Polishing etchant compositions for the chemical treatment of the PbTe and Pb₁₋ₓSnₓTe solid solutions single crystals and methods for their processing. Review
The review of works devoted to the use of polishing etchant composition for chemical treatment of the PbTe and Pb₁₋ₓSnₓTe solid solutions single crystals, and methods for their processing.
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2017
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| Cite this: | Polishing etchant compositions for the chemical treatment of the PbTe and Pb₁₋ₓSnₓTe solid solutions single crystals and methods for their processing. Review / G.P. Malanych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 217-223. — Бібліогр.: 31 назв. — англ. |
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| citation_txt | Polishing etchant compositions for the chemical treatment of the PbTe and Pb₁₋ₓSnₓTe solid solutions single crystals and methods for their processing. Review / G.P. Malanych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 217-223. — Бібліогр.: 31 назв. — англ. |
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| description | The review of works devoted to the use of polishing etchant composition for chemical treatment of the PbTe and Pb₁₋ₓSnₓTe solid solutions single crystals, and methods for their processing.
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 217-223.
doi: https://doi.org/10.15407/spqeo20.02.217
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
217
PACS 68.55.J-, 77.84.Bw, 81.05.Hd, 81.65.Cf, 81.65.Ps
Polishing etchant compositions for the chemical treatment
of the PbTe and Pb1–xSnxTe solid solutions single crystals and
methods for their processing. Review
G.P. Malanych
V. Lashkaryov Institute of Semiconductor Physics,
National Academy of Sciences of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: galya.malanich@gmail.com
Abstract. The review of works devoted to the use of polishing etchant composition for
chemical treatment of the PbTe and Pb1–xSnxTe solid solutions single crystals and
methods for their processing.
Keywords: single crystal, lead telluride, Pb1–xSnxTe solid solutions, chemical etching.
Manuscript received 12.01.17; revised version received 18.04.17; accepted for
publication 14.06.17; published online 18.07.17..
1. Chemical polishing the PbTe and Pb1–xSnxTe
surfaces
Availability of a disturbed deform layer on the surface of
thermoelectric modules that are made from the bulk
PbTe by using abrasive technology operations (cutting,
mechanical grinding and polishing) reduces their
thermoelectric figure of merit (decreases the
thermopower, increases thermal conductivity and elect-
rical resistivity) and contributes to their degradation. In
addition, the PbTe single crystal is used as a material for
substrates at the growth of PbTe/Pb1–xSnxTe hetero-
structures, which are key components in fabrication of
photodetectors and IR diodes. Quality of detectors and
substrates for epitaxy is directly related to quality of the
material itself (structural perfection and purity of the
material), and processes used to produce them (cutting
the ingots, polishing the crystal surface, and metallic
contact deposition). In manufacturing of detectors and
substrates, chemical treatment of the PbTe and Pb1–
xSnxTe solid solutions surface plays an important role.
Its main goal is to remove the surface deformation layer
produced by preceding abrasive processing and obtain
high-purity chemically homogeneous surfaces as
structurally perfect as possible.
For obtaining high-quality polishing and struc-
turally perfect and defectless surfaces of the PbTe and
Pb1–xSnxTe solid solutions, with simultaneous retaining
the needed geometrical parameters, chemical-dynamic
polishing (CDP) and chemical-mechanical polishing
(CMP) are used [1, 2]. Chemical etching based on the
chemical dissolution processes is one of the main
technological operations in the chemical treatment of
semiconductor single crystals and thin films, which are
widely used in manufacturing of different semiconductor
devices and integrated circuits. The knowledge of kinetic
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 217-223.
doi: https://doi.org/10.15407/spqeo20.02.217
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
218
behavior, mechanism, and nature of semiconductor
dissolution is the most important factors for selection of
corresponding solution composition for polishing and
chemical cutting. High resolving power of some etchants
allow their usage on different phases of the substrate
treatment, but for these purposes, it is necessary to
develop the etchants corresponding to the removed
material, surface roughness, and some other parameters
[3]. However, there are technological problems related
to technology of treatment and the choice of optimal
polishing etchants compositions. Little information on
chemical polishing of PbTe and Pb1–xSnxTe that can be
practically applied to solve these problems exists in the
scientific and technical literature. All etching compo-
sitions used for this purpose can be classified as follows:
etchants based on bromine or iodine compounds, the so-
called bromine (iodine)-containing and bromine
(iodine)-emerging, as well as etchants based on other
compounds.
