signal exists
at the critical points of the Brillouin zone only in the
region of direct transitions, and it disappears at some
distance from the critical point. The electroreflectance
signal is determined by the optical and electronic
properties of the surface under study [8-10].
The purpose of this study was to find and study the
surface quantum-size effect in semiconductor
heterosystems based on silicon, gallium arsenide, and
C60 fullerene by using modulation electroreflectance
spectroscopy.
2. Experiment
Measurements of electroreflectance spectra in the
heterosystems were carried out with the electrolytic
method. Essence of the method is to register changes in
the reflectivity of the semiconductor surface ΔR/R upon
application of a weak modulating electric field.
Measurements were made using the setup based on the
DMR-4 monochromator with automatic registration of
spectra on the screen in a linear energy scale. The
spectral resolution was 3 meV. The sensitivity of this
apparatus for ΔR/R signal measurement reached 10–6,
and the accuracy of measuring intensity was 2%. The
signal was recorded within the spectral range 1.5 to
3.5 eV at room temperature in a weak-field measuring
regime. The modulating voltage did not exceed 0.7 V.
The samples were placed into a silica electrolytic
cell with 0.1 N water KCl solution. From the
photomultiplier, the signal was fed to the selective
amplifier U2-6 and registered using a synchronous
detector. This method allowed us to obtain information
about the band structure of heterosystem on its surface
and in the region of the film-substrate interface, as well
as to detect its change depending on the technological
conditions of heterosystems manufacturing and
influence on them caused by external actions.
In order to obtain heterosystems with the quantum
size effect, we used anisotropic chemical etching of Si
[11] and GaAs [12] surfaces, sulfide passivation of
GaAs surface by chemical etching [13], neutron
irradiation and annealing of Si wafers [14], as well as
thermal vacuum deposition of C60 fullerenes on Si and
the cover glass substrate [15]. An analysis of the
electroreflectance spectra in a specific region of the k-
space in the Brillouin zone for a direct transition makes
it possible to determine the transition energy Eg, the
phenomenological Lorentz broadening parameter Г,
which allows for dissipation processes in the electron
transition, and the energy relaxation time τ of the light
excited charge carriers. These parameters were
determined using the three-point method by Aspnes [16].
3. Results and discussion
The results of measurement of the electroreflectance
spectra of the initial n-Si (100) surface and
anisotropically etched in HF:HNO3 = 20:1 mixture in the
course of 20…30 min depicted in Fig. 1. The
electroreflectance signal of the initial surface Si was
recorded in the region of 3.2 to 3.55 eV (curve 1, Fig. 1).
According to the electron band structure of silicon, this
electroreflectance signal corresponds to direct transitions
that occur between the valence and conduction bands at
the center of the Brillouin zone. In the process of
anisotropic chemical etching, the surface of the Si(100)
plate dimmer, and microrelief appears on the surface.
The SiO2 layer of crystal modification of β-crystoballite
forms at the plate surface [11]. The electroreflectance
spectrum of anisotropically etched silicon surface is
shown in Fig. 1, curve 2. There are inversion of the
polarity signal, the value of the phenomenological
parameter Γ decreases, and peaks are separated by
40 meV.
At the initial surface of the silicon substrate, and
also after the oxide layer is removed from the
microrelief surface, the bands undergo depletion
bending. The surface is depleted of electrons, and the
band are bent upward (Fig. 1, spectrum 1). On the Si
surface under a layer of SiO2, the potential is of
enrichment type, and the bands are bent downward
(Fig. 1, spectrum 2). The substrate surface is enriched
with electrons, and this leads to the change in the
electroreflectance signal phase at the interface SiO2–Si.
The doublet nature of the peaks of electro-
reflectance in anisotropically etched silicon can be
explained by the effect of surface quantization of the
electron energy in the enriched surface layer of silicon at
the boundary. Between the SiOx layer and silicon, there
is a quantum well. Availability of 2D electrons in the
conduction band leads to a situation when, in addition to
electron transitions between the main bands, there are
transitions between the valence band and the quantized
level e1 in the 2D quantum well. The presence of two
transitions with energies Eg and Eg+e1 splits the peaks in
the electroreflectance spectrum.
