The influence of the guest cavitation loading degree in fractal nanohybrids GaSe〈β-cyclodextrin〈FeSO₄〉〉 on the current passing and polarization processes. The giant “battery spin” effect at room temperature
The investigation results of clathrate properties GaSe〈β-cyclodextrin〈FeSO₄〉〉 of the hierarchical architecture with the fourfold expansion at different degrees of a guest cavitation loading have been presented. Based on the frequency dependence of the specific complex impedance, the changes of the i...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Цитувати: | The influence of the guest cavitation loading degree in fractal nanohybrids GaSe〈β-cyclodextrin〈FeSO₄〉〉 on the current passing and polarization processes. The giant “battery spin” effect at room temperature. / F.O. Ivashchyshyn, I.I. Grygorchak, O.I. Hryhorchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 375-381. — Бібліогр.: 25 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860283168838385664 |
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| author | Ivashchyshyn, F.O. Grygorchak, I.I. Hryhorchak, O.I. |
| author_facet | Ivashchyshyn, F.O. Grygorchak, I.I. Hryhorchak, O.I. |
| citation_txt | The influence of the guest cavitation loading degree in fractal nanohybrids GaSe〈β-cyclodextrin〈FeSO₄〉〉 on the current passing and polarization processes. The giant “battery spin” effect at room temperature. / F.O. Ivashchyshyn, I.I. Grygorchak, O.I. Hryhorchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 375-381. — Бібліогр.: 25 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The investigation results of clathrate properties GaSe〈β-cyclodextrin〈FeSO₄〉〉 of the hierarchical architecture with the fourfold expansion at different degrees of a guest cavitation loading have been presented. Based on the frequency dependence of the specific complex impedance, the changes of the impurity energy spectrum expanded matrix parameters as a result of forming the supramolecular ensembles on its basis are clarified. For some architectures, impedance, photo, and magneto responses showed the extraordinary behavior of the magnetoimpedance and photoconductivity, and also the giant negative photodielectric and the colossal magnetocapacitance effects at room temperature, which open new possibilities for their practical application.
|
| first_indexed | 2026-03-21T14:44:39Z |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 3. P. 375-381.
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
375
PACS 73.61.Ey, 77.22.Gm, 82.75.-z, 84.37.+q
The influence of the guest cavitations loading degree in fractal
nanohybrids GaSe〈β-cyclodextrin〈FeSO4〉〉 on the current passing
and polarization processes. The giant “battery spin” effect at room
temperature.
F.O. Ivashchyshyn1, I.I. Grygorchak1, O.I. Hryhorchak2
1Lviv Polytechnic National University, 12, Bandera Str., Lviv 79013, Ukraine
2Ivan Franko National University of Lviv, 8, Kyrylo and Mefodiy str., 79005 Lviv, Ukraine
Abstract. The investigation results of clathrate properties GaSe〈β-cyclodextrin〈FeSO4〉〉
of the hierarchical architecture with the fourfold expansion at different degrees of a guest
cavitations loading have been presented. Based on the frequency dependence of the
specific complex impedance, the changes of the impurity energy spectrum expanded
matrix parameters as a result of forming the supramolecular ensembles on its basis are
clarified. For some architecture, impedance, photo and magneto responses showed the
extraordinary behavior of the magnetoimpedance and photoconductivity and also the
giant negative photodielectric and the colossal magnetocapacitance effects at room
temperature, which open new possibilities of their practical application.
Keywords: layered semiconductor GaSe, β-cyclodextrin, “host-guest” system,
hierarchical architecture, impedance, Nyquist’s diagram, dielectric constant, tangent of
angle of electric losses, photodielectric effect, magnetocapacity, “battery-spin” effect.
Manuscript received 23.05.17; revised version received 00.00.17; accepted for
publication 00.00.17; published online 00.00.17.
1. Introduction
Like to other semiconductor materials, deep defect states
in the band gap of InGaAs are formed by doping with a
wide class of impurities [5]. These states may be
significantly complicated due to formation of dopant
pairs or their interaction with their own lattice defects.