2. Etchant compositions based on iodine compounds
For chemical etching, composition of etchant solution,
its oxidative capacity, and rate of dissolution of
interaction products are very essential factors. To select
the optimal composition of etchants and research the
kinetics of chemical etching of lead chalcogenides, there
were performed preliminary studies of samples etching
in acid and alkaline solutions with elementary I2 as
oxidant [4]. Lead chalcogenides are not dissolved in HCl
and NaOH aqeous solutions in the absence of oxidant,
which is probably caused by the nature of covalent
chemical bonds in these compounds. Most of the
investigated solutions acted on the samples surface at the
dissolution forming thin layers or significant sediment,
indicating that the rate of dissolution is limited by the
etching of oxidation products. The surfaces of lead
chalcogenides were clean and shiny only after their
treatment in alkaline iodine solutions.
The kinetics of PbSe, PbTe and PbxSn1–x(Se,Te)
solid solutions chemical etching in alkaline iodine
solutions were investigated in [4]. The 0.015, 0.03, and
0.06 M iodine solutions in 12.5 M NaOH were used for
experiments. The samples were preliminary polished
with M 14 and M 7 powders and then etched in the
mentioned etchant at 60…70 °С. The surface state after
etching was monitored with a MIM-7 metallographic
microscope. The rate of PbSe and PbTe dissolution in
these solutions versus temperature and iodine
concentration changed within 10–9…10–10 mol/(cm2·s)
and increased with mixture stirring. The etchant solution
of 0.015 М I2 in 12.5 М NaOH was the most optimal
concerning quality of surface obtained. The surface of
PbTe becomes clean and bright after treatment by this
etchant, and grain boundaries were exposed on the
polished Pb1–xSnxTe surface. It was determined that
dissolution of PbTe in this solution under stirring is
controlled by the rate of the oxidation with an activation
energy of Еа = 19.5 kJ/mol, and ns/nτ ≈ 1 (where ns and
nτ are the number of particles per square centimeter of
the surface in stirred and unstirred solutions,
respectively), i.e., nearly the entire sample surface
participates in the dissolution process. The PbTe
dissolution rate in stirred solution is half an order of
magnitude higher than in unstirred solutions. A partial
replacement of lead for tin (8…10 at.%) in PbTe
increases the dissolution rate 1.2·10–9 mol/(cm2·s) for
PbTe and 2.8·10–9 mol/(cm2·s) for Pb0.8Sn0.2Te by more
than two times and shifts the dissolution process into the
transitional region.
An etchant containing NaOH (5 g), I2 (0.2 g), and
Н2О (10 ml) was also used for PbTe etching [5]. The
etching was performed on the PbTe (100) cleavage
surface for 5 min under heating up to 95 °С, thereupon
the wafers were washed with distilled water and
carefully dried using filter paper. As a result of etching,
pyramidal etching pits were formed on the samples
surface.
As the solvents of elementary iodine can be used
not only NaOH, but organic compounds and other
substances, too. Practical meaning for being used in the
etching compositions at the semiconductor surface is
confirmed to such solvents of iodine as HI, KI and some
others.
Solutions of I2 in methanol were used for the
chemical-mechanical treatment of Pb1–xSnxTe solid
solutions grown by the Czochralski method when
forming the laser heterostructures [6]. p-type samples
with the carrier concentration close to 5·1016 cm–3 and
dislocation density 107 cm–2 were used for the
experiments. Wafers of 6.0×6.0×0.4 mm in size and
oriented in the direction (100) were polished with
alumina powder and after that were etched in an iodine–
methanol solution under stirring for 15 s.
Chemical etching of the PbTe and Pb1–xSnxTe solid
solutions single crystals were performed using the disk
rotating method and iodine solution in
dimethylformamide [7]. The dependences of their
etching rates versus etchant composition, temperature,
stirring speed and the time of solution ageing were
studied. The most reasonable application of solutions
containing 6 to 18 wt.% of I2 in DMF is for formation of
polishing etching compositions for PbTe and
Pb0.83Sn0.17Te surface treatment.