Fig. 1. Electroreflectance spectra of initial (1) and anisotro-
pically etched (2) silicon surfaces in the E0 transition region.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 224-230.
doi: https://doi.org/10.15407/spqeo20.02.224
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
226
The energy of optical transitions in the quantum-
sized system for the first quantization level is given by
the expression
e = Eg + ħ2π2/2 m*L2, (1)
where Eg is the band-to-band transition energy, m* – the
band-to-band effective mass, and L – width of the
quantum well. The value e1 = 40 meV found from the
experimental electroreflectance spectra under the
assumption that the effective hole mass is mp = 0.49m0 at
the point Г′25 C and that the effective electron mass is
me = 0.156m0 (there m0 is the free electron mass). With
allowance for the expression (1), the width of the
quantum well L is 4 nm.
Using the electroreflecance spectroscopy method,
we also examined the microrelief As2O3–pnn+-GaAs
heterostructures [12]. On the Te-doped n+-GaAs(100)
substrate with electron concentration of
8⋅1018…2⋅1019 cm–3 and thickness of 300 μm, we used
the CVD method to deposite the 10…15-μm Si-doped
(n-type) and the 10…15-μm Zn-doped (p-type) GaAs
layers with the carriers concentration of about
8⋅1016…1017 cm–3. The microrelief heterostructures were
formed on the frontal surface of the pnn+-GaAs
substrates by chemical etching in a 10…15 N HNO3
solution for 10 s at room temperature.
Fig. 2 depicts electroreflectance of E1 and E1+Δ1
transition for initial pnn+-GaAs substrate (curve 1) and
microrelief As2O3–pnn+-GaAs heterostructure obtained
using 10-s anisotropic etching (curve 2). Table 1
illustrates the electron zone parameters of pnn+-GaAs
substrate and relief As2O3–pnn+-GaAs heterostructure:
the E1 and E1+Δ1 energy transitions, the value of spin-
orbit splitting Δ1, the spectral broadening parameters Г1
and Г1+Δ1. The decease of Г parameters for the substrate
in heterosystem caused by a good quality of the interface
As2O3–pnn+-GaAs. Such a feature is observed
repeatedly, for example, at the SiO2–Si microrelief
interface [11].
Fig. 2. Electroreflectance spectra of pnn+-GaAs with flat (1)
and microrelief As2O3–GaAs (2) surfaces.
Table 1. Effect of anisotropic chemical etching on zone
parameters of pnn+-GaAs (tACE = 10 s).
Zone parameters, eV
Surface type
E1 E1+Δ1 Δ1 Γ1 Γ1+Δ1
Non-patterned 2.969 3.161 0.192 0.119 0.104
Patterned 2.895 3.105 0.210 0.090 0.089
In Fig. 2, there are two other remarkable features in
the electroreflerctance spectrum of the microrelief
sample: 1) inversion of signal polarity and 2) formation
of a fine peaked structure, which is seen most clearly on
the short-energy shoulder of the ER spectrum. These
features may result from: 1) inversion of substrate
conductivity type from p to n under formation of the
inversion layer on As2O3–pnn+-GaAs interface and
2) decrease in the heterosystem dimensionality from 3D
to 2D for the carrier motion in the direction
perpendicular to the interface. At the interface, the
triangular quantum well (QW) appears with quantized
levels (QL) in the two-dimensional electron gas channel.
In Fig. 2, one can see 3 quantum levels.
Table 2 illustrates the energy of quantized levels En
and the width of quantum well Ln at the As2O3–pnn+-
GaAs interface. In accordance with Table 2, the
inversion layer is presented by the triangular quantum
well with energy quantum levels of 36, 64 and 93 meV
on its width from 14 to 26 nm.
