APA (7th ed.) Citation

Borblik, V. L., Shwarts, Y. M., Shwarts, M. M., & Aleinikov, A. B. (2017). New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures. Semiconductor Physics Quantum Electronics & Optoelectronics.

Chicago Style (17th ed.) Citation

Borblik, V. L., Yu. M. Shwarts, M. M. Shwarts, and A. B. Aleinikov. "New Evidence of the Hopping Nature of the Excess Tunnel Current in Heavily Doped Silicon - Diodes at Cryogenic Temperatures." Semiconductor Physics Quantum Electronics & Optoelectronics 2017.

MLA (8th ed.) Citation

Borblik, V. L., et al. "New Evidence of the Hopping Nature of the Excess Tunnel Current in Heavily Doped Silicon - Diodes at Cryogenic Temperatures." Semiconductor Physics Quantum Electronics & Optoelectronics, 2017.

Warning: These citations may not always be 100% accurate.