3. Etchants based on bromine compounds
(bromine-containing etchant solutions)
Solutions of elemental bromine in organic and inorganic
solvents (ethanol, methanol, dimethylformamide,
hydrobromic acid, etc.) are most frequently used for the
surface etching of the PbTe and Pb1–xSnxTe solid
solutions. These compositions possess polishing proper-
ties, and their etching rate is limited by the diffusion
stage of heterogeneous interaction. The reason for this is
that the bromine oxidation of the surface layer of the
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 217-223.
doi: https://doi.org/10.15407/spqeo20.02.217
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
219
semiconductors leads to formation of bromides, which
are readily soluble in water and various organic
solvents.These mixtures are characterized by rather high
dissolution rates of PbTe and Pb1–xSnxTe, and their
components are volatile and toxic substances. In
particular, in [8] chemical polishing of PbTe samples
was spent using etchant containing 5 vol.% of Br2 in
HBr. The authors investigated the РbTe (100) undoped
single crystals of the n-type conductivity with the carrier
concentration n = 3.2⋅1017 cm–3 and average density of
dislocations 3.6·10–5 cm–2. Before laser irradiation, the
samples were first mechanically polished using 1/0 ASM
paste, and then they were chemically polished to remove
the damaged layer. This solution was also used for
chemical etching of PbTe and Pb1–xSnxTe solid solutions
in [9]. When using the bromine etchant solutions in
hydrobromic acid, it is essential for obtaining surface
quality of РbTe and PbxSn1–xTe to choose the necessary
concentration of bromine and a rate of solution mixing.
At the content of Br2 in etching mixture less than
1 vol.%, as well as at the decreasing intensity of solution
mixing, the samples were covered with a layer of the
black interaction products. With addition of water to the
etchant, the samples were covered by the the yellow
film, for which dissolution the authors recommended
treatment by boiling 50% solution of NaOH and dilute
HCl.
The etchant containing 8 vol.% Br2 in HBr was
used for chemical etching of PbxSn1–xTe in [10].
According to the data of Raman spectroscopy, formation
of ТеО2 and Те on the sample surface after chemical
etching was observed. Under the subsequent treatment of
the samples in boiling 50% NaOH solution and dilute
HCl, only Те was detected on the surface. For chemical
etching of the PbTe surface, a solution of Br2:HBr:H2O
(volume ratio 1:40:40) can be also used [11].
Pb1–xSnxTe (100) wafers cut from Bridgman grown
ingots were mechanically polished with the solution of
2% Br2 in НBr for removing residual lap damage before
preferential etching to develop defects and pits [5]. For
polishing the PbTe crystals, the solution of 5 vol.%
Br2 + 95 vol.% НBr was used [12]. Etching was carried
out for 1 min followed by treatment with 30% KOH
(t ~40 °С) for 20 min and washing by bidistilled water.
Pb1–xSnxTe [100] wire-like crystals with the diameter
from 10 to 60 mm were etched in the mixture containing
10 parts of the (5 vol.% Br2 + 95 vol.% НBr) solution
and one part of toluene. Toluene contributes to the
intensity of dissolution and eliminates formation of
oxide film on the sample surface. Polishing was
completed by thorough washing with acetone and then
with deionized water. After that, the samples were
immersed into a 10% HBr solution at the temperature
18…20 °C for 10 to 30 s. With a view to avoid
formation of an oxide film, the samples were
immediately subjected to contact nickel plating in a
solution containing hydrobromic acid and nickel
chloride.
Wire-like crystals of the indium doped p- and n-
type Pb0.8Sn0.2Te solid solution obtained by sublimation
in silica capillaries with an inner diameter of 10 to
120 μm and the length of about 20 cm were investigated
in [14]. The X-ray examination showed that these
crystals grew mainly along the crystallographic direction
(100); a uniform distribution of indium impurity along
their length was observed. Their structure was more
perfect than that of bulk crystals grown using a similar
method. After chemical-mechanical polishing, the
samples were etched with a mixture containing 10 parts
of (95% HBr + 5% Br2) solution and one part of toluene.
The use of this etchant for the chemical polishing of
indium doped lead-tin telluride wire-like crystals ensures
obtaining the mirror-like smooth surfaces without any
oxide film. This is due to the fact that the composition of
the proposed solution contains toluene governing the
intensity of dissolution.
