Impact of traps on current-voltage characteristic of ⁺--⁺ diode

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2017
• Main Author: Kruglenko, P.M.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/214930
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Impact of traps on current-voltage characteristic of ⁺--⁺ diode / P.M. Kruglenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 210-216. — Бібліогр.: 16 назв. — англ.

A model of ⁺--⁺ diode is analyzed using analytical and numerical methods. First, a phase-plane analysis was conducted, which was aimed at further calculations for low and high injection approximations. A numerical method was used to calculate changes in the field, bias, and concentration throughout...