It was applied GaAs surface passivation with
sulphur to improve its structural perfection and
electronic properties. Using the electroreflectance
method, we investigated the real and chemically sulfided
gallium arsenide surface within the spectral regions of E0
and E0+E1 transitions. Natural oxide was removed from
real surface of substrate by etching for 10 min in the
mixture of H2SO4:H2O2:H2O = 3:1:2 and by washing in
distilled water. Then, the samples were placed for 5 to
20 min in saturated solution of Na2S·9H2O and
illuminated with an incandescent lamp 500 W. After
washing with distilled water, the samples were dried in a
stream of warm air. Under the action of photochemical
reaction, the bonds Ga–As were broken and the bonds
Ga–S appeared. Investigations of GaAs surface before
and after its sulfidation were carried out in the spectral
range of 1.3…1.6 eV for Е0 transition and 2.6…3.4 eV
for Е1 transition. Fig. 3a shows electroreflectance spectra
of initial surface (curve 1) and after its sulfidation
(curve 2) for E0 transition. Fig. 3b shows the
corresponding spectra for E1 transition. In contrast to the
initial surface of GaAs, the electroreflectance signal
from sulphided surface also appeared in the region
2.5…2.65 eV. Its appearance can be explained by
formation of Ga2S3 sulphide coating with Еg = 2.55 eV
band [17]. The coating had a p-type conductivity, and
Г = 55 meV.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 224-230.
doi: https://doi.org/10.15407/spqeo20.02.224
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
227
Table 2. Energy position of quantum level En on the width of
quantum well Ln.
The position of QL En, eV Width of QW L, nm
0.036 14.08
0.064 21.11
0.093 25.7
Fig. 3. Electroreflectance spectra of initial (1) and sulphurized
(2) GaAs surfaces in the Е0, Е0+Δ0 (a) and Е1, Е1+Δ1 (b)
transition regions.
Presented in Table 3 are electronic parameters of
the electroreflectance spectra of GaAs surface for
different duration of its sulphidation [18]. The decrease
of Г value and increase of the energy relaxation time
inherent to the excited light charge carriers (τ = ħ/Γ) for
both transitions is an evidence of electronic passivation
of gallium arsenide surface after its sulphidation.
Decreasing Еg by 14 meV for the transition Е0 and
7 meV for Е1 is caused by occurrence of internal
mechanical stresses (1.3·108 Pa) in Ga2S3–GaАs
heterosystems [19]. Splitting the electroreflectance
signal is associated with appearance of the surface
quantum size effect in the heterosystem. In this case, the
parameter Г is decreased and τ is increased at the
interface, which lead to an increase in the free path of
charge carriers and increases their mobility μ.
Table 3. Electronic parameters of GaAs surface determined
from electroreflectance spectra (region E0) at different
sulfidation time.
t,
min
E0,
eV ΔE0, eV Γ,
meV τ, 10–14 s μ,
cm/(V·s)
0 1.451 80 0.82 2000
5 1.437 –0.014 32 2.05 3200
10 1.397 –0.054 36 1.82 3000
20 1.390 –0.061 51 1.29 2400
The method of light electroreflectance spectro-
scopy was used to study crystals of p-type silicon, grown
by the Czochralski method (specific resistivity was
10 Ohm·cm, oxygen concentration – 8·1017 cm–3).
Measurements of electroreflectance spectra were carried
out in the spectral region of 3 to 3.8 eV (direct transition
Е0 in the centre of the Brillouin zone of Si). The samples
were irradiated with fast neutron fluence
1015…1018 n/cm2 at 70 °C [14]. Particular attention was
given to preparation of its surface to measurements [20].
It was used isothermal annealing (800 °С, 700 hours) in
order to create the oxygen phase in crystals. The layer
disrupted by mechanical polishing was removed by
polishing etching in the mixture HF:HNO3:H2O = 1:3:1.
The shape of electroreflectance signal depended on
irradiation conditions and thermal treatment of the
samples (the presence of oxygen-silicon precipitates,
radiation defects). The electroreflectance spectrum of the
initial sample was bipolar, Г = 138 meV (Fig. 4a,
curve 1). After annealing of the initial sample (800 °С,
700 hours), the broadening parameter of the spectrum
decreased down to 68 meV. The spectrum has shifted to
the high-energy region. The annealed sample (Fig. 4a,
curve 2) p-type conductivity changed to n-type.