4. Bromine-emerging etchants for chemical-
mechanical and chemical-dynamic polishing
PbTe and Pb1–xSnxTe single crystals
As bromine-containing etchants are often used for
chemical treatments of the PbTe and Pb1–xSnxTe single
crystals surface, it is practical to use them as etchant
compositions for the chemical treatment of
semiconductor materials in liquid active media, in which
the halogens are formed as a result of chemical
interaction of initial components in the etchant
composition [3]. For example, we take H2O2 as oxidizer
and HBr as a halogen-containing compound, and
bromine can be formed as a result of the following
chemical reaction:
H2O2 + 2HBr = Br2 + 2H2O.
It is necessary to note that hydrogen peroxide has
the biggest oxidizing potential and the lowest ionization
constant among the used oxidizing agents [2]. H2O2
exhibits weak acidic properties in aqueous solutions and
in combination with hydrohalogenic acids can generate
etchants for PbTe and based on it solid solutions with
small etching rates and good polishing properties.
As an additional solvent, some organic acids,
ethylene glycol or dimethylformamide can be used, and
the evolving halogens are partly dissolved in them.
Moreover, these additional solvents can regulate the
halogen generated, decrease the etching rate, and
facilitate dissolution of the forming surface reaction
products. Recently, for chemical polishing of PbTe and
Pb1–xSnxTe solid solutions single crystals, as the etchants
there were developed promising new solutions based on
H2O2–HBr system, where bromine is released as a result
of interaction of the initial components and dissolved in
an excess hydrobromic acid. The bromine emerging
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 217-223.
doi: https://doi.org/10.15407/spqeo20.02.217
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
220
etching compositions are more convenient for practical
aims. These solutions are more stable in time, in
comparison with bromine-containing solutions, because
the concentration of the active component – bromine –
which is formed changes slowly. Also, the bromides
formed during oxidation of the crystal surface layers
promote transition of dissolution process into the
diffusion region. In these bromine-emerging etchants,
the kinetics of chemical dissolution of PbTe and
Pb1–xSnxTe semiconductor crystals was studied.
Bridgman-grown PbTe and the Pb0.83Sn0.17Te and
Pb0.8Sn0.2Te (II) solid solutions single crystals and also
vapor-grown Pb0.8Sn0.2Te (I) single crystals (the samples
of dimensions 5.0×7.0×1.5 mm were used) [15-25]. The
peculiaritues of chemical-dynamic polishing of PbTe
and Pb1–xSnxTe crystals in Н2О2–НBr (44 %) etchant
compositions were studied, and it was ascertained that
the increase of Sn content in the Pb1–xSnxTe solid
solutions leads to a slight increase of the etching rate,
but the regions of polishing solutions were without
changes [15]. The most attractive polishing solutions for
the chemical-dynamic polishing of the single crystals are
those containing 2 to 8 vol.% Н2О2 in HBr, with the
etching rates 3.8 to 17.2 µm/min.
It was found [6, 7] that using the various con-
centrations of HBr (35, 40, 44, and 48%) in the etching
compositions H2O2–HBr does not substantially influence
the etching rate of the PbTe and Pb1–xSnxTe crystal.
However, the concentration range of polishing solutions
was enlarged, and quality of polishing was improved
when using more concentrated hydrobromic acid. It was
shown that, for formation of the polishing etchants for
the chemical-dynamic treatment, it is best to use 48%
HBr; based on it etching compositions have average
etching rates 1.0 to 17.0 μm/min and good polishing
properties within the concentration range of 2 to
10 vol.% Н2О2 in HBr. It was also developed a scheme
of chemical surface treatment which includes cleaning
the wafers with organic solvents, etching, and final
washing in solutions that readily dissolve both residual
etchant compositions and chemical reaction products.
It was also investigated the chemical-mechanical po-
lishing PbTe and Pb1–xSnxTe wafers surface with using
H2O2–HBr/ethylene glycol (EG) solutions, which ensured
etching rates within the range 0.5 to 80.0 μm/min [18].
Using the same components, it is possible to form
polishing etching mixtures with the required etching rates
and to apply them in various purposes. So, etchants with a
material removal rate of more than 26…80 μm/min are
suitable for removal of the layer damaged by abrasive
machining from the PbTe and Pb1–xSnxTe solid solutions
surface as well as for rapid and controlled thinning the
wafers. Etchants with polishing rates 10 to 15 µm/min can
be used for the controllable thinning the plates to the
given thickness, at the same time the flatness is retained.