Optical and electronic properties are studied by
photocurrent (PC) spectra and thermal activation effects
measurement [3]. However, thermally stimulated
conductivity (TSC) spectra of InGaAs-GaAs hetero-
structures with QW are not examined enough. According
to [1-3], distribution of localized states in
semiconductors is based on the multiple trapping model.
It was shown that peaks in the spectra TSC were
observed within the Despite the rapid development of
the supramolecular chemistry in the recent decade, there
are significantly a few publications aimed to studying
the physical properties of supramolecular architectures
and clathrates. Their analysis allowed concluding that
the research results of semiconductor clathrates as
phonon glasses, the most promising thermoelectric
materials, are the closest ones to practical application.
The solution of the Slack hypothesis [1, 2] about
formation of these structures, in which the weakly bound
atoms can oscillate in a limited volume and provide a
low thermal conductivity at high electrical conductivity,
is almost found [3]. As for the other physical aspects of
“host-guest” supramolecular ensembles, at first the
papers devoted to the electronic structure calculations
(see, e.g., [4]) or the systems with excitation energy
transfer [5] should be emphasized.
Recently, we [6] have synthesized the
supramolecular ensemble of a fundamentally new
architecture as subhost〈host〈guest〉〉, where the
organic/inorganic cavitate β-cyclodextrin (β-CD), and
ferrous sulphate serve as a guest content in the inorganic
MCM-41 SiO2-submatrix, forming the guest hierarchy in
this way. The colossal magneto capacitance effect and
the huge (almost tenfold) alternative-current (in the
103…106 Hz frequency range) negative magneto
resistance effect were detected in this supramolecular
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 3. P. 375-381.
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
376
ensemble at room temperature and weak magnetic fields
for the first time. These extraordinary properties of
hierarchical clathrates definitely actualize the further
research development, especially studying the
dependence of the physical processes passing on the
subhost matrix type and also clarifying the influence of
the cavitation loading degree on them. This paper is
devoted to these issues.
2. Conceptual fundamentals and methodology of
experiments
Taking into account the increasing interest to the
nanophotoelectronics and quantum coherent spintronics,
the set goal was achieved by replacing the molecular-
lattice dielectric SiO2-subhost with the photosensitive
quasi-2D semiconductor of gallium selenide (GaSe). On
its basis the clathrates with hierarchical architecture of
GaSe〈β-CD〈FeSO4〉〉 formed by the host contents
cavitation on a “host-guest” type were synthesized.
Single crystals GaSe grown with the Bridgman–
Stockbarger method had a brightly expressed layered
structure and p-type conductivity. The band gap (due to
the optical data) was 2.02 eV. It is well known [7] that
they are characterized by the presence of the so-called
“guest” positions oriented perpendicularly to
crystallographic axis C of the areas of weak van der
Waals forces. Inclusion of foreign ions, atoms or
molecules into the appointed intracrystalline intervals is
known as an intercalation phenomenon [8]. The absence
of dangling bonds on the surfaces provides a very low
surface recombination velocity. In addition, these single
crystals are highly photosensitive in a visible spectrum.
The organic cavitand, such as cyclodextrin of β-
form (β-CD), was used as an intermediate host. Its
unique structural feature, namely separation of
hydrophilic and hydrophobic groups, causes unusual
physical and chemical properties. The most important
among them is the ability of the selective and backward
binding of organic, inorganic, biological molecules,
forming the complexes of inclusions with the “key-lock”
type in this way. The large electron density inside the
cavity of β-CD can activate electrons of molecules of
“guests”, which leads to the changes in the spectral
properties of the included molecules as well as the β-CD
[9]. Iron (II) sulfate served as a substrate, which is
known precursor for the synthesis of nanomagnetite,
which cationic component has a large spin magnetic
moment.
