Quantum-size effects in semiconductor heterosystems
Created based on Si, GaAs, and C₆₀ fullerenes, low-dimensional heterostructures with a surface quantum-size effect at the film-substrate interface. There have been defined technological conditions of its appearance. Using modulation electroreflectance spectroscopy, spectral broadening parameters, th...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2017 |
| Main Authors: | Matveeva, L.A., Venger, E.F., Kolyadina, E.Yu., Neluba, P.L. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/214928 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Quantum-size effects in semiconductor heterosystems / L.A. Matveeva, E.F. Venger, E.Yu. Kolyadina, P.L. Neluba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 224-230. — Бібліогр.: 27 назв. — англ. |
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