Inversion of the signal due to formation of high-
temperature thermal donors occurred in the process of
annealing [21]. Еg increase and decrease of the
parameter Г is associated with a decrease of mechanical
stresses and improvement of the structural quality of the
sample surface after chemical treatment.
Neutron irradiation of the samples before annealing
led to transformation of the structural defects in the
crystal. Radiation defects on the surface of the sample
formed at lower doses than in the bulk. Therefore, the
surface layer of 15-μm thickness was removed by
chemical etching. At low doses, plate precipitates of
crystalline phase (kristobalit) appear. With increasing of
the neutron fluence, there occurred colony of
microprecipitates (amorphous SiO2) [22]. Fig. 4b shows
the electroreflectance spectra of silicon irradiated with
the fluence 1018 n/сm2 before annealing (curve 1) and
after annealing at 800 °С (curve 2). On the curve 1, two
maxima are clearly seen at 3.325 and 3.403 eV. The
splitting of the signal (78 meV) in annealed silicon is
caused by appearance of different areas of disorder in it
(accumulation of divacancies or interstitial defects).
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 224-230.
doi: https://doi.org/10.15407/spqeo20.02.224
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
228
Fig. 4. Electroreflectance spectra of monocrystalline mechani-
cally polished and chemically etched silicon: a) non-annealed
before irradiation (1) and annealed (2); b) irradiation fluence
1018 n/cm2 non-annealed (1) and annealed (2).
Mechanical stresses change semiconductor band
gap [23]. Vacancy type disordering in Si leads to
appearance of tensile stresses and an increase of Еg from
3.348 up to 3.403 eV. Interstitial defects create
compressive stresses, and Еg value decreases down to
3.325 eV. The local increase and decrease of Еg in the
sample splits of the electroreflectance signal.
After annealing at 800 °С, the regions of both types
of disorder and point radiation defects are annealed,
mechanical stresses of different sign compensate one
another, the defect structure of the sample improves, and
there is a quantum-size effect (Fig. 4b, curve 2). During
annealing of the irradiated samples, there appear
thermodonors and electrically active particles of a new
phase SiOх. In the annealed sample, influence of the
interface SiOх/Si on the band structure of heterosystem
and electronic processes in it increases with growth of
the neutron fluence. The negative charge compensating
positive charge in the oxide accumulates during the
annealing process at the interface with silicon. Bands are
curved down, and charge carriers are quantized in a
triangular potential well at the interface. With increasing
the irradiation dose, the energy of quantized level
increases from 60 up to 85 meV, and the width of the
quantum well decreases from 3 down to 2 nm [14].
The discovery of new carbon molecules Cn called
fullerenes has led to the appearance of a new class of
carbon based solids and heterostructures [24, 25].
Among the famous fullerenes, C60 molecules are most
symmetrical and stable. The carbon atoms in them have
a covalent type of bonding, and the C60 molecules in the
crystal have the weak bond corresponding to van der
Waals interaction.
The C60 films were obtained using thermal evapo-
ration of C60 powder in vacuum at pressure 10–4 Pa from
an effusion tantalum cell at the temperature of 650 K on
non-heated n-Si and cover glass substrates [15]. The
thickness of films was 0.2 μm. Substrate material does
not effect on the films structure at the deposition rate
5…10 nm/s. According to [26], C60 fullerene films are a
new direct band semiconductor with Eg band gap value
near 1.6 eV.
Fig. 5 presents the electroreflectance spectra of
C60/n-Si heterosystem from the films surface (Fig. 5a)
and from the interface (Fig. 5b). The band gap Eg was
1.7 eV for C60 film and 3.59 eV for Si substrate. The C60
films on n-Si substrate have p-type conductivity and the
weak splitting of the electroreflectance signal. The C60
film surface on n-Si substrate is depleted on electrons,
and the bands are bent upward (Fig. 5a). Splitting of the
electroreflectance signal indicates appearance of weak
quantum-size effect in the film.
Fig. 5. Electroreflectance spectra of the film (a) and interface
(b) in C60/Si heterosystem.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 224-230.
doi: https://doi.org/10.15407/spqeo20.02.224
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
229
Fig. 6. Electroreflectance spectrum of C60 film on glass
substrate.