Polishing compositions with the vpol = 0.5…5.0 µm/min
may be used for the controllable removal of thin layers
from the single crystals PbTe and Pb1–xSnxTe surface by
using the CMP method. The authors emphasize that this
approach allows reducing the duration of semiconductor
chemical treatment and simplifies washing the plates, as
in all cases the etchants are composed of the same
components taken in various ratios. The surface of the
PbTe and Pb1–xSnxTe samples after polishing was studied
by microstructural analysis, X-ray diffraction and electron
microscopy.
The method of high quality polishing PbTe and
Pb1–xSnxTe single crystals surfaces includes their mecha-
nical grinding and CMP the semiconductor wafers by the
etchant with the next ratio of components (vol.%)
(4…8) Н2О2:(72…76) HBr:(the rest) ethylene glycol for
2 to 3 min. After that, additional chemical-dynamic po-
lishing was carried out with the etchant of the composi-
tions (vol.%):(2…10) Н2О2:(48…98) HBr:(0…50) ethy-
lene glycol for 2 to 3 min.
The chemical etching of PbTe and Pb1–xSnxTe solid
solutions single crystals by bromine emerging etchants
in the following system Н2О2–НBr–EG [20], Н2О2–
НBr–СН3СООН [21], Н2О2–НBr–С4Н6О6 [22], Н2О2–
НBr–С2Н2О4 [23], H2O2–HBr–С3Н6О3 [24] and H2O2–
HBr– С6Н8О7 [25] has been also studied. The diagrams
“etchant composition – etching rate of semiconductor”
for the H2O2–HBr–organic acid systems, in which the
bromine-evolving etchants are formed, were constructed
using mathematical simulation of the experiment. These
diagrams are usefull for the comparison of different
etchant compositions by their etching rates and selection
of the best etchant for the given semiconductor. These
diagrams also show the concentration regions of
polishing and nonpolishing solutions. It has been
ascertained that the etching rates of the abovementioned
single crystals in these solutions are relatively low (1.5 ≤
Vpol ≤ 18.0 µm/min), and dissolution in the polishing
solutions proceeds according to the diffusion
mechanism. The present results demonstrate that, during
dissolution of the semiconductor materials under
consideration in the solutions, even slight changes in the
etch rate are accompanied by a decrease in the
dimensions of the region of polishing solutions in the
following order: PbTe ≈ Pb0.83Sn0.17Te → Pb0.8Sn0.2Te
[20-22, 24, 25]. The regions of polishing solutions for
all crystals have been shown to be essentially identical
in dimensions and position: 2…10 vol.%
H2O2:48…98 vol.% HBr:0…50 vol.% C2H2O4 [23]. So,
bromine evolving etching compositions based on hydro-
gen peroxide, hydrobromic acid and organic component
(ethylene glycol acetate, tartaric, oxalic, lactic and citric
acid), which are characterized by good polishing proper-
ties, could be proposed for the chemical treatment of
PbTe and Pb1–xSnxTe single crystals. High quality of the
obtained surfaces has been demonstrated by microstruc-
tural analysis and scanning electron microscopy of the
PbTe and Pb1–xSnxTe solid solutions surface after the
chemical-dynamic treatment.
Polishing etchant that can be used for the PbTe and
Pb1–xSnxTe single crystals surface treatment of semicon-
ductor and their conditions of use are summarized in
Table.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 217-223.
doi: https://doi.org/10.15407/spqeo20.02.217
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
221
Polishing etchant for the chemical treatment of the semiconductor PbTe and Pb1–xSnxTe surface
№ Semicon-
ductor
Etchant composition Conditions Comments Ref.
1 PbTe 2% Br2–CH3OH The sample was post-processed with
0.25 μm diamond powder and 0.03 μm
silica suspension polishing, etching
τ = 2 min.
Polishing [26]
2 PbTe 40 P K2Cr2O7 (sa-
turated solution) –
9 P НNO3 (conc.)
Mechanical polishing samples Al2O3
(0.25 μm); washing: water, methanol
Polishing [27]
3 PbTe 100 ml H3PO4
(88%) –10 g H2CrO4
90…105 °С, 4…6 min, 6…20 V, 3 А/сm2 Electropolishing [28]
4 PbTe 20 g KOH –
35 ml glycerol –
20 ml С2Н5ОН –
45 ml H2O
25 °С, 5…15 min, 6 V, 0.2 А/сm2 mixing
the electrolyte magnetic stirrer
(75…200 min–1), anode slow rotation
around the vertical axis (4 min–1).
