Impact of traps on current-voltage characteristic of ⁺--⁺ diode
A model of ⁺--⁺ diode is analyzed using analytical and numerical methods. First, a phase-plane analysis was conducted, which was aimed at further calculations for low and high injection approximations. A numerical method was used to calculate changes in the field, bias, and concentration throughout...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2017 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/214930 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Impact of traps on current-voltage characteristic of ⁺--⁺ diode / P.M. Kruglenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 210-216. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862600690462883840 |
|---|---|
| author | Kruglenko, P.M. |
| author_facet | Kruglenko, P.M. |
| citation_txt | Impact of traps on current-voltage characteristic of ⁺--⁺ diode / P.M. Kruglenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 210-216. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A model of ⁺--⁺ diode is analyzed using analytical and numerical methods. First, a phase-plane analysis was conducted, which was aimed at further calculations for low and high injection approximations. A numerical method was used to calculate changes in the field, bias, and concentration throughout the diode for different current values. Expected depletion of free-charge carriers near the anode and enrichment near the cathode was observed. Current-voltage characteristics were built for different concentrations of traps in the base. An increasing bias for the same value of current with increasing trap concentration was predicted.
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| first_indexed | 2026-03-21T12:40:38Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-214930 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T12:40:38Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kruglenko, P.M. 2026-03-04T12:52:08Z 2017 Impact of traps on current-voltage characteristic of ⁺--⁺ diode / P.M. Kruglenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 210-216. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/214930 https://doi.org/10.15407/spqeo20.02.210 A model of ⁺--⁺ diode is analyzed using analytical and numerical methods. First, a phase-plane analysis was conducted, which was aimed at further calculations for low and high injection approximations. A numerical method was used to calculate changes in the field, bias, and concentration throughout the diode for different current values. Expected depletion of free-charge carriers near the anode and enrichment near the cathode was observed. Current-voltage characteristics were built for different concentrations of traps in the base. An increasing bias for the same value of current with increasing trap concentration was predicted. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Impact of traps on current-voltage characteristic of ⁺--⁺ diode Article published earlier |
| spellingShingle | Impact of traps on current-voltage characteristic of ⁺--⁺ diode Kruglenko, P.M. |
| title | Impact of traps on current-voltage characteristic of ⁺--⁺ diode |
| title_full | Impact of traps on current-voltage characteristic of ⁺--⁺ diode |
| title_fullStr | Impact of traps on current-voltage characteristic of ⁺--⁺ diode |
| title_full_unstemmed | Impact of traps on current-voltage characteristic of ⁺--⁺ diode |
| title_short | Impact of traps on current-voltage characteristic of ⁺--⁺ diode |
| title_sort | impact of traps on current-voltage characteristic of ⁺--⁺ diode |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214930 |
| work_keys_str_mv | AT kruglenkopm impactoftrapsoncurrentvoltagecharacteristicofdiode |