Borblik, V. L., Shwarts, Y. M., Shwarts, M. M., & Aleinikov, A. B. (2017). New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Borblik, V. L., Yu. M. Shwarts, M. M. Shwarts, та A. B. Aleinikov. "New Evidence of the Hopping Nature of the Excess Tunnel Current in Heavily Doped Silicon - Diodes at Cryogenic Temperatures." Semiconductor Physics Quantum Electronics & Optoelectronics 2017.
Стиль цитування MLA (8-ме видання)Borblik, V. L., et al. "New Evidence of the Hopping Nature of the Excess Tunnel Current in Heavily Doped Silicon - Diodes at Cryogenic Temperatures." Semiconductor Physics Quantum Electronics & Optoelectronics, 2017.