New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• Hauptverfasser: Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M., Aleinikov, A. B.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214933
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures / V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts, A. B. Aleinikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 195-198. — Бібліогр.: 11 назв. — англ.

The new experimental data concerning the effect of a magnetic field on the electric properties of silicon diodes with high doping levels both in the emitter and base (conduction of which at low temperatures is determined by the excess tunnel current) have been analyzed. In addition to previous inves...