Title pages and contents
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2017 |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/214941 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Title pages and contents // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860272241317511168 |
|---|---|
| citation_txt | Title pages and contents // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| first_indexed | 2026-03-21T11:50:57Z |
| format | Article |
| fulltext |
ISSN 1560-8034
ISSN 1605-6582 (On-line)
ISSN 1606-1365 (CD-ROM)
National Academy of Sciences of Ukraine
V. Lashkaryov Institute of Semiconductor Physics
Technology Park “Semiconductor Technologies and Materials,
Optoelectronics and Sensor Technique”
Ukrainian Society for Optical Engineering
SEMICONDUCTOR PHYSICS
QUANTUM ELECTRONICS &
OPTOELECTRONICS
Volume 20, N 2
2017
Subscription index 10004
Registered by The State Committee for Informational Policy
and Broadcasting of Ukraine. Certificate № 4350
Published since 1998
© V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Department of optic and optoelectronic registering media,
V. Lashkaryov Institute of Semiconductor Physics
National Academy of Sciences of Ukraine
Web: www.journal-spqeo.org.ua
Editorial Board Address:
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone/Fax: +380 (44) 525 6205
E-mail: journal@journal-spqeo.org.ua
E-mail: journal@isp.kiev.ua
International Scientific Journal
SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS AND OPTOELECTRONICS
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Department of optic and optoelectronic registering media,
V. Lashkaryov Institute of Semiconductor Physics
National Academy of Sciences of Ukraine
Web: www.journal-spqeo.org.ua
Editorial Board Address:
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone/Fax: +380 (44) 525 6205
E-mail: journal@journal-spqeo.org.ua
E-mail: journal@isp.kiev.ua
International Scientific Journal
SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS AND OPTOELECTRONICS
EDITORIAL BOARD
EDITOR-IN-CHIEF
A.Ye. Belyaev V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv
DEPUTY EDITORS-IN-CHIEF
V.P. Kladko V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv
V.A. Kochelap V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv
M.V. Strikha V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv
EDITORIAL BOARD MEMBERS
I.V. Blonskii Institute of Physics, NASU, Kyiv, Ukraine
N.L. Dmitruk V. Lashkaryov Institute of Semiconductor Physics,
NASU, Kyiv, Ukraine
I.Z. Indutnyy V. Lashkaryov Institute of Semiconductor Physics,
NASU, Kyiv, Ukraine
V.I. Grygoruk T.G. Shevchenko National University,
Kyiv, Ukraine
R.V. Konakova V. Lashkaryov Institute of Semiconductor Physics,
NASU, Kyiv, Ukraine
V.G. Lytovchenko V. Lashkaryov Institute of Semiconductor Physics,
NASU, Kyiv, Ukraine
V.S. Lysenko V. Lashkaryov Institute of Semiconductor Physics,
NASU, Kyiv, Ukraine
A.G. Naumovets Institute of Physics, NASU, Kyiv, Ukraine
A.I. Nosich Institute for Radiophysics and Radio-
electronics, NASU, Kharkiv, Ukraine
P.F. Oleksenko V. Lashkaryov Institute of Semiconductor Physics,
NASU, Kyiv, Ukraine
V.V. Petrov Institute for Information Recording,
NASU, Kyiv, Ukraine
V.M. Poroshin Institute of Physics, NASU, Kyiv, Ukraine
I.V.Prokopenko V. Lashkaryov Institute of Semiconductor Physics,
NASU, Kyiv, Ukraine
O.G. Sarbei Institute of Physics, NASU, Kyiv, Ukraine
F.F. Sizov V. Lashkaryov Institute of Semiconductor Physics,
NASU, Kyiv, Ukraine
V.I. Sugakov V. Lashkaryov Institute of Nuclear Recearch, NASU,
Kyiv, Ukraine
P.M. Tomchuk Institute of Physics, NASU, Kyiv, Ukraine
M.Ya. Valakh V. Lashkaryov Institute of Semiconductor Physics,
NASU, Kyiv, Ukraine
O.I. Vlasenko V. Lashkaryov Institute of Semiconductor Physics,
NASU, Kyiv, Ukraine
Yu.I. Yakimenko National Technical University «KPI»,
Kyiv, Ukraine
V.M. Yakovenko Institute for Radiophysics and Radio-
electronics, NASU, Kharkiv, Ukraine
EXECUTIVE SECRETARY
A.A. Kudryavtsev V. Lashkaryov Institute of Semiconductor Physics, NASU, Kyiv, Ukraine
MANAGING EDITOR
S.O. Kostyukevych V. Lashkaryov Institute of Semiconductor Physics, NASU, Kyiv, Ukraine
INTERNATIONAL ADVISORY COUNCIL
M.S. Brodyn Institute of Physics, NASU, Kyiv,
Ukraine
M.L. Calvo Universidad Complutense de Madrid,
Spain
D. Flandre Institute of Information and
Communication Technologies, Belgium
F.J. Gamiz Perez Universitadad de Granada, Spain
S.V. Gaponenko Institute of Physics, Academy of Science,
Belorussia
W. Knap CNRS, France, Poland
Z.F. Krasilnik Institute for Physics of Microstructures,
RAS, Russia
A.P. Litvinchuk University of Houston, USA
St. Lucyszyn Imperial College London, United
Kingdom
H. Luth Forschungszentrum Julich, Institut fur
Halbleiter Nanoelectronik, Julich,
Germany
J.R. Morante Institute of Renewable Energy Catalonia,
Barcelona, Spain
N.G. Nakhodkin T.G. Shevchenko National University,
Kyiv, Ukraine
M.S. Soskin Institute of Physics, NASU, Kyiv,
Ukraine
G. Salamo University of Arkanzas, USA
D.R.T. Zahn Institute for Physics/Semiconductors,
Technische Universitat Chemnitz,
Germany
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 270-271.