Since neither β-cyclodextrin nor ferrous sulfate are
implemented into GaSe directly, the three-stage
intercalation-deintercalation technology described in
details in our paper [10] was used to form the
supramolecular ensembles, and as a result the fourfold
output matrix expansion degree was achieved. The
cavitate content increases in the extended GaSe matrixes
was achieved by the step-by-step intercalation of the
samples. The precise gravimetric and chemical analyses
were made at each stage.
The impedance measurements were made in the
direction of crystallographic axis C in the 10–3…106 Hz
frequency range by using the measuring complex
“AUTOLAB” of “ECO CHEMIE” (Holland), which is
equipped with computer software FRA-2 and GPES.
Removing the questionable points was made with
Dirichlet’s filter [10, 11]. The frequency dependences of
complex impedance (Z) were analyzed using the
graphic-analytical method in the software package
ZView 2.3 (Scribner Associates). Approximation errors
did not exceed 4%. The adequacy of the impedance
models built on the basis of the experimental data group
was confirmed completely by the random nature of
frequency dependences of the first-order remaining
differences [11, 12]. The investigated samples were
lightened with the visible light or the constant magnetic
field perpendicular to the nanolayers of 2.75 kОе tension
was applied to them.
3. The results and discussion
Fig. 1 shows the frequency dependences of the real
component of the complex specific impedance (Re Z(ω))
perpendicular to the nanolayers planes of the fourfold
extended GaSe, before and after implementing the
different amounts of cavitate β-CD 〈FeSO4〉. It is seen
that, at the room temperature (293 K), Re Z(ω) for the
initial extended matrix GaSe behaves as usual: the quasi-
horisontal infra low-frequency branch moves to the
declining one at higher frequencies, because of
contribution of charge carriers hopping on the localized
states at the Fermi level or the processes of exciting-
capturing them in the zones tails (or the delocalized
states zones) [13, 14]. The first inclusion of β-
CD〈FeSO4〉 (curve 2) causes to over 20-fold reduction of
Re Z(ω) in the mentioned range, mainly because of the
delocalized (zone) carriers. With further increasing the
amount of the guest cavitate loading (Q) in van der
Waals enhanced areas of GaSe, Re Z(ω) changes in a
non-monotonic way. Actually, the latter fact indicates
the prevailing role of the impurity energy spectrum
change versus the changes of the charge carriers
mobility perpendicular to the nanolayers. The constant
magnetic field of tension Н applied along the normal to
clathrate nanolayers GaSe〈β-СD〈FeSO4〉〉Q causes the
giant magnetoresistance effect (χ = 200…300%)
depending on Q (insertion in Fig. 1). In this case, the
change of sign ln χ causes linking its mechanism with
the change of impurity states density asymmetry above
and below the Fermi level, which is responsible for the
Zeeman localization (delocalization) of charge carriers.
This nature is inherent to La0.7Ba0.3MnO3 [15] at room
temperature and relatively mild magnetic fields. The
important practical value is that the photosensitivity
stays at a high level (ζ = ρdark /ρlight = 103) even after the
fourfold expansion of the initial matrix GaSe and
clathrate formation. As it follows from the insertion in
Fig. 1, this parameter increases with increasing Q.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 3. P. 375-381.
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
377
Fig. 1. Infra low-frequency dependences of the real part of the
specific impedance that is perpendicular to the layers of
GaSe〈β-CD〈FeSO4〉〉Q for Q = 3 (2), 7 (3) and 10 (4) mass.%,
measured at the temperature 293 K in darkness. (1) – extended
crystalline matrix. The magnetoresistance (left) and
photoresistant (right) effects are shown on the insertions.
The frequency dependences of the imaginary
specific complex impedance component GaSe〈β-
СD〈FeSO4〉〉Q perpendicular to the nanolayers are shown
in Fig. 2. It is seen that Im Z(ω) oscillates not only
because of the frequency change, but also it is non-
monotonic with regard to Q. Pay attention to the fact that
at Q = 7 mass.% its low-frequency region is in IV
inductive quadrant of the complex impedance plane. It
appears on the Nyquist diagram (Fig. 3, curve 2)
appropriately. This effect, known in the literature as a
phenomenon of a “negative” capacity, attracts attention
(e.g. [16, 17]) due to the possibility of its application in
nanoelectronics for creating non-gyrator nanolines delay.