The conductivity type of C60 film on the insulating
glass substrate changed from p to n, and the signal
splitting increased (Fig. 6). At the interface, the film C60
is enriched with electrons, and the bands are bent
downwards. The enrichment of the films with electrons
contributes to appearance of interfacial electronic states.
It causes a phase change of the electroreflectance signal
in the C60 film on cover glass substrate [27]. The doublet
nature of the electroreflectance peaks in C60 films on
insulating substrate can be explained by the influence of
surface quantization of electron energy in the enriched
layer of C60 film on the interface (Fig. 6). The presence
of two transitions with the energies Eg = 1.65 eV and
Eg+e1 = 1.7 eV splintered peaks in the spectrum. The
energy of quantum level e1 = 50 meV. For E0 transition
in C60 film, the hole effective mass mp is 1.3m0, the
electron effective mass me is 1.5m0. The reduced
effective mass m* is 0.697m0. For 50 meV quantum
level, the width of the quantum well is 2 nm.
4. Conclusion
To obtain heterosystems with quantum size effect, the
complex of technological methods was used. It included
the anisotropic chemical etching of p-Si and pnn+-GaAs
surface, different doses of neutron irradiation and
thermal annealing of p-Si crystals with the concentration
of dissolved oxygen 8⋅10–17 cm–3, the chemical sulfide
passivation of n-GaAs (100) surface, C60 fullerene
thermal deposition on n-Si and cover glass substrates.
Electrolytic method of modulation spectroscopy of light
electroreflectance is a most sensitive to the band
structure of semiconductors. Therefore, it was used for
investigations of the band structure and electronic
parameters of the surface and interface of the
heterosystems with the quantum size effect.
The quantum size effect in heterosystems prepared
using different methods appears as a result of inversion
of semiconductor conductivity type (from p to n) at the
film-substrate interface. It leads to appearance of
additional electronic transitions at the interface and
splitting of the electroreflectance signal. Depending on
the heterosystems manufacturing conditions and external
influences, energies of the main electronic transition and
quantized levels in a triangular potential well and the
width of the well for each level, as well as broadening
parameters of the spectra, the energy relaxation time of
the excited light volume and quantized carriers were
identified. Found in the patterned As2O3–pnn+-GaAs
heterosystems were 3 quantized levels with the energies
36, 64 and 93 meV for the widths of the quantum well
14.08, 21.11 and 25.7 nm, respectively.
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|
| id | nasplib_isofts_kiev_ua-123456789-214928 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T13:44:44Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Matveeva, L.A. Venger, E.F. Kolyadina, E.Yu. Neluba, P.L. 2026-03-04T12:51:34Z 2017 Quantum-size effects in semiconductor heterosystems / L.A. Matveeva, E.F. Venger, E.Yu. Kolyadina, P.L. Neluba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 224-230. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS: 78.40.Ri https://nasplib.isofts.kiev.ua/handle/123456789/214928 https://doi.org/10.15407/spqeo20.02.224 Created based on Si, GaAs, and C₆₀ fullerenes, low-dimensional heterostructures with a surface quantum-size effect at the film-substrate interface. There have been defined technological conditions of its appearance. Using modulation electroreflectance spectroscopy, spectral broadening parameters, the energy relaxation time of excited light charge carriers, the energy of quantized levels, and the width of the quantum wells. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Quantum-size effects in semiconductor heterosystems Article published earlier |
| spellingShingle | Quantum-size effects in semiconductor heterosystems Matveeva, L.A. Venger, E.F. Kolyadina, E.Yu. Neluba, P.L. |
| title | Quantum-size effects in semiconductor heterosystems |
| title_full | Quantum-size effects in semiconductor heterosystems |
| title_fullStr | Quantum-size effects in semiconductor heterosystems |
| title_full_unstemmed | Quantum-size effects in semiconductor heterosystems |
| title_short | Quantum-size effects in semiconductor heterosystems |
| title_sort | quantum-size effects in semiconductor heterosystems |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214928 |
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