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
270
Contents
153-158
Oxygen ion-beam modification of vanadium oxide
films for reaching a high value of the resistance
temperature coefficient
T.M. Sabov, O.S. Oberemok, O.V. Dubikovskyi,
V.P. Melnik, V.P. Kladko, B.M. Romanyuk,
V.G. Popov, O.Yo. Gudymenko, N.V. Safriuk
159-167
Surface enhanced imaging and IR spectroscopy of
the biological cells on the nanostructured gold film
G.I. Dovbeshko, O.P. Gnatyuk, S.O. Karakhim,
T.P. Doroshenko, V.R. Romanyuk
168-172
Concerning the depletion width of a radial p-n
junction and its influence on electrical properties
of the diode
V.L. Borblik
173-178
In–HgCdTe–In structures with symmetric
nonlinear I–V characteristics for sub-THz direct
detection
N.I. Kukhtaruk, V.V. Zabudsky, A.V. Shevchik-
Shekera, N.N. Mikhailov, F.F. Sizov
179-184
Nanostructuring the SiOx layers by using laser-
induced self-organization
O.V. Steblova, L.L. Fedorenko, A.A. Evtukh
185-190
London forces in highly oriented pyrolytic
graphite
L.V. Poperenko, S.G. Rozouvan, I.A. Shaykevich
191-194
Luminescent properties of fine-dispersed self-
propagating high-temperature synthesized
ZnS:Cu,Mg
Yu.Yu. Bacherikov, A.G. Zhuk, R.V. Kurichka,
O.B. Okhrimenko, A.V. Gilchuk, O.V. Shcherbyna,
M.V. Herkalyuk
195-198
New evidence of the hopping nature of the excess
tunnel current in heavily doped silicon p-n diodes
at cryogenic temperatures
V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts,
A. B. Aleinikov
199-203
Nanostructure of amorphous films
N.L. Dyakonenko, V.A. Lykah, A.V. Sinelnik,
I.A. Korzh, V.I. Bilozertseva
204-209
Analysis of a quantum well structure optical
integrated device
Sh.M. Eladl and M.H. Saad
210-216
Impact of traps on current-voltage characteristic
of n+-n-n+ diode
P.M. Kruglenko
217-223
Polishing etchant compositions for the chemical
treatment of the PbTe and Pb1–xSnxTe solid
solutions single crystals and methods for their
processing. Review
G.P. Malanych
224-230
Quantum-size effects in semiconductor
heterosystems
L.A. Matveeva, E.F. Venger, E.Yu. Kolyadina,
P.L. Neluba
231-234
High-frequency electromagnetic radiation of
germanium crystals in magnetic fields
G.V. Milenin, V.V. Milenin, R.A. Redko
235-239
Novel concepts of negative-n optics in master’s
level educational courses
G.Yu. Rudko
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 270-271.
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
271
240-245
Using nanosphere lithography for fabrication of a
multilayered system of ordered gold nanoparticles
V.I. Styopkin, V.R. Liakhovetskyi, V.I. Rudenko
246-249
Influence of X-ray irradiation on the optical
absorption edge and refractive index dispersion in
Cu6PS5I-based thin films deposited using
magnetron sputtering
I.P. Studenyak, M.M. Kutsyk, A.V. Bendak, V.Yu. Izai,
P. Kúš, M. Mikula
250-253
Transformation of impurity-defect centers in
single crystals CdTe:Cl under the influence of
microwaves
N.D. Vakhnyak, O.P. Lotsko, S.I. Budzulyak,
L.A. Demchyna, D.V. Korbutyak, R.V. Konakova,
R.A. Red’ko, O.B. Okhrimenko, N.I. Berezovska
254-258
Some new technology aspects for quantum enestor
through A3B5 multicomponent nanoepitaxy
V.I. Osinsky, I.V. Masol, N.N. Lyahova, N.O. Suhoviy,
M.C. Onachenko , A.V. Osinsky
259-261
Relaxation of photovoltage in ITO-Ge-Si
heterojunction with Ge nanostructured thin films
S.A. Iliash, Yu.V.Hyrka, S.V. Kondratenko,
V.S.Lysenko, Yu.M.Kozyrev, V.V.Lendel
262-267
The influence of physical and technological
magnetron sputtering modes on the structure and
optical properties of CdS and CdTe films
G.S. Khrypunov, G.I. Kopach, M.M. Harchenko,
A.І. Dobrozhan
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| id | nasplib_isofts_kiev_ua-123456789-214941 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T11:50:57Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | 2026-03-04T12:55:33Z 2017 Title pages and contents // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — англ. 1560-8034 https://nasplib.isofts.kiev.ua/handle/123456789/214941 en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Title pages and contents Article published earlier |
| spellingShingle | Title pages and contents |
| title | Title pages and contents |
| title_full | Title pages and contents |
| title_fullStr | Title pages and contents |
| title_full_unstemmed | Title pages and contents |
| title_short | Title pages and contents |
| title_sort | title pages and contents |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214941 |