We highlighted this issue for semiconductor clathrates of
the investigated class in papers [18, 19].
In a magnetic field, the low-frequency inductive
response is observed only for Q = 7 mass.% and gains an
extraordinary form (Fig. 3, curve 3), which on the
Nyquist chart is shown as a strong instability
(bifurcation of the frequency parameter) of Im Z(ω) in
the vicinity of frequency 0.2 < ω < 0.01 Hz. In this case,
the equivalent electrical scheme corresponds to the
branch of the Nyquist hodograph from the vicinity of
this frequency, and it is shown in the insertion to Fig. 3.
It’s worthy noting that the inductive feedback
causes also lighting for this value Q (insertion to Fig. 2).
The synthesized nanohybrids have also interesting
polarizing properties. Due to the practical meaning,
possibilities of their application for high-quality
capacitors in radio-frequency range is now analyzed, the
data representing the magnitude of electrical losses
tangent of angle less than 1 have been taken into
account. The range of frequencies is 102…106 Hz. In
general, variation of the cavitate content β-CD〈FeSO4〉
does not cause any significant changes in dielectric
susceptibility along the normal to nanolayers of the
synthesized supramolecular ensemble in the analyzed
frequency range neither in the frequency dependence nor
in the magnitude. An exception is for Q = 3 mass.%
degree of the guest loading, when a significant reduction
of ε at the frequencies up to 104 Hz (e.g., the 12-fold one
at the frequency close to 1 kHz) is observable.
The imposition of a magnetic field perpendicularly
to the nanolayers causes the magnitocapacitance effect,
which substantially depends on Q (Fig. 4). A similar
situation is realized at illumination. Since the observed
changes are conjugated with the abnormal frequency
dispersion (growth of ε with increasing the frequency),
there are all reasons to consider their nature to be caused
by the electronic energy spectrum [20]. In Fig. 4, one
can see that in the first case the huge magnitocapacitance
positive effect takes place. Its coefficient is
ε(0)
ε(0))ε( −
℘
H= , where ( )Hε and ( )0ε are the
dielectric permittivity in a magnetic field and without it,
accordingly, at Q = 3 mass.% it is the highest and
reaches 53200%. It opens the prospects of replacing the
traditional inductive heads used for reading information
from magnetic media with the capacitive
magnetoelectric elements that allows reducing the size
and energy dispersion in them. For comparison, δН for
TbMnO3 at temperature 3 K and the magnetic field value
of 7200 A/m is 10% [21]. Obviously, in this case the
HMC mechanism differs from the implemented one in
this work. Most likely, this mechanism could be
associated with Zeeman modification of the energy
spectrum, as it has been successfully made by the
authors of [15] for explaining the giant magneto-
resistance effect at room temperature in La0.7Ba0.3MnO3.
Fig. 2. Frequency dependences of the specific impedance
imaginary component perpendicular to the layers GaSe〈β-
CD〈FeSO4〉〉Q for Q = 3 (1), 7 (2) and 10 mass.% (3), measured
under the standard conditions. The measurement results at
illumination are shown in the insertion.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 3. P. 375-381.
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
378
Fig. 3. Nyquist’s chart for the direction perpendicular to the
nanolayers of the original extended matrix GaSe (1) and
clathrate GaSe〈β-CD〈FeSO4〉〉7 mass.% for normal conditions (2)
and magnetic field (3). The appropriate equivalent circuits are
shown in the insertion.
Fig. 4. The dielectric permeability change at frequency 1 MHz
in the constant magnetic field and when illuminating GaSe〈β-
CD〈FeSO4〉〉Q at Q = 3 (2), 7 (3) and 10 (4) mass.%. 1 –
primary matrix.
