New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures
The new experimental data concerning the effect of a magnetic field on the electric properties of silicon diodes with high doping levels both in the emitter and base (conduction of which at low temperatures is determined by the excess tunnel current) have been analyzed. In addition to previous inves...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2017 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/214933 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures / V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts, A. B. Aleinikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 195-198. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862645562470301696 |
|---|---|
| author | Borblik, V. L. Shwarts, Yu. M. Shwarts, M. M. Aleinikov, A. B. |
| author_facet | Borblik, V. L. Shwarts, Yu. M. Shwarts, M. M. Aleinikov, A. B. |
| citation_txt | New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures / V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts, A. B. Aleinikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 195-198. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The new experimental data concerning the effect of a magnetic field on the electric properties of silicon diodes with high doping levels both in the emitter and base (conduction of which at low temperatures is determined by the excess tunnel current) have been analyzed. In addition to previous investigations of the influence of magnetic fields up to 9.4 T on this tunnel current at 4.2 K, now the measurements have been carried out up to 14 T at temperatures lower than the liquid helium temperature. Under these conditions, the transfer to saturation of the diode magnetoresistance was observed, which agrees with the results predicted theoretically for the hopping conduction via impurity centers in high magnetic fields.
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| first_indexed | 2026-03-21T13:44:55Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-214933 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T13:44:55Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Borblik, V. L. Shwarts, Yu. M. Shwarts, M. M. Aleinikov, A. B. 2026-03-04T12:53:05Z 2017 New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures / V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts, A. B. Aleinikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 195-198. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 72.20.Ee, 72.20.My, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/214933 https://doi.org/10.15407/spqeo20.02.195 The new experimental data concerning the effect of a magnetic field on the electric properties of silicon diodes with high doping levels both in the emitter and base (conduction of which at low temperatures is determined by the excess tunnel current) have been analyzed. In addition to previous investigations of the influence of magnetic fields up to 9.4 T on this tunnel current at 4.2 K, now the measurements have been carried out up to 14 T at temperatures lower than the liquid helium temperature. Under these conditions, the transfer to saturation of the diode magnetoresistance was observed, which agrees with the results predicted theoretically for the hopping conduction via impurity centers in high magnetic fields. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures Article published earlier |
| spellingShingle | New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures Borblik, V. L. Shwarts, Yu. M. Shwarts, M. M. Aleinikov, A. B. |
| title | New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures |
| title_full | New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures |
| title_fullStr | New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures |
| title_full_unstemmed | New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures |
| title_short | New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures |
| title_sort | new evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214933 |
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