Impact of traps on current-voltage characteristic of ⁺--⁺ diode
A model of ⁺--⁺ diode is analyzed using analytical and numerical methods. First, a phase-plane analysis was conducted, which was aimed at further calculations for low and high injection approximations. A numerical method was used to calculate changes in the field, bias, and concentration throughout...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2017 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/214930 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Impact of traps on current-voltage characteristic of ⁺--⁺ diode / P.M. Kruglenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 210-216. — Бібліогр.: 16 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | A model of ⁺--⁺ diode is analyzed using analytical and numerical methods. First, a phase-plane analysis was conducted, which was aimed at further calculations for low and high injection approximations. A numerical method was used to calculate changes in the field, bias, and concentration throughout the diode for different current values. Expected depletion of free-charge carriers near the anode and enrichment near the cathode was observed. Current-voltage characteristics were built for different concentrations of traps in the base. An increasing bias for the same value of current with increasing trap concentration was predicted.
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| ISSN: | 1560-8034 |