Due to the clathrate principle of the synthesized
nanohybrids structure organization with the supra-
molecular nature of “guest-host” interactions providing
the quasi-continuous distribution of the energy states in
the band gap of the host material, particularly in the
periodic field of coordination defects, it is possible to
understand the observed negative photo-dielectric effect,
when illuminating with the visible light, because it leads
to redistribution of the charge carriers on discrete levels,
to polarization of individual centres and changing the
density states [22].
As it follows from the parameters shown in Table,
the synthesized clathrates of hierarchical architecture
GaSe〈β-СD〈FeSO4〉〉Q can make the base for
hypercapacitant photo and magnetovaricaps of new
generation.
The one of the most extraordinary results is a
combination of giant magnitude of the dielectric
susceptibility and low (less than 1) magnitude of
electrical losses tangent of angle in the infra low-
frequency region in GaSe〈β-СD〈FeSO4〉〉Q = 7. Thus, at
ω = 10–3 Hz the value ε is 7⋅105.
Overall, the great importance of the dielectric
susceptibility without ferroelectric ordering in the quasi-
two-dimensional systems can be grounded as follows.
The one of the possible mechanisms that could
explain the described situation is proposed below. The
large magnitude of the dielectric susceptibility without
segnetoelectric arrangement in quasi-two-dimensional
systems can be related with the existence of two-
dimensional electron gas (2DEG) in the triangle-like
potential well on the border between semiconductor and
dielectric. This situation can be described using the
model shown in Fig. 5.
The imaginary electrode is the result of charge con-
servation. The charge of 2DEG should be compensated
by the charge on the imaginary electrode. Connection
between 2DEG and metallic electrode has a quantum
tunnelling nature. This connection causes the levelling of
the electrochemical potentials on these electrodes.
Table. Comparative parameters of magneto- and photosensitivity of the capacitive mode at the frequency 500 kHz.
Sample tg δ tg δH εH εH/ε0 tg δlight εlight εlight/εdark
GaSe〈β-CD〈FeSO4〉〉3 0.084 0.047 98000 37.5 0.274 1300 0.43
GaSe〈β-CD〈FeSO4〉〉7 0.006 0.028 9160000 533.0 0.112 18000 1.0
GaSe〈β-CD〈FeSO4〉〉10 0.060 0.084 22000 1.3 0.049 9700 0.5
Yb2O3 [23] 0.09 – – – 0.12 7.4 2.5–3
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 3. P. 375-381.
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
379
Fig. 5. Equivalent circuit structure.
Let us have charges +Q and –Q on the metallic
electrodes. Then, 2DEG-electrode and imaginary
electrode will have charges –q and +q, accordingly. The
magnitude of q depends on the magnitude Q,
specifications of the triangle-like potential well and
process of tunnelling etc.
If we choose the parameters of our electrical circuit
as shown in Fig. 6, we will have the following
expression for the capacitance of our system
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
2
2
2
1
12
2
1
0
ε
+
ε
2
ε2
+
ε
+
ε2
1
ε
ddD
Q
qdD
S=C
Let us accept that
221
ddd == for simplifying our
further consideration.
Then,
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
2121
0
2εε2Q2εε2
1
ε
dDq
+d+D
S
=C , and
we have three qualitatively different cases:
1. q = 0. It means the absence of the 2DEG-
electrode. This situation corresponds to the common
capacitor with two dielectric layers (D, ε1) and (2d, ε2).
( )
21
0
0
2εε
ε2
dD
S=C =q
−
.
2. q = Q. This situation is realized when we have
ideal connection between metallic electrode and 2DEG-
electrode.
( ) D
εS
=C Q=q
10ε2
.
3. q = κQ, where κ is a positive number. Let us
take κ = 2 for example. Then,
( )
21
0
2Q
2εε
3
ε2
dD
S=C =q
−
.
In this case, the capacitance of this capacitor
becomes larger than the capacitance of a capacitor with
the distance between electrodes equal to D. For some κ
values, the capacitance can →∞ and even becomes
negative, because we have no restrictions on this κ
value. For receiving these restrictions, we should
consider a microscopic model of the investigated system.