Washing: water → НNO3 (1:10) → water
for 2-3 s
Electropolishing.
Cathode – platinum
[28]
5 PbTe,
Pb0.73Sn0.17Te
І2–DMF Etchants for CDP. Optimal conditions:
tCDP ≈ 25 °С, τ ≈ 2…3 min.
Washing: Н2О → 15% NaOH → Н2О →
HCl (conc.) → Н2О for 30 s
Mirror-like surface.
VCDP ranges from 3.5 up to
15.0 μm/min. The process
dissolution is limited by the
diffusion stages.
[7]
6 PbTe, PbSe K2Cr2O7 (saturated
solution) –
11.7 N НСІ
1:1
Dissolution rate ranges from
5·10–8 to 1·10–8 mol/cm2·s.
Dissolution occurs in the
transition region, dominated
diffusion.
[4]
7 PbTe, PbSe 16 N HNO3–
СН3СООН
4:1
Polishing brilliant surfaces [4]
8 PbTe, PbSe,
PbxSn1–x
(Se, Te)
0.015 (0.03, 0.06)
М І2
in 12.5 М NaOH
Optimal conditions for PbSe and PbTe:
0.015 mol. І2 in 12.5 М NaOH. Dissolution
PbTe limited by the speed of oxidation and
the entire surface is etched sample.
Formed clean and shiny
surface of lead chalcogenides.
Dissolution rate ranges from
10–9 to 10–10 mol/cm2·s
[4]
9 PbTe NH4OH–H2O2 The samples were mechanically polished
with alumina, degreased with trichloro-
ethylene, and rinsed with acetone, ethanol,
and deionized water in turn prior to
chemical treatments.
Polishing [29]
10 PbTe 0.8 m/l
K3[Fe(CN)6]–
0.6–0.05 m/l
NaOH–
100 g/l glycerol
The mechanical polishing with diamond
(grain sizes 6; 3; 1 μm) or alumina.
As special cleaning with trichlorethylene,
aceton, ethanol and high purified water.
The sample preservation was carried out in
air or under high purified water followed by
vacuum at 1.3·10–6 Pa.
Chemical-mechanical
polishing
[30]
11 PbTe;
Pb1–xSnxTe
0.1≤х≤0.125
І2–CH3OH Etchants for CMP Mirror-like surface.
Single crystals grown
by the Czochralski pulling
method
[6]
12 PbTe,
Pb1–xSnxTe
х≤0.03
6 P Br2 – 100 P
conc. HBr
Room temperature.
With continuous agitation etchant
Polishing surfaces.
Speed polishing ≈ 20 μm/min
[31]
13 PbTe;
Pb1–xSnxTe
x = 0.2; 0.17
35% H2O2:40, 44,
48% HBr
Etchants for CDP.
Optimal conditions: tCDP ≈ 20…25°С,
τ ≈ 3…5 min, the rotation speed of disc
γ = 86 rpm.
Washing: Н2О → 15 % NaOH →
Н2О → HCl (conc.) → Н2О for 30 s
Mirror-like surface.
Dissolution rate VCDP ranges
from 4.0 up to 17.0 μm/min.
The process dissolution is
limited by the diffusion
stages.
[15,
16,
17]
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 217-223.
doi: https://doi.org/10.15407/spqeo20.02.217
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
222
14 PbTe;
Pb1–xSnxTe
х = 0.2; 0.17
35% H2O2:40%
HBr:EG
Etchants for CMP.
Optimal conditions: tCMP ≈ 20°С, τ ≈ 2 min.
Washing:
Н2О → 15 % NaOH → Н2О → HCl
(conc.) → Н2О for 30 s
Mirror-like surface.
Dissolution rate VCMP ranges
from 0.5 up to 80.0 μm/min
[18]
15 35% H2O2:48%
HBr:EG
[19,
20]
16 35% H2O2:48%
HBr:80% acetic acid
[21]
17 35% H2O2:48%
HBr:40% tartaric
acid
[22]
18 35% H2O2:48%
HBr:8% oxalic acid
[23]
19 35% H2O2:48%
HBr:80% lactic acid
[24]
20
PbTe;
Pb1–xSnxTe
x = 0.2; 0.17
35% H2O2:48%
HBr:40% citric acid
Etchants for CDP.
