In–HgCdTe–In structures with symmetric nonlinear I–V characteristics for sub-THz direct detection

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• ISSN: 1560-8034
• Hauptverfasser: Kukhtaruk, N.I., Zabudsky, V.V., Shevchik-Shekera, A.V., Mikhailov, N.N., Sizov, F.F.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214937
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: In–HgCdTe–In structures with symmetric nonlinear I–V characteristics for sub-THz direct detection / N.I. Kukhtaruk, V.V. Zabudsky, A.V. Shevchik-Shekera, N.N. Mikhailov, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 173-178. — Бібліогр.: 13 назв. — англ.

This paper reports on the development and investigations of In–Hg₁₋ₓCdxTe–In structures with symmetric nonlinear I–V curves that are sensitive to sub-terahertz radiation. It is shown that at low currents photoresponse of the detectors based on these structures is due to the presence of potential bar...