It is important that the proposed model can explain the
large magnitude of the capacitance. It is clear that the
large magnitude of the capacitance can be related with
the large magnitude of effective dielectric susceptibility
of the system.
Fig. 6. Parameters of the electric field structure.
Fig. 7. CVC perpendicular to the layers of GaSe〈β-
CD〈FeSO4〉〉Q in the magnetic field for Q = 3 (1), 7 (2) and Q =
10 (3) mass.%.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 3. P. 375-381.
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
380
The structure GaSe〈β-CD〈FeSO4〉〉Q = 7 is interesting
for creating quantum batteries, and, at the same time,
clathrate GaSe〈β-СD〈FeSO4〉〉Q = 10 promises application
in other new direction of the energy storage on the
quantum level, the newest alternative to the
electrochemical one. In this case, the CVC (Fig. 5)
points to observation of the “spin-battery” effect, which
value is ~2.6 V at room temperature and the magnetic
field close to 2.75 kOe. It is two orders higher than that
observed in [24], but at the temperature 3 K and
magnetic field 10 kOe. In other words, the hierarchical
architecture of 10 mass.% – cavitate loading on the
submatrix GaSe is promising for practical
implementation of the idea [24] to create a spin
capacitor.
It is obvious that the further deepening both
experimental and theoretical researches are required to
definitly ascertain the nature of the observed
phenomena. And these researches are very valuable, as
the importance of the proposed approaches to the
technology of supersensitive capacitive type sensors of a
magnetic field and a field of a light wave at room
temperature for developing new approaches to the
quantum energy storage is indisputable.
4. Conclusions
1. The doped energy spectrum change is prevailing
versus the charge carriers mobility changes
perpendicularly to nanolayers with increasing the
amount (Q) of guest cavitate β-СD〈FeSO4〉 in the
expanded van der Waals GaSe regions.
2. The constant magnetic field applied along the
normal to clathrate nanolayers GaSe〈β-СD〈FeSO4〉〉Q
causes a giant magnitoresistance effect, which
magnitude and nature depend on Q. However, its
photoresistant sensitivity increases with increasing Q.
3. For the guest loading level Q = 7 mass.%, the
low-frequency region of imaginary impedance
component is in IV inductive quadrant of the complex
plane, indicating the possibility of applying the
synthesized clathrate in nanoelectronics for creating non-
gyrator nanolines delay.
4. In the low-frequency magnetic field, the
inductive response is also observed only for Q =
7 mass.%, and on the Nyquist chart it looks like
bifurcation on the frequency parameter Im Z(ω) in the
vicinity of the frequencies 0.2 < ω < 0.01 Hz.
5. Variation of the cavitate content β-СD〈FeSO4〉
does not cause significant changes in ε(ω) along the
normal to nanolayers in the frequency range
102…106 Hz. An exception is the guest loading degree
Q = 3 mass.%, when significant reduction of ε at
frequencies up to 104 Hz is observable.
6. The magnetic field application along the
perpendicular to the nanolayers causes the
magnitocapacitance effect that substantially depends on
Q (Fig. 4). A similar situation is realized at the
illumination.
7. The huge positive magnetoresistant effect is
realized in the magnetic field 2.75 kOe at room
temperature. The coefficient of this effect
ε(0)
ε(0))ε(= −
℘
H , where ε(H) and ε(0) are the dielectric
susceptibility in a magnetic field and without it,
accordingly, is the highest at Q = 3 mass.% and equals to
53200%. It opens the perspective to replace the
traditional inductive heads used for reading information
from magnetic carriers with the capacitive
magnetoelectrical elements, which can reduce the size
and the dispersion of energy in them.
8. The synthesized clathrates are promising
(especially with the co-intercalation architecture) for
new approaches in technology of supersensitive
capacitive type sensors of magnetic field and field of
light waves at room temperature as well as for creating
quantum batteries and spin capacitors, which are the
modern alternative to the electrical current chemical
sources.
Acknowledgements
This work was partly supported by project
№0115U000438 funded by state budget of Ukraine and
executed within department theme
№0114U001695.temperature range 100…150 K.