Optimal conditions: tCDP ≈ 25 °С,
τ ≈ 2…3 min,
the rotation speed of disc γ = 86 rpm.
Washing: Н2О → 15 % NaOH →
Н2О → HCl (conc.) → Н2О for 30 s
Mirror-like surface.
Dissolution rate VCDP ranges
from 1.5 up to 18.0 μm/min.
The process dissolution is
limited by the diffusion
stages.
[25]
21 PbxSn1–x
(Se, Te)
4 P NaOH (4 N) –
1 P Н2О2 (30%)
Chemical etching [4]
22 PbxSn1–x
(Se, Te)
HNO3:Н2О
1:1
Chemical etching [4]
Comments: EG – ethylene glycol.
5. Conclusions
The analysis of literature data shows that for forming the
polished surface of the PbTe and Pb1–xSnxTe crystals
mainly bromine (iodine)-containing etchants have been
used, but the physical-chemical interaction of PbTe and
Pb1–xSnxTe single crystal with the above etchants has
been studied not enough.
It was shown that the solutions of Br2 in HBr,
which are characterized by good polishing properties,
are mostly used for the surface treatment of PbTe and
Pb1–xSnxTe semiconductors. However, bromine-
containing etchants, along with their good polishing
properties, have some disadvantages. Among them, it is
necessary to note a significant toxicity of elemental
bromine and technological difficulties associated with its
practical application. To avoid these limitations, it is
better to use bromine evolving etching compositions, in
which bromine is formed as a result of chemical
interaction of initial components in the etchant
composition (H2O2 and HBr); this bromine is dissolved
in excess of hydrobromic acid. The kinetic peculiarities
of PbTe and Pb1–xSnxTe single crystal etching for such
etchant have been investigated. The prospects of their
use for forming the polished surface of PbTe and
Pb0.83Sn0.17Te and Pb0.8Sn0.2Te solid solutions single-
crystal plates have been shown.
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|
| id | nasplib_isofts_kiev_ua-123456789-214929 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T11:33:49Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Malanych, G.P. 2026-03-04T12:51:52Z 2017 Polishing etchant compositions for the chemical treatment of the PbTe and Pb₁₋ₓSnₓTe solid solutions single crystals and methods for their processing. Review / G.P. Malanych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 217-223. — Бібліогр.: 31 назв. — англ. 1560-8034 PACS: 68.55.J-, 77.84.Bw, 81.05.Hd, 81.65.Cf, 81.65.Ps https://nasplib.isofts.kiev.ua/handle/123456789/214929 https://doi.org/10.15407/spqeo20.02.217 The review of works devoted to the use of polishing etchant composition for chemical treatment of the PbTe and Pb₁₋ₓSnₓTe solid solutions single crystals, and methods for their processing. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Polishing etchant compositions for the chemical treatment of the PbTe and Pb₁₋ₓSnₓTe solid solutions single crystals and methods for their processing. Review Article published earlier |
| spellingShingle | Polishing etchant compositions for the chemical treatment of the PbTe and Pb₁₋ₓSnₓTe solid solutions single crystals and methods for their processing. Review Malanych, G.P. |
| title | Polishing etchant compositions for the chemical treatment of the PbTe and Pb₁₋ₓSnₓTe solid solutions single crystals and methods for their processing. Review |
| title_full | Polishing etchant compositions for the chemical treatment of the PbTe and Pb₁₋ₓSnₓTe solid solutions single crystals and methods for their processing. Review |
| title_fullStr | Polishing etchant compositions for the chemical treatment of the PbTe and Pb₁₋ₓSnₓTe solid solutions single crystals and methods for their processing. Review |
| title_full_unstemmed | Polishing etchant compositions for the chemical treatment of the PbTe and Pb₁₋ₓSnₓTe solid solutions single crystals and methods for their processing. Review |
| title_short | Polishing etchant compositions for the chemical treatment of the PbTe and Pb₁₋ₓSnₓTe solid solutions single crystals and methods for their processing. Review |
| title_sort | polishing etchant compositions for the chemical treatment of the pbte and pb₁₋ₓsnₓte solid solutions single crystals and methods for their processing. review |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214929 |
| work_keys_str_mv | AT malanychgp polishingetchantcompositionsforthechemicaltreatmentofthepbteandpb1xsnxtesolidsolutionssinglecrystalsandmethodsfortheirprocessingreview |