Quantum-size effects in semiconductor heterosystems

Created based on Si, GaAs, and C₆₀ fullerenes, low-dimensional heterostructures with a surface quantum-size effect at the film-substrate interface. There have been defined technological conditions of its appearance. Using modulation electroreflectance spectroscopy, spectral broadening parameters, th...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2017
Main Authors: Matveeva, L.A., Venger, E.F., Kolyadina, E.Yu., Neluba, P.L.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/214928
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Quantum-size effects in semiconductor heterosystems / L.A. Matveeva, E.F. Venger, E.Yu. Kolyadina, P.L. Neluba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 224-230. — Бібліогр.: 27 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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