The main goal of this work is to obtain TSC spectra
for heterostructures InGaAs-GaAs and to interprete
them. To reach the goal, the classic method for obtaining
TSС spectra and periodic light excitation method during
the heating from 83 to 276 K weare used in this paper.
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| id | nasplib_isofts_kiev_ua-123456789-214942 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T14:44:39Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Ivashchyshyn, F.O. Grygorchak, I.I. Hryhorchak, O.I. 2026-03-05T12:00:21Z 2017 The influence of the guest cavitation loading degree in fractal nanohybrids GaSe〈β-cyclodextrin〈FeSO₄〉〉 on the current passing and polarization processes. The giant “battery spin” effect at room temperature. / F.O. Ivashchyshyn, I.I. Grygorchak, O.I. Hryhorchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 375-381. — Бібліогр.: 25 назв. — англ. 1560-8034 PACS: 73.61.Ey, 77.22.Gm, 82.75.-z, 84.37.+q https://nasplib.isofts.kiev.ua/handle/123456789/214942 https://doi.org/10.15407/spqeo20.03.375 The investigation results of clathrate properties GaSe〈β-cyclodextrin〈FeSO₄〉〉 of the hierarchical architecture with the fourfold expansion at different degrees of a guest cavitation loading have been presented. Based on the frequency dependence of the specific complex impedance, the changes of the impurity energy spectrum expanded matrix parameters as a result of forming the supramolecular ensembles on its basis are clarified. For some architectures, impedance, photo, and magneto responses showed the extraordinary behavior of the magnetoimpedance and photoconductivity, and also the giant negative photodielectric and the colossal magnetocapacitance effects at room temperature, which open new possibilities for their practical application. This work was partly supported by project № 0115U000438 funded by the state budget of Ukraine and executed within department theme № 0114U001695, temperature range 100…150 K. The main goal of this work is to obtain TSC spectra for heterostructures InGaAs-GaAs and to interpret them. To reach the goal, the classic method for obtaining TSС spectra and the periodic light excitation method during the heating from 83 to 276 K were used in this paper. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The influence of the guest cavitation loading degree in fractal nanohybrids GaSe〈β-cyclodextrin〈FeSO₄〉〉 on the current passing and polarization processes. The giant “battery spin” effect at room temperature Article published earlier |
| spellingShingle | The influence of the guest cavitation loading degree in fractal nanohybrids GaSe〈β-cyclodextrin〈FeSO₄〉〉 on the current passing and polarization processes. The giant “battery spin” effect at room temperature Ivashchyshyn, F.O. Grygorchak, I.I. Hryhorchak, O.I. |
| title | The influence of the guest cavitation loading degree in fractal nanohybrids GaSe〈β-cyclodextrin〈FeSO₄〉〉 on the current passing and polarization processes. The giant “battery spin” effect at room temperature |
| title_full | The influence of the guest cavitation loading degree in fractal nanohybrids GaSe〈β-cyclodextrin〈FeSO₄〉〉 on the current passing and polarization processes. The giant “battery spin” effect at room temperature |
| title_fullStr | The influence of the guest cavitation loading degree in fractal nanohybrids GaSe〈β-cyclodextrin〈FeSO₄〉〉 on the current passing and polarization processes. The giant “battery spin” effect at room temperature |
| title_full_unstemmed | The influence of the guest cavitation loading degree in fractal nanohybrids GaSe〈β-cyclodextrin〈FeSO₄〉〉 on the current passing and polarization processes. The giant “battery spin” effect at room temperature |
| title_short | The influence of the guest cavitation loading degree in fractal nanohybrids GaSe〈β-cyclodextrin〈FeSO₄〉〉 on the current passing and polarization processes. The giant “battery spin” effect at room temperature |
| title_sort | influence of the guest cavitation loading degree in fractal nanohybrids gase〈β-cyclodextrin〈feso₄〉〉 on the current passing and polarization processes. the giant “battery spin” effect at room temperature |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214942 |
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