In–HgCdTe–In structures with symmetric nonlinear I–V characteristics for sub-THz direct detection
This paper reports on the development and investigations of In–Hg₁₋ₓCdxTe–In structures with symmetric nonlinear I–V curves that are sensitive to sub-terahertz radiation. It is shown that at low currents photoresponse of the detectors based on these structures is due to the presence of potential bar...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2017 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/214937 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | In–HgCdTe–In structures with symmetric nonlinear I–V characteristics for sub-THz direct detection / N.I. Kukhtaruk, V.V. Zabudsky, A.V. Shevchik-Shekera, N.N. Mikhailov, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 173-178. — Бібліогр.: 13 назв. — англ. |